DE3854098D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3854098D1
DE3854098D1 DE3854098T DE3854098T DE3854098D1 DE 3854098 D1 DE3854098 D1 DE 3854098D1 DE 3854098 T DE3854098 T DE 3854098T DE 3854098 T DE3854098 T DE 3854098T DE 3854098 D1 DE3854098 D1 DE 3854098D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854098T
Other languages
English (en)
Other versions
DE3854098T2 (de
Inventor
Paul Michael Solomon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3854098D1 publication Critical patent/DE3854098D1/de
Publication of DE3854098T2 publication Critical patent/DE3854098T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE3854098T 1987-03-20 1988-03-11 Feldeffekttransistor. Expired - Fee Related DE3854098T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/028,640 US4965645A (en) 1987-03-20 1987-03-20 Saturable charge FET

Publications (2)

Publication Number Publication Date
DE3854098D1 true DE3854098D1 (de) 1995-08-10
DE3854098T2 DE3854098T2 (de) 1996-02-29

Family

ID=21844609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854098T Expired - Fee Related DE3854098T2 (de) 1987-03-20 1988-03-11 Feldeffekttransistor.

Country Status (4)

Country Link
US (1) US4965645A (de)
EP (1) EP0283878B1 (de)
JP (1) JPH0797638B2 (de)
DE (1) DE3854098T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060031A (en) * 1990-09-18 1991-10-22 Motorola, Inc Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
US5125601A (en) * 1991-12-26 1992-06-30 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Payload retention device
US5514891A (en) * 1995-06-02 1996-05-07 Motorola N-type HIGFET and method
US6331486B1 (en) * 2000-03-06 2001-12-18 International Business Machines Corporation Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
CN110828564B (zh) * 2018-08-13 2022-04-08 香港科技大学 具有半导体性栅极的场效应晶体管

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663643A (en) * 1981-04-23 1987-05-05 Fujitsu Limited Semiconductor device and process for producing the same
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
JPS5932173A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
US4590502A (en) * 1983-03-07 1986-05-20 University Of Illinois Camel gate field effect transistor device
JPS59207667A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JPS59210673A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
JPS6028273A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体装置
JPS60117680A (ja) * 1983-11-29 1985-06-25 Nippon Telegr & Teleph Corp <Ntt> 高速電界効果トランジスタ
JPH0810751B2 (ja) * 1983-12-23 1996-01-31 株式会社日立製作所 半導体装置
JPS60140874A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
JPH0230182B2 (ja) * 1984-03-15 1990-07-04 Nippon Electric Co Handotaisochi
JPH0695531B2 (ja) * 1985-04-08 1994-11-24 日本電信電話株式会社 電界効果型トランジスタ

Also Published As

Publication number Publication date
JPS63244779A (ja) 1988-10-12
US4965645A (en) 1990-10-23
EP0283878B1 (de) 1995-07-05
DE3854098T2 (de) 1996-02-29
JPH0797638B2 (ja) 1995-10-18
EP0283878A1 (de) 1988-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee