DE69507284D1 - Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind - Google Patents
Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sindInfo
- Publication number
- DE69507284D1 DE69507284D1 DE69507284T DE69507284T DE69507284D1 DE 69507284 D1 DE69507284 D1 DE 69507284D1 DE 69507284 T DE69507284 T DE 69507284T DE 69507284 T DE69507284 T DE 69507284T DE 69507284 D1 DE69507284 D1 DE 69507284D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- semiconductors
- fastened
- carrier
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2924/00013—Fully indexed content
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94203386 | 1994-11-22 | ||
PCT/IB1995/000879 WO1996016443A1 (en) | 1994-11-22 | 1995-10-16 | Semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a glue layer and on which a pattern of conductor tracks is fastened |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69507284D1 true DE69507284D1 (de) | 1999-02-25 |
DE69507284T2 DE69507284T2 (de) | 1999-07-01 |
Family
ID=8217398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69507284T Expired - Lifetime DE69507284T2 (de) | 1994-11-22 | 1995-10-16 | Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind |
Country Status (6)
Country | Link |
---|---|
US (1) | US5739591A (de) |
EP (1) | EP0740853B1 (de) |
JP (1) | JP4319251B2 (de) |
KR (1) | KR100389754B1 (de) |
DE (1) | DE69507284T2 (de) |
WO (1) | WO1996016443A1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69707077T2 (de) * | 1996-03-12 | 2002-06-06 | Koninkl Philips Electronics Nv | Halbleiterkörper mit einem substrat auf einen trägerkörper geklebt |
JPH11261010A (ja) * | 1998-03-13 | 1999-09-24 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2002543591A (ja) | 1999-04-23 | 2002-12-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 本体がソフトフェライト材料を有する動作周波数が50MHzより高い半導体装置 |
EP1118118A1 (de) * | 1999-06-29 | 2001-07-25 | Koninklijke Philips Electronics N.V. | Halbleiter gegenstand |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
WO2003019653A2 (de) | 2001-08-24 | 2003-03-06 | Schott Glas | Verfahren zum kontaktieren und gehäusen von integrierten schaltungen |
JP2005503671A (ja) * | 2001-09-18 | 2005-02-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | X線を用いて半導体材料のウェハを検査する方法 |
DE10356885B4 (de) | 2003-12-03 | 2005-11-03 | Schott Ag | Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement |
ATE550019T1 (de) | 2005-05-17 | 2012-04-15 | Merck Sharp & Dohme | Cis-4-ä(4-chlorophenyl)sulfonylü-4-(2,5- difluorophenyl)cyclohexanepropansäure zur behandlug von krebs |
GB0603041D0 (en) | 2006-02-15 | 2006-03-29 | Angeletti P Ist Richerche Bio | Therapeutic compounds |
EP2010528B1 (de) | 2006-04-19 | 2017-10-04 | Novartis AG | 6-o-substituierte benzoxazol- und benzothiazolverbindungen und verfahren zur hemmung von csf-1r-signalisierung |
US8173629B2 (en) | 2006-09-22 | 2012-05-08 | Merck Sharp & Dohme Corp. | Method of treatment using fatty acid synthesis inhibitors |
RS58936B1 (sr) | 2007-01-10 | 2019-08-30 | Msd Italia Srl | Indazoli supstituisani amidom kao inhibitori poli(adp-riboza)polimeraze (parp) |
CA2679659C (en) | 2007-03-01 | 2016-01-19 | Novartis Ag | Pim kinase inhibitors and methods of their use |
EP2152700B1 (de) | 2007-05-21 | 2013-12-11 | Novartis AG | Csf-1r-hemmer, zusammensetzungen und anwendungsverfahren |
US8389553B2 (en) | 2007-06-27 | 2013-03-05 | Merck Sharp & Dohme Corp. | 4-carboxybenzylamino derivatives as histone deacetylase inhibitors |
US8691825B2 (en) | 2009-04-01 | 2014-04-08 | Merck Sharp & Dohme Corp. | Inhibitors of AKT activity |
CN102480966B (zh) | 2009-06-12 | 2015-09-16 | 达娜-法勃肿瘤研究所公司 | 融合的杂环化合物及其用途 |
US9072464B2 (en) * | 2009-07-22 | 2015-07-07 | Koninklijke Philips N.V. | Thermal flow sensor integrated circuit with low response time and high sensitivity |
CN104945382B (zh) | 2009-10-14 | 2020-02-07 | 默沙东公司 | 提高p53活性的取代的哌啶和其用途 |
KR20130006664A (ko) | 2010-03-16 | 2013-01-17 | 다나-파버 캔서 인스티튜트 인크. | 인다졸 화합물 및 그의 용도 |
WO2011163330A1 (en) | 2010-06-24 | 2011-12-29 | Merck Sharp & Dohme Corp. | Novel heterocyclic compounds as erk inhibitors |
WO2012018754A2 (en) | 2010-08-02 | 2012-02-09 | Merck Sharp & Dohme Corp. | RNA INTERFERENCE MEDIATED INHIBITION OF CATENIN (CADHERIN-ASSOCIATED PROTEIN), BETA 1 (CTNNB1) GENE EXPRESSION USING SHORT INTERFERING NUCLEIC ACID (siNA) |
US9029341B2 (en) | 2010-08-17 | 2015-05-12 | Sirna Therapeutics, Inc. | RNA interference mediated inhibition of hepatitis B virus (HBV) gene expression using short interfering nucleic acid (siNA) |
EP2608669B1 (de) | 2010-08-23 | 2016-06-22 | Merck Sharp & Dohme Corp. | Neue pyrazolo-[1,5-a-]pyrimidinderivate als mtor-hemmer |
EP2613782B1 (de) | 2010-09-01 | 2016-11-02 | Merck Sharp & Dohme Corp. | Indazolderivate als erk-hemmer |
US9242981B2 (en) | 2010-09-16 | 2016-01-26 | Merck Sharp & Dohme Corp. | Fused pyrazole derivatives as novel ERK inhibitors |
US9260471B2 (en) | 2010-10-29 | 2016-02-16 | Sirna Therapeutics, Inc. | RNA interference mediated inhibition of gene expression using short interfering nucleic acids (siNA) |
WO2012087772A1 (en) | 2010-12-21 | 2012-06-28 | Schering Corporation | Indazole derivatives useful as erk inhibitors |
US20140045847A1 (en) | 2011-04-21 | 2014-02-13 | Piramal Enterprises Limited | Crystalline form of a salt of a morpholino sulfonyl indole derivative and a process for its preparation |
EP2770987B1 (de) | 2011-10-27 | 2018-04-04 | Merck Sharp & Dohme Corp. | Neue verbindungen als erk-hemmer |
EP3453762B1 (de) | 2012-05-02 | 2021-04-21 | Sirna Therapeutics, Inc. | Sina-zusammensetzungen |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
JPH01215033A (ja) * | 1988-02-24 | 1989-08-29 | Fuji Electric Co Ltd | 半導体チップ用ボンディングパッド |
JP3077034B2 (ja) * | 1990-07-25 | 2000-08-14 | セイコーインスツルメンツ株式会社 | 半導体イメージセンサ装置 |
KR930006732B1 (ko) * | 1991-05-08 | 1993-07-23 | 재단법인 한국전자통신연구소 | 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법 |
US5273921A (en) * | 1991-12-27 | 1993-12-28 | Purdue Research Foundation | Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
US5213990A (en) * | 1992-04-01 | 1993-05-25 | Texas Instruments, Incorporated | Method for forming a stacked semiconductor structure |
-
1995
- 1995-10-16 DE DE69507284T patent/DE69507284T2/de not_active Expired - Lifetime
- 1995-10-16 JP JP51669796A patent/JP4319251B2/ja not_active Expired - Lifetime
- 1995-10-16 EP EP95932885A patent/EP0740853B1/de not_active Expired - Lifetime
- 1995-10-16 KR KR1019960703919A patent/KR100389754B1/ko not_active IP Right Cessation
- 1995-10-16 WO PCT/IB1995/000879 patent/WO1996016443A1/en active IP Right Grant
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1997
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KR970700942A (ko) | 1997-02-12 |
JPH09508502A (ja) | 1997-08-26 |
KR100389754B1 (ko) | 2003-10-17 |
DE69507284T2 (de) | 1999-07-01 |
EP0740853A1 (de) | 1996-11-06 |
WO1996016443A1 (en) | 1996-05-30 |
JP4319251B2 (ja) | 2009-08-26 |
EP0740853B1 (de) | 1999-01-13 |
US5739591A (en) | 1998-04-14 |
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