DE69127040D1 - Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen - Google Patents
Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen SchwellenspannungenInfo
- Publication number
- DE69127040D1 DE69127040D1 DE69127040T DE69127040T DE69127040D1 DE 69127040 D1 DE69127040 D1 DE 69127040D1 DE 69127040 T DE69127040 T DE 69127040T DE 69127040 T DE69127040 T DE 69127040T DE 69127040 D1 DE69127040 D1 DE 69127040D1
- Authority
- DE
- Germany
- Prior art keywords
- channel mos
- mos transistors
- threshold voltages
- semiconductor circuit
- integrated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2252525A JP2839203B2 (ja) | 1990-09-20 | 1990-09-20 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127040D1 true DE69127040D1 (de) | 1997-09-04 |
DE69127040T2 DE69127040T2 (de) | 1998-01-22 |
Family
ID=17238584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127040T Expired - Fee Related DE69127040T2 (de) | 1990-09-20 | 1991-09-18 | Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0477758B1 (de) |
JP (1) | JP2839203B2 (de) |
KR (1) | KR950002275B1 (de) |
DE (1) | DE69127040T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3566608B2 (ja) * | 1999-12-28 | 2004-09-15 | Necエレクトロニクス株式会社 | 半導体集積回路 |
KR100862832B1 (ko) * | 2002-08-28 | 2008-10-13 | 주식회사 포스코 | 고로의 미분탄 취입 랜스의 취외 및 교정 장치 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5822423A (ja) * | 1981-07-31 | 1983-02-09 | Hitachi Ltd | 基準電圧発生回路 |
JPS59112640A (ja) * | 1982-12-18 | 1984-06-29 | Toshiba Corp | 半導体集積回路 |
-
1990
- 1990-09-20 JP JP2252525A patent/JP2839203B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-18 DE DE69127040T patent/DE69127040T2/de not_active Expired - Fee Related
- 1991-09-18 EP EP91115846A patent/EP0477758B1/de not_active Expired - Lifetime
- 1991-09-19 KR KR1019910016330A patent/KR950002275B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0477758A2 (de) | 1992-04-01 |
DE69127040T2 (de) | 1998-01-22 |
EP0477758A3 (en) | 1992-06-03 |
JP2839203B2 (ja) | 1998-12-16 |
EP0477758B1 (de) | 1997-07-30 |
KR920007176A (ko) | 1992-04-28 |
KR950002275B1 (ko) | 1995-03-15 |
JPH04129419A (ja) | 1992-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |