EP0477758A3 - Semiconductor integrated circuit including p-channel mos transistors having different threshold voltages - Google Patents

Semiconductor integrated circuit including p-channel mos transistors having different threshold voltages Download PDF

Info

Publication number
EP0477758A3
EP0477758A3 EP19910115846 EP91115846A EP0477758A3 EP 0477758 A3 EP0477758 A3 EP 0477758A3 EP 19910115846 EP19910115846 EP 19910115846 EP 91115846 A EP91115846 A EP 91115846A EP 0477758 A3 EP0477758 A3 EP 0477758A3
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
semiconductor integrated
channel mos
circuit including
mos transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19910115846
Other versions
EP0477758A2 (en
EP0477758B1 (en
Inventor
Yoshinori Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0477758A2 publication Critical patent/EP0477758A2/en
Publication of EP0477758A3 publication Critical patent/EP0477758A3/en
Application granted granted Critical
Publication of EP0477758B1 publication Critical patent/EP0477758B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
EP91115846A 1990-09-20 1991-09-18 Semiconductor integrated circuit including P-channel MOS transistors having different threshold voltages Expired - Lifetime EP0477758B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP252525/90 1990-09-20
JP2252525A JP2839203B2 (en) 1990-09-20 1990-09-20 Semiconductor integrated circuit

Publications (3)

Publication Number Publication Date
EP0477758A2 EP0477758A2 (en) 1992-04-01
EP0477758A3 true EP0477758A3 (en) 1992-06-03
EP0477758B1 EP0477758B1 (en) 1997-07-30

Family

ID=17238584

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91115846A Expired - Lifetime EP0477758B1 (en) 1990-09-20 1991-09-18 Semiconductor integrated circuit including P-channel MOS transistors having different threshold voltages

Country Status (4)

Country Link
EP (1) EP0477758B1 (en)
JP (1) JP2839203B2 (en)
KR (1) KR950002275B1 (en)
DE (1) DE69127040T2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3566608B2 (en) * 1999-12-28 2004-09-15 Ｎｅｃエレクトロニクス株式会社 Semiconductor integrated circuit
KR100862832B1 (en) * 2002-08-28 2008-10-13 주식회사 포스코 Apparatus for drawing out fine coal blowing lance and reforming deflected portion thereof in blast furnace

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2510781A1 (en) * 1981-07-31 1983-02-04 Hitachi Ltd REFERENCE VOLTAGE GENERATOR

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112640A (en) * 1982-12-18 1984-06-29 Toshiba Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2510781A1 (en) * 1981-07-31 1983-02-04 Hitachi Ltd REFERENCE VOLTAGE GENERATOR

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 231 (E-274)24 October 1984 & JP-A-59 112 640 ( TOSHIBA ) 29 June 1984 *

Also Published As

Publication number Publication date
JP2839203B2 (en) 1998-12-16
JPH04129419A (en) 1992-04-30
EP0477758A2 (en) 1992-04-01
DE69127040D1 (en) 1997-09-04
EP0477758B1 (en) 1997-07-30
KR950002275B1 (en) 1995-03-15
DE69127040T2 (en) 1998-01-22
KR920007176A (en) 1992-04-28

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