DE102005024684A8 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number: DE102005024684A8
Authority: DE; Germany
Prior art keywords: semiconductor device; semiconductor
Prior art date: 2004-09-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

DE102005024684A

Other languages

English (en)

Other versions

DE102005024684A1 (de

DE102005024684B4 (de

Inventor

Takasumi Ohyanagi

Atsuo Watanabe

Rajesh Kumar Malhan

Tsuyoshi Yamamoto

Toshiyuki Morishita

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Power Semiconductor Device Ltd

Denso Corp

Original Assignee

Hitachi Ltd

Denso Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-09-21

Filing date

2005-05-30

Publication date

2013-11-21

2005-05-30 Application filed by Hitachi Ltd, Denso Corp filed Critical Hitachi Ltd

2006-03-30 Publication of DE102005024684A1 publication Critical patent/DE102005024684A1/de

2013-11-21 Publication of DE102005024684A8 publication Critical patent/DE102005024684A8/de

2015-04-16 Application granted granted Critical

2015-04-16 Publication of DE102005024684B4 publication Critical patent/DE102005024684B4/de

Status Expired - Fee Related legal-status Critical Current

2025-05-31 Anticipated expiration legal-status Critical

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide

DE102005024684.2A 2004-09-21 2005-05-30 Halbleitervorrichtung Expired - Fee Related DE102005024684B4 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2004-272955		2004-09-21
JP2004272955A JP4777630B2 (ja)	2004-09-21	2004-09-21	半導体装置

Publications (3)

Publication Number	Publication Date
DE102005024684A1 DE102005024684A1 (de)	2006-03-30
DE102005024684A8 true DE102005024684A8 (de)	2013-11-21
DE102005024684B4 DE102005024684B4 (de)	2015-04-16

Family

ID=36011750

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE102005024684.2A Expired - Fee Related DE102005024684B4 (de)	2004-09-21	2005-05-30	Halbleitervorrichtung

Country Status (3)

Country	Link
US (2)	US7230283B2 (de)
JP (1)	JP4777630B2 (de)
DE (1)	DE102005024684B4 (de)

Families Citing this family (34)

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JP4935160B2 (ja) *	2006-04-11	2012-05-23	株式会社デンソー	炭化珪素半導体装置およびその製造方法
JP2008016747A (ja)	2006-07-10	2008-01-24	Fuji Electric Holdings Co Ltd	トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
US7728402B2 (en) *	2006-08-01	2010-06-01	Cree, Inc.	Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en)	2006-08-01	2013-04-30	Cree, Inc.	Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
KR101529331B1 (ko) *	2006-08-17	2015-06-16	크리 인코포레이티드	고전력 절연 게이트 바이폴라 트랜지스터
EP1930952A1 (de) *	2006-12-05	2008-06-11	Siemens Aktiengesellschaft	Vertikale Halbleiterstruktur und Herstellungsverfahren
US8835987B2 (en) *	2007-02-27	2014-09-16	Cree, Inc.	Insulated gate bipolar transistors including current suppressing layers
US7648898B2 (en) *	2008-02-19	2010-01-19	Dsm Solutions, Inc.	Method to fabricate gate electrodes
US8232558B2 (en)	2008-05-21	2012-07-31	Cree, Inc.	Junction barrier Schottky diodes with current surge capability
US8188538B2 (en)	2008-12-25	2012-05-29	Rohm Co., Ltd.	Semiconductor device and method of manufacturing semiconductor device
US8294507B2 (en)	2009-05-08	2012-10-23	Cree, Inc.	Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en)	2009-06-02	2012-06-05	Cree, Inc.	Power switching devices having controllable surge current capabilities
US8629509B2 (en) *	2009-06-02	2014-01-14	Cree, Inc.	High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) *	2009-07-15	2013-09-24	Cree, Inc.	High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en)	2009-08-31	2013-01-15	Cree, Inc.	Solid-state pinch off thyristor circuits
JP5452195B2 (ja) *	2009-12-03	2014-03-26	株式会社日立パワーデバイス	半導体装置及びそれを用いた電力変換装置
JP5585646B2 (ja) *	2010-03-04	2014-09-10	独立行政法人産業技術総合研究所	ノーマリーオフ型埋め込みゲート型炭化珪素静電誘導トランジスタの設計方法、ノーマリーオフ型埋め込みゲート型炭化珪素静電誘導トランジスタおよびその製造方法
US9117739B2 (en)	2010-03-08	2015-08-25	Cree, Inc.	Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en)	2010-04-16	2013-04-09	Cree, Inc.	Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en)	2011-05-06	2015-09-22	Cree, Inc.	Field effect transistor devices with low source resistance
US9029945B2 (en)	2011-05-06	2015-05-12	Cree, Inc.	Field effect transistor devices with low source resistance
US8664665B2 (en)	2011-09-11	2014-03-04	Cree, Inc.	Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en)	2011-09-11	2016-06-21	Cree, Inc.	High current, low switching loss SiC power module
US8680587B2 (en)	2011-09-11	2014-03-25	Cree, Inc.	Schottky diode
CN103918079B (zh)	2011-09-11	2017-10-31	科锐	包括具有改进布局的晶体管的高电流密度功率模块
US8618582B2 (en)	2011-09-11	2013-12-31	Cree, Inc.	Edge termination structure employing recesses for edge termination elements
US9640617B2 (en)	2011-09-11	2017-05-02	Cree, Inc.	High performance power module
EP2602829A1 (de) *	2011-12-07	2013-06-12	Nxp B.V.	Trench-Gate-RESURF-Halbleitervorrichtung und Herstellungsverfahren
JP2013201190A (ja) *	2012-03-23	2013-10-03	Toshiba Corp	接合形電界効果トランジスタ及びその製造方法
US10056499B2 (en) *	2016-09-01	2018-08-21	Semiconductor Components Industries, Llc	Bidirectional JFET and a process of forming the same
US10269955B2 (en) *	2017-01-17	2019-04-23	Cree, Inc.	Vertical FET structure
JP6905395B2 (ja) *	2017-06-16	2021-07-21	株式会社東芝	半導体装置
US11164979B1 (en) *	2020-08-06	2021-11-02	Vanguard International Semiconductor Corporation	Semiconductor device
KR102630457B1 (ko) *	2022-03-11	2024-01-29	누보톤 테크놀로지 재팬 가부시키가이샤	반도체 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2820913A1 (de) *	1977-05-15	1978-11-23	Zaidan Hojin Handotai Kenkyu	Integrierte halbleitervorrichtung
EP0698926B1 (de) *	1994-08-26	2000-10-25	Ngk Insulators, Ltd.	Im Normalzustand abgeschalteter statischer Induktionsthyristor

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JPS5918870B2 (ja) *	1977-05-15	1984-05-01	財団法人半導体研究振興会	半導体集積回路
JPH04276664A (ja) *	1991-03-04	1992-10-01	Toyota Central Res & Dev Lab Inc	静電誘導形半導体装置
US5396085A (en)	1993-12-28	1995-03-07	North Carolina State University	Silicon carbide switching device with rectifying-gate
JPH10125934A (ja) *	1996-10-22	1998-05-15	Meidensha Corp	Ｓｉトランジスタ
JP2004134547A (ja) *	2002-10-10	2004-04-30	Hitachi Ltd	半導体装置
JP4179139B2 (ja) *	2003-11-14	2008-11-12	株式会社デンソー	炭化珪素半導体装置およびその製造方法

2004
- 2004-09-21 JP JP2004272955A patent/JP4777630B2/ja not_active Expired - Fee Related
2005
- 2005-05-27 US US11/138,298 patent/US7230283B2/en not_active Expired - Fee Related
- 2005-05-30 DE DE102005024684.2A patent/DE102005024684B4/de not_active Expired - Fee Related
2007
- 2007-05-25 US US11/802,810 patent/US7335928B2/en not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2820913A1 (de) *	1977-05-15	1978-11-23	Zaidan Hojin Handotai Kenkyu	Integrierte halbleitervorrichtung
EP0698926B1 (de) *	1994-08-26	2000-10-25	Ngk Insulators, Ltd.	Im Normalzustand abgeschalteter statischer Induktionsthyristor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WILAMOWSKI, B. M.: "Static Induction Devices". In: Power Electronics Handbook edited by Muhammad H. Rashid, Academic Press, 2001, S. 127-137. Kapitel 9. *

Also Published As

Publication number	Publication date
US7335928B2 (en)	2008-02-26
DE102005024684A1 (de)	2006-03-30
US20060060884A1 (en)	2006-03-23
DE102005024684B4 (de)	2015-04-16
JP4777630B2 (ja)	2011-09-21
US7230283B2 (en)	2007-06-12
JP2006093186A (ja)	2006-04-06
US20070221924A1 (en)	2007-09-27

Legal Events

Date	Code	Title	Description
2006-03-30	OP8	Request for examination as to paragraph 44 patent law
2011-12-20	R002	Refusal decision in examination/registration proceedings
2012-03-02	R006	Appeal filed
2012-05-14	R008	Case pending at federal patent court
2013-09-26	R082	Change of representative	Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE
2014-06-23	R082	Change of representative	Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE
2014-07-31	R081	Change of applicant/patentee	Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD., HITA, JP Free format text: FORMER OWNER: HITACHI , LTD., DENSO CORPORATION, , JP Effective date: 20140623 Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD., HITA, JP Free format text: FORMER OWNERS: HITACHI, LTD., TOKIO/TOKYO, JP; DENSO CORPORATION, KARIYA-CITY, AICHI-PREF., JP Effective date: 20140623 Owner name: DENSO CORPORATION, KARIYA-CITY, JP Free format text: FORMER OWNERS: HITACHI, LTD., TOKIO/TOKYO, JP; DENSO CORPORATION, KARIYA-CITY, AICHI-PREF., JP Effective date: 20140623 Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD., HITA, JP Free format text: FORMER OWNERS: HITACHI , LTD., TOKIO/TOKYO, JP; DENSO CORPORATION, KARIYA-CITY, AICHI-PREF., JP Effective date: 20140623 Owner name: DENSO CORPORATION, KARIYA-CITY, JP Free format text: FORMER OWNERS: HITACHI , LTD., TOKIO/TOKYO, JP; DENSO CORPORATION, KARIYA-CITY, AICHI-PREF., JP Effective date: 20140623 Owner name: DENSO CORPORATION, KARIYA-CITY, JP Free format text: FORMER OWNER: HITACHI, LTD., TOKYO, JP Effective date: 20130926 Owner name: DENSO CORPORATION, KARIYA-CITY, JP Free format text: FORMER OWNER: HITACHI , LTD., DENSO CORPORATION, , JP Effective date: 20140623 Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD., HITA, JP Free format text: FORMER OWNER: HITACHI, LTD., TOKYO, JP Effective date: 20130926
2014-07-31	R082	Change of representative	Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE Effective date: 20140623 Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE Effective date: 20130926 Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE Effective date: 20130926 Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE Effective date: 20140623
2015-03-10	R019	Grant decision by federal patent court
2016-01-19	R020	Patent grant now final
2021-12-01	R119	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Publication	Publication Date	Title
DE102005024684A8 (de)	2013-11-21	Halbleitervorrichtung
DE602004005760D1 (de)	2007-05-24	Halbleitervorrichtung
DE602005009411D1 (de)	2008-10-16	Halbleiterspeichervorrichtung
DE60332500D1 (de)	2010-06-17	Halbleitervorrichtung
DE602005012730D1 (de)	2009-03-26	Lk-kommunikationsgerät
DE602005016187D1 (de)	2009-10-08	Staubreduzierende Einrichtung
DE602005002797D1 (de)	2007-11-22	Tragvorrichtung
DE602005006197D1 (de)	2008-06-05	Halbleiterspeicherbaustein
DE602007013318D1 (de)	2011-05-05	Halbleiterbauelement
DE602004032509D1 (de)	2011-06-16	Photovoltaisches Bauelement
DE602007013972D1 (de)	2011-06-01	Halbleiterbauelement
DE602007002105D1 (de)	2009-10-08	Halbleiterbauelement
DE602005018257D1 (de)	2010-01-21	Frequenzumsetzungsvorrichtung
DK1831626T3 (da)	2014-11-10	Køleindretning
DE602006012106D1 (de)	2010-03-25	Halbleiteranordnung
DE502005001883D1 (de)	2007-12-20	Anschlussvorrichtung
DE602005002678D1 (de)	2007-11-15	Anschlussvorrichtung
DE502005001288D1 (de)	2007-10-04	Anhaltevorrichtung
DE112005003806A5 (de)	2008-09-25	Halbleiterlaservorrichtung
ITTO20040595A1 (it)	2004-12-09	Dispositivo a semiconduttore
FI20055057A0 (fi)	2005-02-08	Puolijohdelaite
DE502005008087D1 (de)	2009-10-22	Verbindungsvorrichtung
SE0600938L (sv)	2006-06-13	Storleksreducerande anordning
DE502005001290D1 (de)	2007-10-04	Verbindungsvorrichtung
DE602005012509D1 (de)	2009-03-12	Kegelspielvorrichtung