DE69223478D1 - Photovoltaische Vorrichtung - Google Patents

Photovoltaische Vorrichtung

Info

Publication number
DE69223478D1
DE69223478D1 DE69223478T DE69223478T DE69223478D1 DE 69223478 D1 DE69223478 D1 DE 69223478D1 DE 69223478 T DE69223478 T DE 69223478T DE 69223478 T DE69223478 T DE 69223478T DE 69223478 D1 DE69223478 D1 DE 69223478D1
Authority
DE
Germany
Prior art keywords
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223478T
Other languages
English (en)
Other versions
DE69223478T2 (de
Inventor
Keishi Saito
Tatsuyuki Aoike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3245803A external-priority patent/JP2984430B2/ja
Priority claimed from JP3351521A external-priority patent/JP2785884B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69223478D1 publication Critical patent/DE69223478D1/de
Application granted granted Critical
Publication of DE69223478T2 publication Critical patent/DE69223478T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE69223478T 1991-09-25 1992-09-24 Photovoltaische Vorrichtung Expired - Fee Related DE69223478T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3245803A JP2984430B2 (ja) 1991-09-25 1991-09-25 光起電力素子
JP3351521A JP2785884B2 (ja) 1991-12-12 1991-12-12 光起電力素子

Publications (2)

Publication Number Publication Date
DE69223478D1 true DE69223478D1 (de) 1998-01-22
DE69223478T2 DE69223478T2 (de) 1998-04-23

Family

ID=26537412

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223478T Expired - Fee Related DE69223478T2 (de) 1991-09-25 1992-09-24 Photovoltaische Vorrichtung

Country Status (4)

Country Link
US (1) US5342452A (de)
EP (1) EP0534425B1 (de)
AU (1) AU646761B2 (de)
DE (1) DE69223478T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3029178B2 (ja) * 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
DE69535967D1 (de) * 1994-10-06 2009-07-30 Kanegafuchi Chemical Ind Dünnschicht-solarzelle
JP2778494B2 (ja) * 1994-12-26 1998-07-23 日本電気株式会社 電極薄膜およびその電極薄膜を用いた磁気抵抗効果型ヘッド
EP2251913A3 (de) * 1997-11-10 2012-02-22 Kaneka Corporation Herstellungsverfahren eines Dünnschicht photoelektrischen Umwandlers aus Silizium und für dieses Verfahren angewendeter Plasma-CVD Apparat
TW457736B (en) 1998-09-17 2001-10-01 Ibm Self assembled nano-devices using DNA
US6548843B2 (en) 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
JP3589581B2 (ja) * 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
US6200825B1 (en) * 1999-02-26 2001-03-13 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
JP4341124B2 (ja) * 1999-11-25 2009-10-07 ソニー株式会社 半導体装置の製造方法
US20060019502A1 (en) * 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US20090255759A1 (en) * 2008-04-10 2009-10-15 Barnes Gregory K Ladder stabilizing and standoff system
US7988875B2 (en) * 2007-02-08 2011-08-02 Applied Materials, Inc. Differential etch rate control of layers deposited by chemical vapor deposition
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US9202959B2 (en) * 2012-09-25 2015-12-01 International Business Machines Corporation Embedded junction in hetero-structured back-surface field for photovoltaic devices
KR20150014312A (ko) * 2013-07-29 2015-02-06 삼성디스플레이 주식회사 스퍼터링 타겟의 제조 방법, 그 방법으로 제조된 스퍼터링 타겟 및 그 스퍼터링 타겟을 이용하여 유기 발광 표시 장치를 제조하는 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134396A (en) * 1978-04-08 1979-10-18 Agency Of Ind Science & Technol Transparent conductive film and its manufacturing process
JPS6089573A (ja) * 1983-10-20 1985-05-20 Ricoh Co Ltd 透明導電膜
JPS60142575A (ja) * 1983-12-28 1985-07-27 Matsushita Electric Ind Co Ltd 光起電力素子
JPH06101573B2 (ja) * 1984-04-13 1994-12-12 株式会社半導体エネルギー研究所 半導体装置
JPS61139074A (ja) * 1984-12-10 1986-06-26 Sanyo Electric Co Ltd 光起電力素子
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
JPS62287513A (ja) * 1986-06-04 1987-12-14 株式会社リコー 透明導電膜およびその製造方法
JPS6433974A (en) * 1987-07-29 1989-02-03 Fujitsu Ltd Amorphous silicon photodiode and its manufacture
US5085711A (en) * 1989-02-20 1992-02-04 Sanyo Electric Co., Ltd. Photovoltaic device
JP2752129B2 (ja) * 1989-02-20 1998-05-18 三洋電機株式会社 半導体装置
JP2752128B2 (ja) * 1989-02-20 1998-05-18 三洋電機株式会社 光起電力装置
JP2755707B2 (ja) * 1989-08-09 1998-05-25 三洋電機株式会社 光起電力装置の製造方法
JP2788798B2 (ja) * 1991-06-28 1998-08-20 キヤノン株式会社 光起電力素子
AU650782B2 (en) * 1991-09-24 1994-06-30 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池

Also Published As

Publication number Publication date
EP0534425A2 (de) 1993-03-31
AU646761B2 (en) 1994-03-03
EP0534425A3 (en) 1993-12-29
EP0534425B1 (de) 1997-12-10
DE69223478T2 (de) 1998-04-23
US5342452A (en) 1994-08-30
AU2536792A (en) 1993-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee