CH614837B - Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration. - Google Patents
Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.Info
- Publication number
- CH614837B CH614837B CH845477A CH845477A CH614837B CH 614837 B CH614837 B CH 614837B CH 845477 A CH845477 A CH 845477A CH 845477 A CH845477 A CH 845477A CH 614837 B CH614837 B CH 614837B
- Authority
- CH
- Switzerland
- Prior art keywords
- current generator
- regulating transistor
- igfet
- integrated circuit
- threshold voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Channel Selection Circuits, Automatic Tuning Circuits (AREA)
- Circuits Of Receivers In General (AREA)
- Control Of Electrical Variables (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electromechanical Clocks (AREA)
- Electric Clocks (AREA)
- Manipulation Of Pulses (AREA)
- Logic Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH845477A CH614837B (fr) | 1977-07-08 | 1977-07-08 | Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration. |
DE19782829947 DE2829947A1 (de) | 1977-07-08 | 1978-07-05 | Vorrichtung zum einstellen der schwellenspannung eines igfet-transistors durch polarisation des integrationssubstrats |
GB787829491A GB2001492B (en) | 1977-07-08 | 1978-07-06 | Apparatus for receiving signals in plural frequency bands |
JP8214678A JPS5418688A (en) | 1977-07-08 | 1978-07-07 | Device for controlling ic insulated gate fet limiting voltage to predetermined value |
US06/050,879 US4311923A (en) | 1977-07-08 | 1979-06-21 | Device for regulating the threshold voltages of I.G.F.E.T. transistors circuitry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH845477A CH614837B (fr) | 1977-07-08 | 1977-07-08 | Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration. |
Publications (2)
Publication Number | Publication Date |
---|---|
CH614837B true CH614837B (fr) | |
CH614837GA3 CH614837GA3 (fr) | 1979-12-28 |
Family
ID=4340620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH845477A CH614837B (fr) | 1977-07-08 | 1977-07-08 | Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4311923A (fr) |
JP (1) | JPS5418688A (fr) |
CH (1) | CH614837B (fr) |
DE (1) | DE2829947A1 (fr) |
GB (1) | GB2001492B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
US4401897A (en) * | 1981-03-17 | 1983-08-30 | Motorola, Inc. | Substrate bias voltage regulator |
US4403158A (en) * | 1981-05-15 | 1983-09-06 | Inmos Corporation | Two-way regulated substrate bias generator |
US4593279A (en) * | 1981-12-24 | 1986-06-03 | Texas Instruments Incorporated | Low power liquid crystal display driver circuit |
US4553132A (en) * | 1983-01-24 | 1985-11-12 | Rca Corporation | Apparatus for matching FET switches as for a video digital-to-analog converter |
JPH0383371A (ja) * | 1989-08-28 | 1991-04-09 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置の昇圧回路 |
US5059815A (en) * | 1990-04-05 | 1991-10-22 | Advanced Micro Devices, Inc. | High voltage charge pumps with series capacitors |
JP3162564B2 (ja) * | 1993-08-17 | 2001-05-08 | 株式会社東芝 | 昇圧回路及び昇圧回路を備えた不揮発性半導体記憶装置 |
JPH07322606A (ja) * | 1994-05-27 | 1995-12-08 | Sony Corp | 昇圧回路及びこれを用いた固体撮像装置 |
US10348192B1 (en) * | 2017-12-20 | 2019-07-09 | Micron Technology, Inc. | Electronic device with a charge recycling mechanism |
US10211724B1 (en) | 2017-12-20 | 2019-02-19 | Micron Technology, Inc. | Electronic device with an output voltage booster mechanism |
US10312803B1 (en) | 2017-12-20 | 2019-06-04 | Micron Technology, Inc. | Electronic device with a charging mechanism |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609414A (en) * | 1968-08-20 | 1971-09-28 | Ibm | Apparatus for stabilizing field effect transistor thresholds |
NL7103303A (fr) * | 1970-03-13 | 1971-09-15 | ||
US3794862A (en) * | 1972-04-05 | 1974-02-26 | Rockwell International Corp | Substrate bias circuit |
US3806741A (en) * | 1972-05-17 | 1974-04-23 | Standard Microsyst Smc | Self-biasing technique for mos substrate voltage |
CH553481A (fr) * | 1972-06-27 | 1974-08-30 | Battelle Memorial Institute | Ensemble pour polariser le substrat d'un circuit integre. |
US4016476A (en) * | 1972-09-20 | 1977-04-05 | Citizen Watch Co., Ltd. | Booster circuits |
US3805095A (en) * | 1972-12-29 | 1974-04-16 | Ibm | Fet threshold compensating bias circuit |
CH450474A4 (fr) * | 1974-04-01 | 1976-02-27 | ||
US4049980A (en) * | 1976-04-26 | 1977-09-20 | Hewlett-Packard Company | IGFET threshold voltage compensator |
US4115710A (en) * | 1976-12-27 | 1978-09-19 | Texas Instruments Incorporated | Substrate bias for MOS integrated circuit |
US4142114A (en) * | 1977-07-18 | 1979-02-27 | Mostek Corporation | Integrated circuit with threshold regulation |
-
1977
- 1977-07-08 CH CH845477A patent/CH614837B/fr unknown
-
1978
- 1978-07-05 DE DE19782829947 patent/DE2829947A1/de not_active Withdrawn
- 1978-07-06 GB GB787829491A patent/GB2001492B/en not_active Expired
- 1978-07-07 JP JP8214678A patent/JPS5418688A/ja active Pending
-
1979
- 1979-06-21 US US06/050,879 patent/US4311923A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4311923A (en) | 1982-01-19 |
JPS5418688A (en) | 1979-02-10 |
GB2001492A (en) | 1979-01-31 |
CH614837GA3 (fr) | 1979-12-28 |
GB2001492B (en) | 1982-02-10 |
DE2829947A1 (de) | 1979-01-25 |
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