DE68926601D1 - Halbleitermessaufnehmer - Google Patents
HalbleitermessaufnehmerInfo
- Publication number
- DE68926601D1 DE68926601D1 DE68926601T DE68926601T DE68926601D1 DE 68926601 D1 DE68926601 D1 DE 68926601D1 DE 68926601 T DE68926601 T DE 68926601T DE 68926601 T DE68926601 T DE 68926601T DE 68926601 D1 DE68926601 D1 DE 68926601D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor sensor
- semiconductor
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S73/00—Measuring and testing
- Y10S73/04—Piezoelectric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63219862A JPH077013B2 (ja) | 1988-09-02 | 1988-09-02 | 半導体センサ |
JP63224975A JP2851049B2 (ja) | 1988-09-08 | 1988-09-08 | 半導体センサ |
JP349689A JP2641104B2 (ja) | 1989-01-10 | 1989-01-10 | 半導体応力センサ |
JP1458189A JPH02194343A (ja) | 1989-01-24 | 1989-01-24 | 半導体応力センサ |
JP1137883A JP2748277B2 (ja) | 1989-05-31 | 1989-05-31 | 半導体センサ |
JP1137884A JP2748278B2 (ja) | 1989-05-31 | 1989-05-31 | 半導体センサ |
JP1145752A JP2836846B2 (ja) | 1989-06-08 | 1989-06-08 | 半導体センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68926601D1 true DE68926601D1 (de) | 1996-07-11 |
DE68926601T2 DE68926601T2 (de) | 1997-01-23 |
Family
ID=27563232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68926601T Expired - Fee Related DE68926601T2 (de) | 1988-09-02 | 1989-09-01 | Halbleitermessaufnehmer |
Country Status (3)
Country | Link |
---|---|
US (2) | US5115292A (de) |
EP (1) | EP0363005B1 (de) |
DE (1) | DE68926601T2 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2653197B1 (fr) * | 1989-10-12 | 1991-12-27 | Vulcanic | Procede d'etancheification d'une extremite d'element de chauffage electrique et element etancheifie par ce procede. |
JP2532149B2 (ja) * | 1990-02-06 | 1996-09-11 | 本田技研工業株式会社 | 半導体センサ |
JP2587147B2 (ja) * | 1991-05-17 | 1997-03-05 | 本田技研工業株式会社 | 半導体センサ |
DE4137624A1 (de) * | 1991-11-15 | 1993-05-19 | Bosch Gmbh Robert | Silizium-chip zur verwendung in einem kraftsensor |
US5549785A (en) * | 1992-09-14 | 1996-08-27 | Nippondenso Co., Ltd. | Method of producing a semiconductor dynamic sensor |
US5508231A (en) * | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
JP3055175B2 (ja) * | 1994-09-12 | 2000-06-26 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 電気機械変換器 |
US5578528A (en) * | 1995-05-02 | 1996-11-26 | Industrial Technology Research Institute | Method of fabrication glass diaphragm on silicon macrostructure |
US5663508A (en) * | 1995-08-07 | 1997-09-02 | Delco Electronics Corporation | Silicon flow sensor |
JP2852886B2 (ja) * | 1995-09-04 | 1999-02-03 | 本田技研工業株式会社 | 半導体応力センサ |
KR0176237B1 (ko) * | 1995-12-08 | 1999-03-20 | 양승택 | 박막 트랜지스터 및 그의 제조방법 |
IL116536A0 (en) * | 1995-12-24 | 1996-03-31 | Harunian Dan | Direct integration of sensing mechanisms with single crystal based micro-electric-mechanics systems |
JP3580827B2 (ja) * | 1996-01-22 | 2004-10-27 | カイロス・インク | 微細加工製作シリコン羽根型マイクロ流量計 |
US5663507A (en) * | 1996-03-18 | 1997-09-02 | President And Fellows At Harvard College | Semiconductor piezoelectric strain measuring transducer |
US6448624B1 (en) * | 1996-08-09 | 2002-09-10 | Denso Corporation | Semiconductor acceleration sensor |
US6263735B1 (en) * | 1997-09-10 | 2001-07-24 | Matsushita Electric Industrial Co., Ltd. | Acceleration sensor |
JP3700910B2 (ja) * | 1997-10-16 | 2005-09-28 | セイコーインスツル株式会社 | 半導体歪センサ及びその製造方法ならびに走査プローブ顕微鏡 |
WO2004090556A1 (ja) | 1997-11-11 | 2004-10-21 | Makoto Ishida | シリコン集積化加速度センサ |
SE9801766D0 (sv) * | 1998-05-19 | 1998-05-19 | Siemens Elema Ab | Fluid flow meter |
WO2004106943A1 (en) * | 2003-05-27 | 2004-12-09 | Eidgenössische Technische Hochschule Zürich | Accelerometer system |
US6647796B2 (en) * | 2000-08-11 | 2003-11-18 | California Institue Of Technology | Semiconductor nitride pressure microsensor and method of making and using the same |
DE10053314B4 (de) * | 2000-10-27 | 2012-02-09 | Abb Research Ltd. | Vorrichtung zum Messen der Sauertoffkonzentration in Gasen |
JP2002286083A (ja) * | 2001-03-27 | 2002-10-03 | Canon Inc | 除振装置、デバイス製造装置、デバイス製造方法、半導体製造工場およびデバイス製造装置の保守方法 |
WO2002103367A1 (en) * | 2001-06-18 | 2002-12-27 | Thomas P. Kicher & Co. | Acceleration transducer and method |
US20040129078A1 (en) * | 2001-06-18 | 2004-07-08 | Kicher Thomas P. | Acceleration transducer and method |
JP2003090969A (ja) * | 2001-09-17 | 2003-03-28 | Olympus Optical Co Ltd | 可変形状シリンダミラー |
US20030115978A1 (en) * | 2001-12-20 | 2003-06-26 | Moehnke Stephanie J. | Apparatus and method for monitoring environment within a container |
FR2838522B1 (fr) * | 2002-04-12 | 2004-06-25 | Sagem | Capteur inertiel a sonde de temperature integree |
JP4007115B2 (ja) * | 2002-08-09 | 2007-11-14 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
US7043969B2 (en) * | 2002-10-18 | 2006-05-16 | Symyx Technologies, Inc. | Machine fluid sensor and method |
EP1606600A2 (de) * | 2003-03-18 | 2005-12-21 | Microgan GmbH | Sensorelemente mit freitragenden balkenstrukturen aus halbleitern auf gruppe-iii-nitridbasis |
US7352107B2 (en) * | 2003-03-31 | 2008-04-01 | Suren Systems, Ltd. | Transconductance circuit for piezoelectric transducer |
EP1651943A2 (de) * | 2003-06-27 | 2006-05-03 | Purdue Research Foundation | Vorrichtung zum nachweis biologischer und chemischer partikel |
US20050172717A1 (en) * | 2004-02-06 | 2005-08-11 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
US7032454B2 (en) * | 2004-03-05 | 2006-04-25 | Agilent Technologies, Inc. | Piezoelectric cantilever pressure sensor array |
DE102006056046B4 (de) * | 2006-11-28 | 2009-04-02 | Abb Ag | Paramagnetischer Sauerstoffsensor |
JP4994098B2 (ja) * | 2007-04-25 | 2012-08-08 | 株式会社リコー | 半導体センサ及びその製造方法 |
JP4990049B2 (ja) * | 2007-07-02 | 2012-08-01 | 株式会社リコー | 温度検出回路 |
US8132465B1 (en) * | 2007-08-01 | 2012-03-13 | Silicon Microstructures, Inc. | Sensor element placement for package stress compensation |
JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
US8534143B2 (en) * | 2009-10-02 | 2013-09-17 | Parker-Hannifin Corporation | Low-power force sensor |
DE102011075541A1 (de) | 2011-05-10 | 2012-11-15 | Robert Bosch Gmbh | Auswerteschaltung für Feldeffekttransistor mit beweglicher Gatestruktur |
US9728652B2 (en) * | 2012-01-25 | 2017-08-08 | Infineon Technologies Ag | Sensor device and method |
JP5778619B2 (ja) * | 2012-05-02 | 2015-09-16 | セイコーインスツル株式会社 | 圧力センサ |
EP2690418A1 (de) * | 2012-07-24 | 2014-01-29 | Honeywell International Inc. | Drucksensor mit flexibler Membran mit aktiven Schaltungskomponenten darauf |
CN106062525B (zh) * | 2014-03-13 | 2019-07-09 | 精工电子有限公司 | 压力传感器 |
WO2015181732A1 (en) * | 2014-05-27 | 2015-12-03 | Fondazione Istituto Italiano Di Tecnologia | Read circuit for posfet type tactile sensor devices |
US10663357B2 (en) * | 2014-12-10 | 2020-05-26 | Paul D OKULOV | Micro electro-mechanical strain displacement sensor and usage monitoring system |
US20170057810A1 (en) * | 2015-09-01 | 2017-03-02 | Apple Inc. | Strain Reduction and Sensing on Package Substrates |
DE112016006276B4 (de) * | 2016-01-21 | 2024-06-06 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
CN109561839B (zh) * | 2016-08-09 | 2022-12-06 | 皇家飞利浦有限公司 | 母体监测换能器和操作方法 |
WO2018051703A1 (ja) * | 2016-09-14 | 2018-03-22 | 国立大学法人神戸大学 | 力センサ、および、力センサの製造方法 |
EP3618101A1 (de) * | 2018-08-31 | 2020-03-04 | Melexis Technologies NV | Sensorvorrichtung und verfahren zu ihrer herstellung |
US11536260B2 (en) * | 2018-09-17 | 2022-12-27 | Microjet Technology Co., Ltd. | Micro-electromechanical system pump |
CN110943066A (zh) * | 2018-09-21 | 2020-03-31 | 联华电子股份有限公司 | 具有高电阻晶片的半导体结构及高电阻晶片的接合方法 |
FR3086405B1 (fr) | 2018-09-24 | 2020-12-25 | St Microelectronics Sa | Dispositif electronique capable de former un capteur de temperature ou une source de courant delivrant un courant independant de la temperature. |
JP7092692B2 (ja) | 2019-01-22 | 2022-06-28 | エイブリック株式会社 | 応力補償制御回路及び半導体センサ装置 |
US11867570B2 (en) | 2020-03-06 | 2024-01-09 | Stmicroelectronics Sa | Thermal sensor circuit |
EP3945299A1 (de) | 2020-07-30 | 2022-02-02 | Université catholique de Louvain | Dehnungssensor |
KR102513689B1 (ko) * | 2020-12-14 | 2023-03-24 | 한국생산기술연구원 | 전계효과를 이용한 압저항형 mems 가속도계 |
DE102021206134A1 (de) * | 2021-06-16 | 2022-12-22 | Robert Bosch Gesellschaft mit beschränkter Haftung | Stress- und/oder Dehnungsmesszelle für ein Stress- und/oder Dehnungsmesssystem |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1336813A (fr) * | 1962-07-25 | 1963-09-06 | Csf | Dispositif de mesure des contraintes à semi-conducteur |
US3624315A (en) * | 1967-01-23 | 1971-11-30 | Max E Broce | Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices |
JPS525838B1 (de) * | 1970-11-30 | 1977-02-16 | ||
US4522472A (en) * | 1982-02-19 | 1985-06-11 | North American Philips Corporation | Electrophoretic image display with reduced drives and leads |
GB2130373B (en) * | 1982-11-17 | 1986-12-31 | Stc Plc | Accelerometer device |
JPS5995420A (ja) * | 1982-11-24 | 1984-06-01 | Hitachi Ltd | Mos型センサ |
JPS59158566A (ja) * | 1983-02-28 | 1984-09-08 | Nippon Denso Co Ltd | 半導体加速度センサ |
US4522072A (en) * | 1983-04-22 | 1985-06-11 | Insouth Microsystems, Inc. | Electromechanical transducer strain sensor arrangement and construction |
US4658279A (en) * | 1983-09-08 | 1987-04-14 | Wisconsin Alumini Research Foundation | Velocity saturated strain sensitive semiconductor devices |
US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
EP0178133B1 (de) * | 1984-10-08 | 1990-12-27 | Fujitsu Limited | Halbleiteranordnung mit integrierter Schaltung |
JPS6197572A (ja) * | 1984-10-19 | 1986-05-16 | Nissan Motor Co Ltd | 半導体加速度センサの製造方法 |
JPS62121367A (ja) * | 1985-11-22 | 1987-06-02 | Nissan Motor Co Ltd | 半導体加速度センサ |
JPS62213280A (ja) * | 1986-03-14 | 1987-09-19 | Nissan Motor Co Ltd | 半導体加速度センサ |
JPS6318272A (ja) * | 1986-07-10 | 1988-01-26 | Nippon Steel Corp | 圧電形加速度検出器 |
US4706100A (en) * | 1986-08-01 | 1987-11-10 | Honeywell Inc. | High temperature hetero-epitaxial pressure sensor |
JPS63222464A (ja) * | 1987-03-11 | 1988-09-16 | Fujitsu Ltd | 半導体加速度センサ |
US4873871A (en) * | 1988-06-17 | 1989-10-17 | Motorola, Inc. | Mechanical field effect transistor sensor |
-
1989
- 1989-09-01 EP EP89308866A patent/EP0363005B1/de not_active Expired - Lifetime
- 1989-09-01 DE DE68926601T patent/DE68926601T2/de not_active Expired - Fee Related
- 1989-09-05 US US07/403,296 patent/US5115292A/en not_active Expired - Lifetime
-
1992
- 1992-03-09 US US07/848,693 patent/US5279162A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68926601T2 (de) | 1997-01-23 |
EP0363005B1 (de) | 1996-06-05 |
EP0363005A3 (de) | 1991-05-29 |
EP0363005A2 (de) | 1990-04-11 |
US5115292A (en) | 1992-05-19 |
US5279162A (en) | 1994-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |