DE69009799D1 - Verfahren zur Herstellung einer Einkristallschicht aus Diamant. - Google Patents

Verfahren zur Herstellung einer Einkristallschicht aus Diamant.

Info

Publication number
DE69009799D1
DE69009799D1 DE69009799T DE69009799T DE69009799D1 DE 69009799 D1 DE69009799 D1 DE 69009799D1 DE 69009799 T DE69009799 T DE 69009799T DE 69009799 T DE69009799 T DE 69009799T DE 69009799 D1 DE69009799 D1 DE 69009799D1
Authority
DE
Germany
Prior art keywords
diamond
producing
single crystal
crystal layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009799T
Other languages
English (en)
Other versions
DE69009799T2 (de
Inventor
Hiromu Shiomi
Takahiro Imai
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69009799D1 publication Critical patent/DE69009799D1/de
Application granted granted Critical
Publication of DE69009799T2 publication Critical patent/DE69009799T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide
    • Y10S117/919—Organic
DE69009799T 1989-03-07 1990-03-07 Verfahren zur Herstellung einer Einkristallschicht aus Diamant. Expired - Fee Related DE69009799T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1054476A JP2730144B2 (ja) 1989-03-07 1989-03-07 単結晶ダイヤモンド層形成法

Publications (2)

Publication Number Publication Date
DE69009799D1 true DE69009799D1 (de) 1994-07-21
DE69009799T2 DE69009799T2 (de) 1994-11-17

Family

ID=12971723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009799T Expired - Fee Related DE69009799T2 (de) 1989-03-07 1990-03-07 Verfahren zur Herstellung einer Einkristallschicht aus Diamant.

Country Status (4)

Country Link
US (1) US5400738A (de)
EP (1) EP0386727B1 (de)
JP (1) JP2730144B2 (de)
DE (1) DE69009799T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5704976A (en) * 1990-07-06 1998-01-06 The United States Of America As Represented By The Secretary Of The Navy High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma
DE4027580A1 (de) * 1990-08-31 1992-03-05 Lux Benno Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
AU2912292A (en) * 1991-11-05 1993-06-07 Research Triangle Institute Chemical vapor deposition of diamond films using water-based plasma discharges
JP3491237B2 (ja) * 1993-09-24 2004-01-26 日本テキサス・インスツルメンツ株式会社 半導体装置の積層導電膜構造
JP3051912B2 (ja) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 リンドープダイヤモンドの合成法
AU2001266246B2 (en) * 2000-06-15 2004-10-07 Element Six (Pty) Ltd Thick single crystal diamond layer method for making it and gemstones produced from the layer
US6833027B2 (en) * 2001-09-26 2004-12-21 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing high voltage schottky diamond diodes with low boron doping
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB2433738B (en) * 2002-11-21 2007-08-15 Element Six Ltd Optical Quality Diamond Material
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
JP4759315B2 (ja) * 2004-05-21 2011-08-31 独立行政法人物質・材料研究機構 超電導性を有するホウ素ドープダイヤモンド薄膜
CN1957116B (zh) 2004-05-27 2010-04-28 凸版印刷株式会社 纳米晶体金刚石薄膜、其制造方法及使用纳米晶体金刚石薄膜的装置
EP1996751A2 (de) * 2006-02-07 2008-12-03 Target Technology Company, LLC. Materialien und verfahren zur herstellung von grosskristalldiamanten
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
US10273598B2 (en) * 2009-12-22 2019-04-30 Element Six Technologies Limited Synthetic CVD diamond

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3630678A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
JPS59154965A (ja) * 1983-02-22 1984-09-04 Tamagawa Kikai Kk 魚体の処理装置
JPS59164607A (ja) * 1983-03-11 1984-09-17 Showa Denko Kk ダイヤモンド合成法
JPS60127298A (ja) * 1983-12-09 1985-07-06 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS60191097A (ja) * 1984-03-08 1985-09-28 Mitsubishi Metal Corp 人工ダイヤモンドの析出生成方法
JPS61183198A (ja) * 1984-12-29 1986-08-15 Kyocera Corp ダイヤモンド膜の製法
JPS61158899A (ja) * 1985-07-31 1986-07-18 Kyocera Corp ダイヤモンド膜の製法
JPS6270295A (ja) * 1985-09-24 1987-03-31 Sumitomo Electric Ind Ltd ｎ型半導体ダイヤモンド膜の製造法
JPS632897A (ja) * 1986-06-21 1988-01-07 Yoichi Hirose 気相法によるダイヤモンドの合成法
JPH0768078B2 (ja) * 1986-07-11 1995-07-26 京セラ株式会社 ダイヤモンド膜の製造方法
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
JPS63252997A (ja) * 1987-04-07 1988-10-20 Sharp Corp ダイヤモンド単結晶の製造方法
JPH01197391A (ja) * 1988-02-01 1989-08-09 Idemitsu Petrochem Co Ltd ダイヤモンドの合成方法
JPH01290592A (ja) * 1988-05-16 1989-11-22 Idemitsu Petrochem Co Ltd ダイヤモンドの合成方法

Also Published As

Publication number Publication date
JP2730144B2 (ja) 1998-03-25
EP0386727B1 (de) 1994-06-15
EP0386727A1 (de) 1990-09-12
US5400738A (en) 1995-03-28
JPH02233590A (ja) 1990-09-17
DE69009799T2 (de) 1994-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee