DE68927726D1 - Einrichtung zum Trockenätzen mit einem Generator zum Erzeugen von wasserfreiem Flusssäuregas - Google Patents
Einrichtung zum Trockenätzen mit einem Generator zum Erzeugen von wasserfreiem FlusssäuregasInfo
- Publication number
- DE68927726D1 DE68927726D1 DE68927726T DE68927726T DE68927726D1 DE 68927726 D1 DE68927726 D1 DE 68927726D1 DE 68927726 T DE68927726 T DE 68927726T DE 68927726 T DE68927726 T DE 68927726T DE 68927726 D1 DE68927726 D1 DE 68927726D1
- Authority
- DE
- Germany
- Prior art keywords
- generator
- dry etching
- hydrofluoric acid
- acid gas
- anhydrous hydrofluoric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title 2
- 238000001312 dry etching Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63181224A JPH02175883A (ja) | 1988-07-20 | 1988-07-20 | 無水フッ化水素希釈ガス発生装置 |
JP63181226A JPH0231419A (ja) | 1988-07-20 | 1988-07-20 | ドライエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68927726D1 true DE68927726D1 (de) | 1997-03-13 |
DE68927726T2 DE68927726T2 (de) | 1997-07-17 |
Family
ID=26500486
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68927726T Expired - Lifetime DE68927726T2 (de) | 1988-07-20 | 1989-07-18 | Einrichtung zum Trockenätzen mit einem Generator zum Erzeugen von wasserfreiem Flusssäuregas |
DE68928435T Expired - Lifetime DE68928435T2 (de) | 1988-07-20 | 1989-07-18 | Generator zum Erzeugen von wasserfreier, verdünnter Flusssäure und seine Benutzung in einer Einrichtung zum Trockenätzen |
DE198989307253T Pending DE354669T1 (de) | 1988-07-20 | 1989-07-18 | Einrichtung und verfahren zum trockenaetzen und generator zum erzeugen von wasserfreier, verduennter fluss-saeure, die dafuer benoetigt wird. |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68928435T Expired - Lifetime DE68928435T2 (de) | 1988-07-20 | 1989-07-18 | Generator zum Erzeugen von wasserfreier, verdünnter Flusssäure und seine Benutzung in einer Einrichtung zum Trockenätzen |
DE198989307253T Pending DE354669T1 (de) | 1988-07-20 | 1989-07-18 | Einrichtung und verfahren zum trockenaetzen und generator zum erzeugen von wasserfreier, verduennter fluss-saeure, die dafuer benoetigt wird. |
Country Status (4)
Country | Link |
---|---|
US (2) | US5073232A (de) |
EP (2) | EP0604393B1 (de) |
KR (1) | KR950013065B1 (de) |
DE (3) | DE68927726T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04128010A (ja) * | 1990-09-19 | 1992-04-28 | Kyoto Handotai Kk | シリコン単結晶の切断方法 |
JPH04296021A (ja) * | 1991-03-26 | 1992-10-20 | Mitsubishi Electric Corp | 半導体基板の表面処理方法 |
WO1992022084A1 (en) * | 1991-05-21 | 1992-12-10 | Advantage Production Technology, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
JP2632262B2 (ja) * | 1991-08-20 | 1997-07-23 | 大日本スクリーン製造株式会社 | シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法 |
JP2896268B2 (ja) * | 1992-05-22 | 1999-05-31 | 三菱電機株式会社 | 半導体基板の表面処理装置及びその制御方法 |
US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
JP2833946B2 (ja) * | 1992-12-08 | 1998-12-09 | 日本電気株式会社 | エッチング方法および装置 |
US5913149A (en) * | 1992-12-31 | 1999-06-15 | Micron Technology, Inc. | Method for fabricating stacked layer silicon nitride for low leakage and high capacitance |
US5348627A (en) * | 1993-05-12 | 1994-09-20 | Georgia Tech Reserach Corporation | Process and system for the photoelectrochemical etching of silicon in an anhydrous environment |
US5425845A (en) * | 1993-06-09 | 1995-06-20 | Texas Instruments Incorporated | Method for selective removal of hard trench masks |
US5534066A (en) * | 1993-10-29 | 1996-07-09 | International Business Machines Corporation | Fluid delivery apparatus having an infrared feedline sensor |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
US5635102A (en) * | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
JP3297291B2 (ja) * | 1995-03-10 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
KR0170902B1 (ko) * | 1995-12-29 | 1999-03-30 | 김주용 | 반도체 소자의 제조방법 |
US5735962A (en) * | 1996-01-11 | 1998-04-07 | S3 Service Support Specialties, Inc. | Silicon substrate cleaning method and apparatus |
US6095158A (en) * | 1997-02-06 | 2000-08-01 | Lam Research Corporation | Anhydrous HF in-situ cleaning process of semiconductor processing chambers |
AT405655B (de) * | 1997-03-26 | 1999-10-25 | Sez Semiconduct Equip Zubehoer | Verfahren und vorrichtung zum einseitigen bearbeiten scheibenförmiger gegenstände |
US6126847A (en) * | 1997-11-24 | 2000-10-03 | Micron Technology Inc. | High selectivity etching process for oxides |
US6740247B1 (en) | 1999-02-05 | 2004-05-25 | Massachusetts Institute Of Technology | HF vapor phase wafer cleaning and oxide etching |
TW476996B (en) * | 2000-02-28 | 2002-02-21 | Mitsubishi Material Silicon | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
US20090001524A1 (en) * | 2001-11-26 | 2009-01-01 | Siegele Stephen H | Generation and distribution of a fluorine gas |
US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
US20030098038A1 (en) * | 2001-11-26 | 2003-05-29 | Siegele Stephen H. | System and method for on-site generation and distribution of fluorine for fabrication processes |
JP3953361B2 (ja) * | 2002-05-08 | 2007-08-08 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR100487556B1 (ko) * | 2002-12-30 | 2005-05-03 | 삼성전자주식회사 | 반도체 박막 증착장치 |
KR100986237B1 (ko) * | 2003-07-29 | 2010-10-07 | 유태승 | 전원플러그용 파이프형 전극봉의 제조방법 |
US20070098624A1 (en) * | 2005-10-27 | 2007-05-03 | Honeywell International Inc. | Andhydrous hydrogen fluoride composition and method of producing the same |
CN113950735A (zh) * | 2019-07-18 | 2022-01-18 | 东京毅力科创株式会社 | 具有可控金属蚀刻选择性的气相蚀刻 |
US20220285230A1 (en) * | 2021-03-05 | 2022-09-08 | Taiwan Semiconductor Manufacturing Company Limited | System and methods for controlling an amount of primer in a primer application gas |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4083941A (en) * | 1977-04-18 | 1978-04-11 | E. I. Du Pont De Nemours And Company | Purification of anhydrous hydrogen fluoride |
JPS5688320A (en) * | 1979-12-21 | 1981-07-17 | Fujitsu Ltd | Gas etching method |
US4307180A (en) * | 1980-08-22 | 1981-12-22 | International Business Machines Corp. | Process of forming recessed dielectric regions in a monocrystalline silicon substrate |
DE3129868A1 (de) * | 1981-07-29 | 1983-02-17 | Hoechst Ag, 6000 Frankfurt | "verfahren zur herstellung von flusssaeure aus fluor- und chlorhaltigen kohlenstoffverbindungen bei hoeheren temperaturen" |
JPS59166675A (ja) * | 1983-03-11 | 1984-09-20 | Fujitsu Ltd | エツチング装置 |
JPS61148820A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 処理方法 |
US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
ATE113757T1 (de) * | 1985-08-28 | 1994-11-15 | Fsi Int Inc | Verfahren und vorrichtung zum entfernen von schichten von substraten. |
-
1989
- 1989-07-18 DE DE68927726T patent/DE68927726T2/de not_active Expired - Lifetime
- 1989-07-18 EP EP94101109A patent/EP0604393B1/de not_active Expired - Lifetime
- 1989-07-18 EP EP89307253A patent/EP0354669B1/de not_active Expired - Lifetime
- 1989-07-18 DE DE68928435T patent/DE68928435T2/de not_active Expired - Lifetime
- 1989-07-18 DE DE198989307253T patent/DE354669T1/de active Pending
- 1989-07-20 KR KR1019890010285A patent/KR950013065B1/ko not_active IP Right Cessation
- 1989-12-21 US US07/454,575 patent/US5073232A/en not_active Expired - Lifetime
-
1991
- 1991-04-08 US US07/682,412 patent/US5100495A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0354669A2 (de) | 1990-02-14 |
KR910002707A (ko) | 1991-02-26 |
US5073232A (en) | 1991-12-17 |
KR950013065B1 (ko) | 1995-10-24 |
DE68927726T2 (de) | 1997-07-17 |
DE68928435D1 (de) | 1997-12-11 |
DE68928435T2 (de) | 1998-03-05 |
EP0604393A2 (de) | 1994-06-29 |
EP0604393A3 (en) | 1994-08-10 |
DE354669T1 (de) | 1990-11-08 |
EP0604393B1 (de) | 1997-11-05 |
EP0354669A3 (de) | 1990-11-14 |
EP0354669B1 (de) | 1997-01-29 |
US5100495A (en) | 1992-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee | ||
8370 | Indication of lapse of patent is to be deleted |