DE69223478D1 - Photovoltaische Vorrichtung - Google Patents
Photovoltaische VorrichtungInfo
- Publication number
- DE69223478D1 DE69223478D1 DE69223478T DE69223478T DE69223478D1 DE 69223478 D1 DE69223478 D1 DE 69223478D1 DE 69223478 T DE69223478 T DE 69223478T DE 69223478 T DE69223478 T DE 69223478T DE 69223478 D1 DE69223478 D1 DE 69223478D1
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3245803A JP2984430B2 (ja) | 1991-09-25 | 1991-09-25 | 光起電力素子 |
JP3351521A JP2785884B2 (ja) | 1991-12-12 | 1991-12-12 | 光起電力素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69223478D1 true DE69223478D1 (de) | 1998-01-22 |
DE69223478T2 DE69223478T2 (de) | 1998-04-23 |
Family
ID=26537412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69223478T Expired - Fee Related DE69223478T2 (de) | 1991-09-25 | 1992-09-24 | Photovoltaische Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5342452A (de) |
EP (1) | EP0534425B1 (de) |
AU (1) | AU646761B2 (de) |
DE (1) | DE69223478T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3029178B2 (ja) * | 1994-04-27 | 2000-04-04 | キヤノン株式会社 | 薄膜半導体太陽電池の製造方法 |
DE69535967D1 (de) * | 1994-10-06 | 2009-07-30 | Kanegafuchi Chemical Ind | Dünnschicht-solarzelle |
JP2778494B2 (ja) * | 1994-12-26 | 1998-07-23 | 日本電気株式会社 | 電極薄膜およびその電極薄膜を用いた磁気抵抗効果型ヘッド |
EP2251913A3 (de) * | 1997-11-10 | 2012-02-22 | Kaneka Corporation | Herstellungsverfahren eines Dünnschicht photoelektrischen Umwandlers aus Silizium und für dieses Verfahren angewendeter Plasma-CVD Apparat |
TW457736B (en) | 1998-09-17 | 2001-10-01 | Ibm | Self assembled nano-devices using DNA |
US6548843B2 (en) | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
JP3589581B2 (ja) * | 1999-02-26 | 2004-11-17 | 株式会社カネカ | タンデム型の薄膜光電変換装置の製造方法 |
US6200825B1 (en) * | 1999-02-26 | 2001-03-13 | Kaneka Corporation | Method of manufacturing silicon based thin film photoelectric conversion device |
JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
US20060019502A1 (en) * | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
US20090255759A1 (en) * | 2008-04-10 | 2009-10-15 | Barnes Gregory K | Ladder stabilizing and standoff system |
US7988875B2 (en) * | 2007-02-08 | 2011-08-02 | Applied Materials, Inc. | Differential etch rate control of layers deposited by chemical vapor deposition |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US8076175B2 (en) | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US9202959B2 (en) * | 2012-09-25 | 2015-12-01 | International Business Machines Corporation | Embedded junction in hetero-structured back-surface field for photovoltaic devices |
KR20150014312A (ko) * | 2013-07-29 | 2015-02-06 | 삼성디스플레이 주식회사 | 스퍼터링 타겟의 제조 방법, 그 방법으로 제조된 스퍼터링 타겟 및 그 스퍼터링 타겟을 이용하여 유기 발광 표시 장치를 제조하는 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134396A (en) * | 1978-04-08 | 1979-10-18 | Agency Of Ind Science & Technol | Transparent conductive film and its manufacturing process |
JPS6089573A (ja) * | 1983-10-20 | 1985-05-20 | Ricoh Co Ltd | 透明導電膜 |
JPS60142575A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 光起電力素子 |
JPH06101573B2 (ja) * | 1984-04-13 | 1994-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPS61139074A (ja) * | 1984-12-10 | 1986-06-26 | Sanyo Electric Co Ltd | 光起電力素子 |
JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
JPS62287513A (ja) * | 1986-06-04 | 1987-12-14 | 株式会社リコー | 透明導電膜およびその製造方法 |
JPS6433974A (en) * | 1987-07-29 | 1989-02-03 | Fujitsu Ltd | Amorphous silicon photodiode and its manufacture |
US5085711A (en) * | 1989-02-20 | 1992-02-04 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2752129B2 (ja) * | 1989-02-20 | 1998-05-18 | 三洋電機株式会社 | 半導体装置 |
JP2752128B2 (ja) * | 1989-02-20 | 1998-05-18 | 三洋電機株式会社 | 光起電力装置 |
JP2755707B2 (ja) * | 1989-08-09 | 1998-05-25 | 三洋電機株式会社 | 光起電力装置の製造方法 |
JP2788798B2 (ja) * | 1991-06-28 | 1998-08-20 | キヤノン株式会社 | 光起電力素子 |
AU650782B2 (en) * | 1991-09-24 | 1994-06-30 | Canon Kabushiki Kaisha | Solar cell |
JP2994812B2 (ja) * | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | 太陽電池 |
-
1992
- 1992-09-23 US US07/949,692 patent/US5342452A/en not_active Expired - Fee Related
- 1992-09-24 DE DE69223478T patent/DE69223478T2/de not_active Expired - Fee Related
- 1992-09-24 EP EP92116353A patent/EP0534425B1/de not_active Expired - Lifetime
- 1992-09-25 AU AU25367/92A patent/AU646761B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EP0534425A2 (de) | 1993-03-31 |
AU646761B2 (en) | 1994-03-03 |
EP0534425A3 (en) | 1993-12-29 |
EP0534425B1 (de) | 1997-12-10 |
DE69223478T2 (de) | 1998-04-23 |
US5342452A (en) | 1994-08-30 |
AU2536792A (en) | 1993-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |