DE60332500D1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE60332500D1 DE60332500D1 DE60332500T DE60332500T DE60332500D1 DE 60332500 D1 DE60332500 D1 DE 60332500D1 DE 60332500 T DE60332500 T DE 60332500T DE 60332500 T DE60332500 T DE 60332500T DE 60332500 D1 DE60332500 D1 DE 60332500D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/000443 WO2004066391A1 (ja) | 2003-01-20 | 2003-01-20 | 半導体装置 |
PCT/JP2003/008869 WO2004066394A1 (ja) | 2003-01-20 | 2003-07-11 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60332500D1 true DE60332500D1 (de) | 2010-06-17 |
Family
ID=32750570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60332500T Expired - Lifetime DE60332500D1 (de) | 2003-01-20 | 2003-07-11 | Halbleitervorrichtung |
Country Status (8)
Country | Link |
---|---|
US (3) | US20050156283A1 (de) |
EP (1) | EP1601020B1 (de) |
JP (1) | JPWO2004066394A1 (de) |
KR (1) | KR100697770B1 (de) |
CN (1) | CN100414713C (de) |
DE (1) | DE60332500D1 (de) |
TW (1) | TWI241634B (de) |
WO (2) | WO2004066391A1 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
JP4907955B2 (ja) * | 2005-11-10 | 2012-04-04 | パナソニック株式会社 | ショットキーバリアダイオード及びその製造方法 |
JP2008066694A (ja) * | 2006-03-16 | 2008-03-21 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2007288094A (ja) * | 2006-04-20 | 2007-11-01 | Fuji Electric Device Technology Co Ltd | Igbtとそれを駆動するゲート駆動回路 |
JP4945167B2 (ja) * | 2006-05-12 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 |
JP4412344B2 (ja) * | 2007-04-03 | 2010-02-10 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2008311301A (ja) * | 2007-06-12 | 2008-12-25 | Sanyo Electric Co Ltd | 絶縁ゲートバイポーラトランジスタ |
US8710568B2 (en) * | 2007-10-24 | 2014-04-29 | Denso Corporation | Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same |
JP4600563B2 (ja) * | 2007-10-24 | 2010-12-15 | 株式会社デンソー | 半導体装置及びその製造方法 |
EP2073271A1 (de) * | 2007-12-19 | 2009-06-24 | ABB Technology AG | Rückwärtsleitender, bipolarer Transistor mit isoliertem Gate und Herstellungsverfahren dafür |
EP2086012A1 (de) * | 2007-12-19 | 2009-08-05 | ABB Technology AG | Rückwärtsleitender, bipolarer Transistor mit isoliertem Gate und Herstellungsverfahren dafür |
US8779462B2 (en) | 2008-05-19 | 2014-07-15 | Infineon Technologies Ag | High-ohmic semiconductor substrate and a method of manufacturing the same |
TW201015718A (en) * | 2008-10-03 | 2010-04-16 | Sanyo Electric Co | Semiconductor device and method for manufacturing the same |
JP2010098189A (ja) * | 2008-10-17 | 2010-04-30 | Toshiba Corp | 半導体装置 |
JP5366521B2 (ja) * | 2008-12-05 | 2013-12-11 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP4947111B2 (ja) * | 2008-12-10 | 2012-06-06 | 株式会社デンソー | 半導体装置の製造方法 |
US8507352B2 (en) | 2008-12-10 | 2013-08-13 | Denso Corporation | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode |
TWI473270B (zh) * | 2009-05-15 | 2015-02-11 | 尼克森微電子股份有限公司 | 半導體元件及其製造方法 |
JP2011023527A (ja) * | 2009-07-15 | 2011-02-03 | Toshiba Corp | 半導体装置 |
JP2011049393A (ja) * | 2009-08-27 | 2011-03-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR101058593B1 (ko) * | 2009-09-08 | 2011-08-22 | 삼성전기주식회사 | 반도체 소자 및 그 제조 방법 |
JP5526811B2 (ja) * | 2010-01-29 | 2014-06-18 | 富士電機株式会社 | 逆導通形絶縁ゲート型バイポーラトランジスタ |
JP5721339B2 (ja) * | 2010-04-01 | 2015-05-20 | 三菱電機株式会社 | 半導体装置 |
GB2479372B (en) * | 2010-04-07 | 2013-07-24 | Ge Aviat Systems Ltd | Power switches for aircraft |
WO2011129443A1 (ja) * | 2010-04-15 | 2011-10-20 | 富士電機株式会社 | 半導体装置 |
CN102064199A (zh) * | 2010-11-23 | 2011-05-18 | 哈尔滨工程大学 | 自对准内嵌肖特基结的功率半导体场效应晶体管 |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
WO2013073623A1 (ja) * | 2011-11-15 | 2013-05-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN104380470B (zh) * | 2012-05-18 | 2018-01-02 | 富士电机株式会社 | 半导体装置 |
US9281359B2 (en) * | 2012-08-20 | 2016-03-08 | Infineon Technologies Ag | Semiconductor device comprising contact trenches |
CN104285298A (zh) * | 2012-09-13 | 2015-01-14 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP2015041638A (ja) * | 2013-08-20 | 2015-03-02 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
CN104576716B (zh) * | 2013-10-24 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | 集成超势垒整流器的igbt器件及制造方法 |
US9818837B2 (en) * | 2014-12-10 | 2017-11-14 | Semiconductor Components Industries, Llc | Process of forming an electronic device having an electronic component |
WO2016112047A1 (en) * | 2015-01-05 | 2016-07-14 | Maxpower Semiconductor, Inc. | Reverse-conducting gated-base bipolar-conduction devices and methods with reduced risk of warping |
US9780206B2 (en) | 2015-02-27 | 2017-10-03 | Purdue Research Foundation | Methods of reducing the electrical and thermal resistance of SiC substrates and devices made thereby |
WO2016207940A1 (ja) * | 2015-06-22 | 2016-12-29 | オリンパス株式会社 | 内視鏡用撮像装置 |
CN105161530B (zh) * | 2015-08-21 | 2018-05-18 | 中国东方电气集团有限公司 | 具有自适应性的场截止电流控制型功率器件 |
JP2019016738A (ja) * | 2017-07-10 | 2019-01-31 | トヨタ自動車株式会社 | 半導体装置 |
CN110419111B (zh) | 2018-01-16 | 2023-08-15 | 艾鲍尔半导体 | 自对准且稳健的绝缘栅双极晶体管器件 |
US20190245070A1 (en) * | 2018-02-07 | 2019-08-08 | Ipower Semiconductor | Igbt devices with 3d backside structures for field stop and reverse conduction |
US10546948B1 (en) | 2018-09-11 | 2020-01-28 | Semiconductor Components Industries, Llc | Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same |
US11764209B2 (en) * | 2020-10-19 | 2023-09-19 | MW RF Semiconductors, LLC | Power semiconductor device with forced carrier extraction and method of manufacture |
CN112951905B (zh) * | 2021-01-25 | 2024-03-29 | 南瑞联研半导体有限责任公司 | 一种SiC逆导型绝缘栅双极型晶体管器件及其制造方法 |
Family Cites Families (23)
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US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
JPH0828506B2 (ja) * | 1988-11-07 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH04192474A (ja) | 1990-11-26 | 1992-07-10 | Sharp Corp | 太陽電池の製造方法 |
JP2689047B2 (ja) * | 1991-07-24 | 1997-12-10 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタとその製造方法 |
JPH05190831A (ja) * | 1992-01-16 | 1993-07-30 | Nissan Motor Co Ltd | ガードリング |
JP3124611B2 (ja) * | 1992-01-16 | 2001-01-15 | 日本碍子株式会社 | Mosアノードショート補助ゲート構造を有する半導体素子 |
JP2950025B2 (ja) * | 1992-07-02 | 1999-09-20 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JPH06350109A (ja) * | 1993-06-10 | 1994-12-22 | Nec Corp | Pin構造半導体装置 |
JPH08213292A (ja) | 1995-02-02 | 1996-08-20 | Hitachi Ltd | 半導体基板及びその製造方法 |
JP2989113B2 (ja) * | 1995-02-20 | 1999-12-13 | ローム株式会社 | 半導体装置およびその製法 |
JP3413021B2 (ja) * | 1996-07-30 | 2003-06-03 | 株式会社東芝 | 半導体装置 |
JP4167313B2 (ja) * | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
JPH1131208A (ja) | 1997-05-15 | 1999-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 半導体チップおよびその製造方法 |
US6104062A (en) * | 1998-06-30 | 2000-08-15 | Intersil Corporation | Semiconductor device having reduced effective substrate resistivity and associated methods |
JP2000040833A (ja) * | 1998-07-23 | 2000-02-08 | Mitsubishi Materials Corp | 半導体装置の製造方法 |
JP2000260670A (ja) | 1999-03-05 | 2000-09-22 | Mitsubishi Materials Corp | シリコンウェーハ及びその製造方法 |
US6162702A (en) | 1999-06-17 | 2000-12-19 | Intersil Corporation | Self-supported ultra thin silicon wafer process |
JP3860705B2 (ja) * | 2000-03-31 | 2006-12-20 | 新電元工業株式会社 | 半導体装置 |
JP2002016266A (ja) * | 2000-06-28 | 2002-01-18 | Sankosha Corp | 半導体素子とその製造方法 |
JP2002076326A (ja) * | 2000-09-04 | 2002-03-15 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
RU2276429C2 (ru) * | 2000-09-21 | 2006-05-10 | Кембридж Семикондактор Лимитед | Полупроводниковое устройство и способ формирования полупроводникового устройства |
JP2002170963A (ja) * | 2000-12-01 | 2002-06-14 | Sanken Electric Co Ltd | 半導体素子、半導体装置、及び半導体素子の製造方法 |
JP4292964B2 (ja) * | 2003-08-08 | 2009-07-08 | 三菱電機株式会社 | 縦型半導体装置 |
-
2003
- 2003-01-20 WO PCT/JP2003/000443 patent/WO2004066391A1/ja not_active Application Discontinuation
- 2003-07-11 JP JP2004544176A patent/JPWO2004066394A1/ja active Pending
- 2003-07-11 EP EP03741371A patent/EP1601020B1/de not_active Expired - Lifetime
- 2003-07-11 WO PCT/JP2003/008869 patent/WO2004066394A1/ja active Application Filing
- 2003-07-11 CN CNB038064294A patent/CN100414713C/zh not_active Expired - Fee Related
- 2003-07-11 KR KR1020047014332A patent/KR100697770B1/ko not_active IP Right Cessation
- 2003-07-11 DE DE60332500T patent/DE60332500D1/de not_active Expired - Lifetime
- 2003-07-11 US US10/505,179 patent/US20050156283A1/en not_active Abandoned
- 2003-09-05 TW TW092124557A patent/TWI241634B/zh active
-
2006
- 2006-11-20 US US11/561,823 patent/US7635892B2/en not_active Expired - Fee Related
-
2009
- 2009-10-16 US US12/580,303 patent/US20100038707A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN100414713C (zh) | 2008-08-27 |
JPWO2004066394A1 (ja) | 2006-05-18 |
EP1601020A1 (de) | 2005-11-30 |
EP1601020A4 (de) | 2008-01-02 |
TWI241634B (en) | 2005-10-11 |
CN1643698A (zh) | 2005-07-20 |
US20100038707A1 (en) | 2010-02-18 |
TW200425275A (en) | 2004-11-16 |
KR100697770B1 (ko) | 2007-03-20 |
EP1601020B1 (de) | 2010-05-05 |
WO2004066391A1 (ja) | 2004-08-05 |
US7635892B2 (en) | 2009-12-22 |
KR20040095284A (ko) | 2004-11-12 |
US20070075332A1 (en) | 2007-04-05 |
US20050156283A1 (en) | 2005-07-21 |
WO2004066394A1 (ja) | 2004-08-05 |
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