DE69124136D1 - Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben - Google Patents
Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselbenInfo
- Publication number
- DE69124136D1 DE69124136D1 DE69124136T DE69124136T DE69124136D1 DE 69124136 D1 DE69124136 D1 DE 69124136D1 DE 69124136 T DE69124136 T DE 69124136T DE 69124136 T DE69124136 T DE 69124136T DE 69124136 D1 DE69124136 D1 DE 69124136D1
- Authority
- DE
- Germany
- Prior art keywords
- deflection
- shaping
- concentration
- measuring
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2127230A JP2969788B2 (ja) | 1990-05-17 | 1990-05-17 | イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69124136D1 true DE69124136D1 (de) | 1997-02-27 |
DE69124136T2 DE69124136T2 (de) | 1997-04-24 |
Family
ID=14954949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69124136T Expired - Fee Related DE69124136T2 (de) | 1990-05-17 | 1991-05-16 | Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben |
Country Status (5)
Country | Link |
---|---|
US (1) | US5180918A (de) |
EP (1) | EP0457321B1 (de) |
JP (1) | JP2969788B2 (de) |
KR (1) | KR940009197B1 (de) |
DE (1) | DE69124136T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5319212A (en) * | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
JP3288554B2 (ja) * | 1995-05-29 | 2002-06-04 | 株式会社日立製作所 | イオン注入装置及びイオン注入方法 |
US6827824B1 (en) | 1996-04-12 | 2004-12-07 | Micron Technology, Inc. | Enhanced collimated deposition |
US5898179A (en) | 1997-09-10 | 1999-04-27 | Orion Equipment, Inc. | Method and apparatus for controlling a workpiece in a vacuum chamber |
WO1999031707A1 (en) * | 1997-12-16 | 1999-06-24 | Stephen Douglas Fuerstenau | Method and apparatus for detection of charge on ions and particles |
JP3567749B2 (ja) * | 1998-07-22 | 2004-09-22 | 日新電機株式会社 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
JP4207307B2 (ja) | 1999-04-26 | 2009-01-14 | 日新イオン機器株式会社 | チャージアップ測定装置 |
US6791094B1 (en) | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
GB2355337B (en) * | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter and beam stop therefor |
US6323497B1 (en) * | 2000-06-02 | 2001-11-27 | Varian Semiconductor Equipment Assoc. | Method and apparatus for controlling ion implantation during vacuum fluctuation |
US6437350B1 (en) * | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
US6573518B1 (en) | 2000-10-30 | 2003-06-03 | Varian Semiconductor Equipment Associates, Inc. | Bi mode ion implantation with non-parallel ion beams |
WO2002058103A2 (en) | 2001-01-17 | 2002-07-25 | Varian Semiconductor Equipment Associates, Inc. | In situ ion beam incidence angle and beam divergence monitor |
US7323700B1 (en) | 2001-04-02 | 2008-01-29 | Applied Materials, Inc. | Method and system for controlling beam scanning in an ion implantation device |
ATE482227T1 (de) | 2001-05-25 | 2010-10-15 | Univ Duke | Modulatoren pharmakologischer mittel |
JP3692999B2 (ja) | 2001-10-26 | 2005-09-07 | 日新イオン機器株式会社 | イオン注入方法およびその装置 |
US6911660B2 (en) * | 2002-10-02 | 2005-06-28 | Varian Semiconductor Equipment Associates, Inc. | Method of measuring ion beam angles |
US6677598B1 (en) * | 2003-04-29 | 2004-01-13 | Axcelis Technologies, Inc. | Beam uniformity and angular distribution measurement system |
US7105839B2 (en) * | 2003-10-15 | 2006-09-12 | White Nicholas R | Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams |
JP4133883B2 (ja) | 2003-12-04 | 2008-08-13 | 日新イオン機器株式会社 | イオンビーム装置 |
JP4251453B2 (ja) | 2004-02-23 | 2009-04-08 | 日新イオン機器株式会社 | イオン注入方法 |
JP2006019048A (ja) | 2004-06-30 | 2006-01-19 | Toshiba Corp | イオン注入装置および半導体装置の製造方法 |
US6989545B1 (en) * | 2004-07-07 | 2006-01-24 | Axcelis Technologies, Inc. | Device and method for measurement of beam angle and divergence |
EP1722398B1 (de) * | 2005-05-14 | 2009-11-25 | FEI Company | Ablenksignal-Kompensation für ein Strahl von geladenen Teilchen |
JP4561690B2 (ja) * | 2005-05-24 | 2010-10-13 | 日新イオン機器株式会社 | イオンビーム計測方法およびイオン注入装置 |
US7397049B2 (en) | 2006-03-22 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Determining ion beam parallelism using refraction method |
KR100785725B1 (ko) | 2006-05-23 | 2007-12-18 | 닛신 이온기기 가부시기가이샤 | 이온 빔 계측 방법 및 이온 주입 장치 |
US7663125B2 (en) * | 2006-06-09 | 2010-02-16 | Varian Semiconductor Equipment Associates, Inc. | Ion beam current uniformity monitor, ion implanter and related method |
JP4872603B2 (ja) * | 2006-10-31 | 2012-02-08 | 日新イオン機器株式会社 | イオン注入装置 |
US7547900B2 (en) * | 2006-12-22 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a ribbon-shaped gas cluster ion beam |
JP5103968B2 (ja) * | 2007-03-20 | 2012-12-19 | 日新イオン機器株式会社 | イオンビームの進行角修正方法およびイオン注入装置 |
JP4784544B2 (ja) * | 2007-04-03 | 2011-10-05 | 日新イオン機器株式会社 | イオンビームのビーム幅、発散角の測定方法およびイオン注入装置 |
US8164068B2 (en) * | 2009-07-30 | 2012-04-24 | Varian Semiconductor Equipment Associates, Inc. | Mask health monitor using a faraday probe |
US8314409B2 (en) | 2009-08-28 | 2012-11-20 | Fei Company | Pattern modification schemes for improved FIB patterning |
JP5970394B2 (ja) * | 2013-02-27 | 2016-08-17 | 株式会社日立ハイテクノロジーズ | 検査装置 |
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021675A (en) * | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
US4011449A (en) * | 1975-11-05 | 1977-03-08 | Ibm Corporation | Apparatus for measuring the beam current of charged particle beam |
JPS56126918A (en) * | 1980-03-11 | 1981-10-05 | Hitachi Ltd | Injecting device for ion |
JPS62295347A (ja) * | 1986-04-09 | 1987-12-22 | イクリプス・イオン・テクノロジ−・インコ−ポレイテツド | イオンビ−ム高速平行走査装置 |
US4751393A (en) * | 1986-05-16 | 1988-06-14 | Varian Associates, Inc. | Dose measurement and uniformity monitoring system for ion implantation |
JPS6386340A (ja) * | 1986-09-30 | 1988-04-16 | Fujitsu Ltd | 一次粒子線照射装置 |
US4724324A (en) * | 1986-11-24 | 1988-02-09 | Varian Associates, Inc. | Method and apparatus for ion beam centroid location |
JPS63152844A (ja) * | 1986-12-16 | 1988-06-25 | Nec Corp | イオンビ−ムスキヤン制御装置 |
US4967380A (en) * | 1987-09-16 | 1990-10-30 | Varian Associates, Inc. | Dual channel signal processor using weighted integration of log-ratios and ion beam position sensor utilizing the signal processor |
US4851693A (en) * | 1988-06-03 | 1989-07-25 | Varian Associates, Inc. | Compensated scan wave form generator for ion implantation equipment |
JPH077658B2 (ja) * | 1989-05-15 | 1995-01-30 | 日新電機株式会社 | イオン注入装置 |
JPH0770296B2 (ja) * | 1989-05-15 | 1995-07-31 | 日新電機株式会社 | イオン注入装置 |
-
1990
- 1990-05-17 JP JP2127230A patent/JP2969788B2/ja not_active Expired - Fee Related
-
1991
- 1991-05-15 US US07/700,451 patent/US5180918A/en not_active Expired - Lifetime
- 1991-05-16 DE DE69124136T patent/DE69124136T2/de not_active Expired - Fee Related
- 1991-05-16 EP EP91107947A patent/EP0457321B1/de not_active Expired - Lifetime
- 1991-05-17 KR KR1019910008027A patent/KR940009197B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940009197B1 (ko) | 1994-10-01 |
EP0457321B1 (de) | 1997-01-15 |
US5180918A (en) | 1993-01-19 |
JP2969788B2 (ja) | 1999-11-02 |
KR910020793A (ko) | 1991-12-20 |
EP0457321A3 (en) | 1992-03-18 |
DE69124136T2 (de) | 1997-04-24 |
EP0457321A2 (de) | 1991-11-21 |
JPH0422900A (ja) | 1992-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NISSIN ION EQUIPMENT CO., LTD., KYOTO, JP |
|
8339 | Ceased/non-payment of the annual fee |