DE69033619T2 - Verfahren zur Verwendung einer Halbleiteranordnung mit einem Substrat, das eine dielektrisch isolierte Halbleiterinsel aufweist - Google Patents
Verfahren zur Verwendung einer Halbleiteranordnung mit einem Substrat, das eine dielektrisch isolierte Halbleiterinsel aufweistInfo
- Publication number
- DE69033619T2 DE69033619T2 DE69033619T DE69033619T DE69033619T2 DE 69033619 T2 DE69033619 T2 DE 69033619T2 DE 69033619 T DE69033619 T DE 69033619T DE 69033619 T DE69033619 T DE 69033619T DE 69033619 T2 DE69033619 T2 DE 69033619T2
- Authority
- DE
- Germany
- Prior art keywords
- island
- collector
- region
- location
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000969 carrier Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 238000005513 bias potential Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46171590A | 1990-01-08 | 1990-01-08 | |
PCT/US1990/007562 WO1991011028A1 (en) | 1990-01-08 | 1990-12-20 | Thin, dielectrically isolated island resident transistor structure having low collector resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69033619D1 DE69033619D1 (de) | 2000-10-05 |
DE69033619T2 true DE69033619T2 (de) | 2001-04-26 |
Family
ID=23833659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69033619T Expired - Fee Related DE69033619T2 (de) | 1990-01-08 | 1990-12-20 | Verfahren zur Verwendung einer Halbleiteranordnung mit einem Substrat, das eine dielektrisch isolierte Halbleiterinsel aufweist |
Country Status (11)
Country | Link |
---|---|
US (1) | US5327006A (de) |
EP (1) | EP0462270B1 (de) |
JP (1) | JPH04506588A (de) |
KR (1) | KR0170774B1 (de) |
AT (1) | ATE196035T1 (de) |
BR (1) | BR9007213A (de) |
CA (1) | CA2033780C (de) |
DE (1) | DE69033619T2 (de) |
ES (1) | ES2152919T3 (de) |
TW (1) | TW197532B (de) |
WO (1) | WO1991011028A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2654268B2 (ja) * | 1991-05-13 | 1997-09-17 | 株式会社東芝 | 半導体装置の使用方法 |
JPH06151573A (ja) * | 1992-11-06 | 1994-05-31 | Hitachi Ltd | 半導体集積回路装置 |
US5644157A (en) * | 1992-12-25 | 1997-07-01 | Nippondenso Co., Ltd. | High withstand voltage type semiconductor device having an isolation region |
WO1994015360A1 (en) * | 1992-12-25 | 1994-07-07 | Nippondenso Co., Ltd. | Semiconductor device |
US5373183A (en) * | 1993-04-28 | 1994-12-13 | Harris Corporation | Integrated circuit with improved reverse bias breakdown |
US5448104A (en) * | 1993-07-17 | 1995-09-05 | Analog Devices, Inc. | Bipolar transistor with base charge controlled by back gate bias |
SE513512C2 (sv) * | 1994-10-31 | 2000-09-25 | Ericsson Telefon Ab L M | Halvledaranordning med ett flytande kollektorområde |
DE19611692C2 (de) * | 1996-03-25 | 2002-07-18 | Infineon Technologies Ag | Bipolartransistor mit Hochenergie-implantiertem Kollektor und Herstellverfahren |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
KR100319615B1 (ko) | 1999-04-16 | 2002-01-09 | 김영환 | 반도체 장치에서의 소자격리방법 |
JP2001351266A (ja) * | 2000-04-06 | 2001-12-21 | Fujitsu Ltd | 光ピックアップ及び光記憶装置 |
JP3730483B2 (ja) * | 2000-06-30 | 2006-01-05 | 株式会社東芝 | バイポーラトランジスタ |
US6486043B1 (en) | 2000-08-31 | 2002-11-26 | International Business Machines Corporation | Method of forming dislocation filter in merged SOI and non-SOI chips |
US6624449B1 (en) * | 2001-07-17 | 2003-09-23 | David C. Scott | Three terminal edge illuminated epilayer waveguide phototransistor |
US20100117153A1 (en) * | 2008-11-07 | 2010-05-13 | Honeywell International Inc. | High voltage soi cmos device and method of manufacture |
US8350352B2 (en) * | 2009-11-02 | 2013-01-08 | Analog Devices, Inc. | Bipolar transistor |
JP5971035B2 (ja) * | 2012-08-29 | 2016-08-17 | トヨタ自動車株式会社 | 半導体装置 |
WO2015026371A1 (en) * | 2013-08-23 | 2015-02-26 | Intel Corporation | High resistance layer for iii-v channel deposited on group iv substrates for mos transistors |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953255A (en) * | 1971-12-06 | 1976-04-27 | Harris Corporation | Fabrication of matched complementary transistors in integrated circuits |
US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
US4309715A (en) * | 1979-12-28 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Integral turn-on high voltage switch |
US4868624A (en) * | 1980-05-09 | 1989-09-19 | Regents Of The University Of Minnesota | Channel collector transistor |
JPS58171856A (ja) * | 1982-04-02 | 1983-10-08 | Hitachi Ltd | 半導体集積回路装置 |
US4819049A (en) * | 1985-09-16 | 1989-04-04 | Tektronix, Inc. | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness |
US4665425A (en) * | 1985-10-16 | 1987-05-12 | Harris Corporation | Fabrication of vertical NPN and PNP bipolar transistors in monolithic substrate |
-
1990
- 1990-12-20 EP EP91903120A patent/EP0462270B1/de not_active Expired - Lifetime
- 1990-12-20 AT AT91903120T patent/ATE196035T1/de not_active IP Right Cessation
- 1990-12-20 BR BR909007213A patent/BR9007213A/pt not_active IP Right Cessation
- 1990-12-20 WO PCT/US1990/007562 patent/WO1991011028A1/en active IP Right Grant
- 1990-12-20 DE DE69033619T patent/DE69033619T2/de not_active Expired - Fee Related
- 1990-12-20 ES ES91903120T patent/ES2152919T3/es not_active Expired - Lifetime
- 1990-12-20 JP JP91503294A patent/JPH04506588A/ja active Pending
-
1991
- 1991-01-08 CA CA002033780A patent/CA2033780C/en not_active Expired - Fee Related
- 1991-01-08 KR KR1019910000169A patent/KR0170774B1/ko not_active IP Right Cessation
- 1991-02-22 TW TW080101388A patent/TW197532B/zh active
- 1991-09-05 US US07/755,314 patent/US5327006A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0462270A4 (de) | 1994-03-18 |
ES2152919T3 (es) | 2001-02-16 |
CA2033780C (en) | 1996-07-30 |
WO1991011028A1 (en) | 1991-07-25 |
JPH04506588A (ja) | 1992-11-12 |
DE69033619D1 (de) | 2000-10-05 |
ATE196035T1 (de) | 2000-09-15 |
EP0462270A1 (de) | 1991-12-27 |
US5327006A (en) | 1994-07-05 |
CA2033780A1 (en) | 1991-07-09 |
TW197532B (de) | 1993-01-01 |
EP0462270B1 (de) | 2000-08-30 |
KR910014995A (ko) | 1991-08-31 |
BR9007213A (pt) | 1992-02-18 |
KR0170774B1 (ko) | 1999-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |