DE68909621D1 - Ladungsverstärkerschaltung mit Junction-Feldeffekttransistor. - Google Patents

Ladungsverstärkerschaltung mit Junction-Feldeffekttransistor.

Info

Publication number
DE68909621D1
DE68909621D1 DE89300335T DE68909621T DE68909621D1 DE 68909621 D1 DE68909621 D1 DE 68909621D1 DE 89300335 T DE89300335 T DE 89300335T DE 68909621 T DE68909621 T DE 68909621T DE 68909621 D1 DE68909621 D1 DE 68909621D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
amplifier circuit
charge amplifier
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89300335T
Other languages
English (en)
Other versions
DE68909621T2 (de
Inventor
Tawfic Saeb Nashashibi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Link Analytical Ltd
Original Assignee
Link Analytical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Link Analytical Ltd filed Critical Link Analytical Ltd
Application granted granted Critical
Publication of DE68909621D1 publication Critical patent/DE68909621D1/de
Publication of DE68909621T2 publication Critical patent/DE68909621T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/70—Charge amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE1989609621 1988-01-16 1989-01-13 Ladungsverstärkerschaltung mit Junction-Feldeffekttransistor. Expired - Lifetime DE68909621T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888800949A GB8800949D0 (en) 1988-01-16 1988-01-16 Junction field effect transistors

Publications (2)

Publication Number Publication Date
DE68909621D1 true DE68909621D1 (de) 1993-11-11
DE68909621T2 DE68909621T2 (de) 1994-02-10

Family

ID=10630060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989609621 Expired - Lifetime DE68909621T2 (de) 1988-01-16 1989-01-13 Ladungsverstärkerschaltung mit Junction-Feldeffekttransistor.

Country Status (4)

Country Link
EP (1) EP0325383B1 (de)
JP (1) JP2581597B2 (de)
DE (1) DE68909621T2 (de)
GB (1) GB8800949D0 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6587003B2 (en) 2001-04-18 2003-07-01 Canberra Industries. Inc. Charge sensitive preamplifier with pulsed source reset
US8058674B2 (en) * 2009-10-07 2011-11-15 Moxtek, Inc. Alternate 4-terminal JFET geometry to reduce gate to source capacitance
GB2491111B (en) * 2011-05-19 2015-08-19 Oxford Instr Nanotechnology Tools Ltd Charge-sensitive amplifier
WO2014021358A1 (ja) 2012-08-02 2014-02-06 株式会社堀場製作所 増幅器及び放射線検出器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device
JPS53121485A (en) * 1977-03-30 1978-10-23 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type
JPS575353A (en) * 1981-03-03 1982-01-12 Nippon Gakki Seizo Kk Semiconductor integrated circuit device
JPS6173380A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0325383A2 (de) 1989-07-26
JPH023936A (ja) 1990-01-09
DE68909621T2 (de) 1994-02-10
EP0325383B1 (de) 1993-10-06
GB8800949D0 (en) 1988-02-17
JP2581597B2 (ja) 1997-02-12
EP0325383A3 (en) 1990-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition