DE68905210D1 - Hochstrom-duennfilmtransistor. - Google Patents

Hochstrom-duennfilmtransistor.

Info

Publication number: DE68905210D1
Authority: DE; Germany
Prior art keywords: thin film; film transistor; high current; current thin; transistor
Prior art date: 1988-03-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8989303000T

Other languages

English (en)

Other versions

DE68905210T2 (de

Inventor

Michael Hack

John Gary Shaw

Michael Shur

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Xerox Corp

Original Assignee

Xerox Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-29

Filing date

1989-03-28

Publication date

1993-04-15

1989-03-28 Application filed by Xerox Corp filed Critical Xerox Corp

1993-04-15 Application granted granted Critical

1993-04-15 Publication of DE68905210D1 publication Critical patent/DE68905210D1/de

1993-07-22 Publication of DE68905210T2 publication Critical patent/DE68905210T2/de

2009-03-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000010409 thin film Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Thin Film Transistor (AREA)

DE8989303000T 1988-03-29 1989-03-28 Hochstrom-duennfilmtransistor. Expired - Fee Related DE68905210T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/174,652 US4990977A (en)	1988-03-29	1988-03-29	High current thin film transistor

Publications (2)

Publication Number	Publication Date
DE68905210D1 true DE68905210D1 (de)	1993-04-15
DE68905210T2 DE68905210T2 (de)	1993-07-22

Family

ID=22636976

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8989303000T Expired - Fee Related DE68905210T2 (de)	1988-03-29	1989-03-28	Hochstrom-duennfilmtransistor.

Country Status (4)

Country	Link
US (1)	US4990977A (de)
EP (1)	EP0335632B1 (de)
JP (1)	JP2507031B2 (de)
DE (1)	DE68905210T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4996573A (en) *	1989-10-27	1991-02-26	Xerox Corporation	Vertical thin film transistor and optical sensor having leakage current suppression elements
JPH03252164A (ja) *	1990-02-28	1991-11-11	Sanyo Electric Co Ltd	薄膜トランジスタ
US7662698B2 (en) *	2006-11-07	2010-02-16	Raytheon Company	Transistor having field plate
US7995081B2 (en)	2008-06-25	2011-08-09	Palo Alto Research Center Incorporated	Anisotropically conductive backside addressable imaging belt for use with contact electrography
US9230985B1 (en)	2014-10-15	2016-01-05	Sandisk 3D Llc	Vertical TFT with tunnel barrier
EP3664171B1 (de) *	2018-12-06	2021-05-12	Flexterra, Inc.	Dünnschichttransistor mit organischen halbleitermaterialien

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CH455055A (de) *	1967-03-15	1968-04-30	Ibm	Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht
DE2611338C3 (de) *	1976-03-17	1979-03-29	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Feldeffekttransistor mit sehr kurzer Kanallange
JPS58132973A (ja) *	1982-02-01	1983-08-08	Semiconductor Energy Lab Co Ltd	絶縁ゲイト型電界効果半導体装置およびその作製方法
JPS6193669A (ja) *	1984-10-15	1986-05-12	Nec Corp	半導体素子
US4803533A (en) *	1986-09-30	1989-02-07	General Electric Company	IGT and MOSFET devices having reduced channel width
US4866495A (en) *	1987-05-27	1989-09-12	International Rectifier Corporation	High power MOSFET and integrated control circuit therefor for high-side switch application
US4746960A (en) *	1987-07-27	1988-05-24	General Motors Corporation	Vertical depletion-mode j-MOSFET

1988
- 1988-03-29 US US07/174,652 patent/US4990977A/en not_active Expired - Lifetime
1989
- 1989-03-20 JP JP1069108A patent/JP2507031B2/ja not_active Expired - Fee Related
- 1989-03-28 EP EP89303000A patent/EP0335632B1/de not_active Expired - Lifetime
- 1989-03-28 DE DE8989303000T patent/DE68905210T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
DE68905210T2 (de)	1993-07-22
EP0335632B1 (de)	1993-03-10
EP0335632A3 (de)	1991-01-16
US4990977A (en)	1991-02-05
JP2507031B2 (ja)	1996-06-12
EP0335632A2 (de)	1989-10-04
JPH0210873A (ja)	1990-01-16

Legal Events

Date	Code	Title	Description
1994-04-07	8364	No opposition during term of opposition
2009-01-22	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE68909973D1 (de)	1993-11-25	Dünnfilmtransistor.
DE69008386D1 (de)	1994-06-01	Dünnschichttransistor.
DE68912799D1 (de)	1994-03-17	Filmkassette.
DE68912800D1 (de)	1994-03-17	Filmkassette.
DE68910576D1 (de)	1993-12-16	Filmkassette.
DE3686605D1 (de)	1992-10-08	Photovoltaische duennfilmvorrichtung.
NO910578D0 (no)	1991-02-13	Tynnfilm elektrisk komponent.
DE68910249D1 (de)	1993-12-02	Hochspannungsdünnschichttransistoren.
DE69019051D1 (de)	1995-06-08	Dünnfilm-Elektrolumineszenzvorrichtung.
DE3881843D1 (de)	1993-07-22	Orientierte polyaethylenfolie.
DE69005722D1 (de)	1994-02-17	Biorientierter Film.
DE68921707D1 (de)	1995-04-20	Wasserdichter Film.
DE69021356D1 (de)	1995-09-07	Beschlagfreier Film.
DE3788134D1 (de)	1993-12-16	Dünnfilmanordnung.
DE69008292D1 (de)	1994-05-26	Filmkassette.
DE3785249D1 (de)	1993-05-13	Duennfilm-feldeffekttransistor.
DE69114984D1 (de)	1996-01-11	Dünnfilm-Transistor.
DE3689826D1 (de)	1994-06-09	Polarisierender film.
DE3581950D1 (de)	1991-04-11	Magnetischer duenner film.
FI853367A0 (fi)	1985-09-02	Texturerad termoplastfilm.
DE3883188D1 (de)	1993-09-16	Duennfilm-halbleiteranordung.
DE68915288D1 (de)	1994-06-16	Epitaktischer supraleitender ba-y-cu-o-film.
DE68923868D1 (de)	1995-09-21	Rhombenförmiges dünnfilm-magnetelement.
DE3586404D1 (de)	1992-09-03	Magnetischer duenner film.
DE3784545D1 (de)	1993-04-15	Filmzufuehrvorrichtung.