DE69124136D1 - Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben - Google Patents

Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben

Info

Publication number
DE69124136D1
DE69124136D1 DE69124136T DE69124136T DE69124136D1 DE 69124136 D1 DE69124136 D1 DE 69124136D1 DE 69124136 T DE69124136 T DE 69124136T DE 69124136 T DE69124136 T DE 69124136T DE 69124136 D1 DE69124136 D1 DE 69124136D1
Authority
DE
Germany
Prior art keywords
deflection
shaping
concentration
measuring
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124136T
Other languages
English (en)
Other versions
DE69124136T2 (de
Inventor
Michiro Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of DE69124136D1 publication Critical patent/DE69124136D1/de
Application granted granted Critical
Publication of DE69124136T2 publication Critical patent/DE69124136T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Measurement Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
DE69124136T 1990-05-17 1991-05-16 Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben Expired - Fee Related DE69124136T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2127230A JP2969788B2 (ja) 1990-05-17 1990-05-17 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置

Publications (2)

Publication Number Publication Date
DE69124136D1 true DE69124136D1 (de) 1997-02-27
DE69124136T2 DE69124136T2 (de) 1997-04-24

Family

ID=14954949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124136T Expired - Fee Related DE69124136T2 (de) 1990-05-17 1991-05-16 Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben

Country Status (5)

Country Link
US (1) US5180918A (de)
EP (1) EP0457321B1 (de)
JP (1) JP2969788B2 (de)
KR (1) KR940009197B1 (de)
DE (1) DE69124136T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
JP3288554B2 (ja) * 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
US5898179A (en) 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO1999031707A1 (en) * 1997-12-16 1999-06-24 Stephen Douglas Fuerstenau Method and apparatus for detection of charge on ions and particles
JP3567749B2 (ja) * 1998-07-22 2004-09-22 日新電機株式会社 荷電粒子ビームの分布測定方法およびそれに関連する方法
JP4207307B2 (ja) 1999-04-26 2009-01-14 日新イオン機器株式会社 チャージアップ測定装置
US6791094B1 (en) 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
GB2355337B (en) * 1999-10-12 2004-04-14 Applied Materials Inc Ion implanter and beam stop therefor
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US6437350B1 (en) * 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
US6573518B1 (en) 2000-10-30 2003-06-03 Varian Semiconductor Equipment Associates, Inc. Bi mode ion implantation with non-parallel ion beams
WO2002058103A2 (en) 2001-01-17 2002-07-25 Varian Semiconductor Equipment Associates, Inc. In situ ion beam incidence angle and beam divergence monitor
US7323700B1 (en) 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
ATE482227T1 (de) 2001-05-25 2010-10-15 Univ Duke Modulatoren pharmakologischer mittel
JP3692999B2 (ja) 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US6911660B2 (en) * 2002-10-02 2005-06-28 Varian Semiconductor Equipment Associates, Inc. Method of measuring ion beam angles
US6677598B1 (en) * 2003-04-29 2004-01-13 Axcelis Technologies, Inc. Beam uniformity and angular distribution measurement system
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
JP4133883B2 (ja) 2003-12-04 2008-08-13 日新イオン機器株式会社 イオンビーム装置
JP4251453B2 (ja) 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2006019048A (ja) 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
EP1722398B1 (de) * 2005-05-14 2009-11-25 FEI Company Ablenksignal-Kompensation für ein Strahl von geladenen Teilchen
JP4561690B2 (ja) * 2005-05-24 2010-10-13 日新イオン機器株式会社 イオンビーム計測方法およびイオン注入装置
US7397049B2 (en) 2006-03-22 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
KR100785725B1 (ko) 2006-05-23 2007-12-18 닛신 이온기기 가부시기가이샤 이온 빔 계측 방법 및 이온 주입 장치
US7663125B2 (en) * 2006-06-09 2010-02-16 Varian Semiconductor Equipment Associates, Inc. Ion beam current uniformity monitor, ion implanter and related method
JP4872603B2 (ja) * 2006-10-31 2012-02-08 日新イオン機器株式会社 イオン注入装置
US7547900B2 (en) * 2006-12-22 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a ribbon-shaped gas cluster ion beam
JP5103968B2 (ja) * 2007-03-20 2012-12-19 日新イオン機器株式会社 イオンビームの進行角修正方法およびイオン注入装置
JP4784544B2 (ja) * 2007-04-03 2011-10-05 日新イオン機器株式会社 イオンビームのビーム幅、発散角の測定方法およびイオン注入装置
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8314409B2 (en) 2009-08-28 2012-11-20 Fei Company Pattern modification schemes for improved FIB patterning
JP5970394B2 (ja) * 2013-02-27 2016-08-17 株式会社日立ハイテクノロジーズ 検査装置
JP6195538B2 (ja) * 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4011449A (en) * 1975-11-05 1977-03-08 Ibm Corporation Apparatus for measuring the beam current of charged particle beam
JPS56126918A (en) * 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
JPS62295347A (ja) * 1986-04-09 1987-12-22 イクリプス・イオン・テクノロジ−・インコ−ポレイテツド イオンビ−ム高速平行走査装置
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPS6386340A (ja) * 1986-09-30 1988-04-16 Fujitsu Ltd 一次粒子線照射装置
US4724324A (en) * 1986-11-24 1988-02-09 Varian Associates, Inc. Method and apparatus for ion beam centroid location
JPS63152844A (ja) * 1986-12-16 1988-06-25 Nec Corp イオンビ−ムスキヤン制御装置
US4967380A (en) * 1987-09-16 1990-10-30 Varian Associates, Inc. Dual channel signal processor using weighted integration of log-ratios and ion beam position sensor utilizing the signal processor
US4851693A (en) * 1988-06-03 1989-07-25 Varian Associates, Inc. Compensated scan wave form generator for ion implantation equipment
JPH077658B2 (ja) * 1989-05-15 1995-01-30 日新電機株式会社 イオン注入装置
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置

Also Published As

Publication number Publication date
KR940009197B1 (ko) 1994-10-01
EP0457321B1 (de) 1997-01-15
US5180918A (en) 1993-01-19
JP2969788B2 (ja) 1999-11-02
KR910020793A (ko) 1991-12-20
EP0457321A3 (en) 1992-03-18
DE69124136T2 (de) 1997-04-24
EP0457321A2 (de) 1991-11-21
JPH0422900A (ja) 1992-01-27

Similar Documents

Publication Publication Date Title
DE69124136D1 (de) Verfahren und Vorrichtung zur Messung der Bündelung eines Ionenstrahls zur Formung und Kontrolle der Ablenkung desselben
DE69117942D1 (de) Verfahren und vorrichtung zur optischen messung der konzentration eines analyten
DE69210522D1 (de) Verfahren und Vorrichtung zur Bestimmung eines Ionenstrahlquerschnitts
DE69624142D1 (de) Verfahren und vorrichtung zur messung des abstandes oder der position eines objektes mittels nahfeld- oder magnetischer effektes
DE69426761D1 (de) Verfahren und Vorrichtung zur Messung der Ionenkonzentration
DE3861974D1 (de) Vorrichtung und verfahren zur messung des schwerpunktes eines flugzeuges.
DE59308438D1 (de) Verfahren und Vorrichtung zur Feststellung der Funktionsfähigkeit eines Hämo-Dialysators
DE69033269D1 (de) Verfahren und Vorrichtung zum Messen der Position und Stellung eines Gegenstandes
DE59000059D1 (de) Verfahren und vorrichtung zur vermessung der oberflaeche eines objektes mittels projektion von streifenmustern.
DE69032185D1 (de) Verfahren und Vorrichtung zur Kontrolle der Bearbeitungsspur eines Industrieroboters
DE69217022D1 (de) Verfahren und Vorrichtung zur Messung der Parameter eines Reifens
DE69332878D1 (de) Verfahren und vorrichtung zur bestimmung der bahn eines überschallprojektils
DE69529391D1 (de) Verfahren und Vorrichtung zur Messung mittels Rundsing-Technik
AT382971B (de) Verfahren und vorrichtung zur messung der blutgerinnungszeit
DE69124843D1 (de) Verfahren und Vorrichtung zur Messung von Radwinkeln
DE3852108D1 (de) Vorrichtung und verfahren zur optischen messung der konzentration an material.
DE59302962D1 (de) Verfahren und Vorrichtung zur Abstandsmessung
DE69425995D1 (de) Verfahren und Vorrichtung zur elektronischen Messung von Strahl-Parametern
DE3681710D1 (de) Vorrichtung und verfahren zur standortbestimmung eines objekts.
DE69112090D1 (de) Verfahren und Vorrichtung zur Messung von Musterdimensionen.
DE3768562D1 (de) Verfahren und vorrichtung zur dimensionsmessung eines objektes.
DE3781989D1 (de) Vorrichtung und verfahren zur informationskodierung eines optischen strahles.
DE69119397D1 (de) Härteprüfeinrichtung und verfahren zur messung der härte von metallischen werkstoffen
DE69114886D1 (de) Verfahren und Gerät zur Messung der Biostromverteilung.
DE69222382D1 (de) Verfahren und Vorrichtung zur Messung von Lageabweichungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NISSIN ION EQUIPMENT CO., LTD., KYOTO, JP

8339 Ceased/non-payment of the annual fee