DE60311422D1 - Halbleiterlaserdiodenvorrichtung - Google Patents
HalbleiterlaserdiodenvorrichtungInfo
- Publication number
- DE60311422D1 DE60311422D1 DE60311422T DE60311422T DE60311422D1 DE 60311422 D1 DE60311422 D1 DE 60311422D1 DE 60311422 T DE60311422 T DE 60311422T DE 60311422 T DE60311422 T DE 60311422T DE 60311422 D1 DE60311422 D1 DE 60311422D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser diode
- diode assembly
- assembly
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003014614 | 2003-03-08 | ||
KR1020030014614A KR100964399B1 (ko) | 2003-03-08 | 2003-03-08 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60311422D1 true DE60311422D1 (de) | 2007-03-15 |
DE60311422T2 DE60311422T2 (de) | 2007-10-18 |
Family
ID=32906595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60311422T Expired - Lifetime DE60311422T2 (de) | 2003-03-08 | 2003-12-23 | Halbleiterlaserdiodenvorrichtung |
Country Status (6)
Country | Link |
---|---|
US (2) | US7180927B2 (de) |
EP (1) | EP1469569B1 (de) |
JP (1) | JP2004274058A (de) |
KR (1) | KR100964399B1 (de) |
CN (1) | CN100421320C (de) |
DE (1) | DE60311422T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
US7773330B2 (en) * | 2005-04-15 | 2010-08-10 | Seagate Technology Llc | Apparatus for excitation, enhancement, and confinement of surface electromagnetic waves for confined optical power delivery |
KR101100425B1 (ko) * | 2005-05-07 | 2011-12-30 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
JP2007103460A (ja) * | 2005-09-30 | 2007-04-19 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
US7643248B2 (en) * | 2006-06-30 | 2010-01-05 | Seagate Technology Llc | Optoelectronic emitter mounted on a slider |
EP1906496B1 (de) * | 2006-09-29 | 2010-01-06 | OSRAM Opto Semiconductors GmbH | Halbleiterlaser und Verfahren zur Herstellung eines solchen |
TWI502768B (zh) * | 2009-12-31 | 2015-10-01 | Epistar Corp | 光電半導體裝置及其製造方法 |
JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
US8451695B2 (en) | 2011-06-23 | 2013-05-28 | Seagate Technology Llc | Vertical cavity surface emitting laser with integrated mirror and waveguide |
US20130322481A1 (en) * | 2012-05-31 | 2013-12-05 | Rajaram Bhat | Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets |
US9107316B2 (en) * | 2013-09-11 | 2015-08-11 | Eastman Kodak Company | Multi-layer micro-wire substrate structure |
CN104538844B (zh) * | 2015-01-27 | 2018-10-26 | 中国科学院上海微***与信息技术研究所 | 太赫兹量子级联激光器器件结构及其制作方法 |
JP6654503B2 (ja) * | 2016-05-02 | 2020-02-26 | 日本電信電話株式会社 | 光半導体素子および半導体モノリシック型光回路 |
WO2023276624A1 (ja) * | 2021-06-30 | 2023-01-05 | 京セラ株式会社 | 発光体、発光体の製造方法および製造装置、発光素子およびその製造方法、並びに電子機器 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52116185A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Mesa-type semiconductor laser |
US5022036A (en) * | 1988-12-29 | 1991-06-04 | Sharp Kabushiki Kaisha | Semiconductor laser device |
JP2892053B2 (ja) | 1989-10-30 | 1999-05-17 | 株式会社リコー | 半導体発光素子アレイ |
EP0426419B1 (de) * | 1989-10-31 | 1997-09-10 | The Furukawa Electric Co., Ltd. | Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung |
US5536085A (en) * | 1995-03-30 | 1996-07-16 | Northern Telecom Limited | Multi-wavelength gain-coupled distributed feedback laser array with fine tunability |
JP3342322B2 (ja) * | 1996-11-27 | 2002-11-05 | シャープ株式会社 | Led素子表示装置の製造方法 |
US6185238B1 (en) * | 1997-02-21 | 2001-02-06 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor laser and its manufacturing method |
US5936994A (en) * | 1997-09-18 | 1999-08-10 | Northern Telecom Limited | Two-section complex coupled distributed feedback semiconductor laser with enhanced wavelength tuning range |
US20020028390A1 (en) | 1997-09-22 | 2002-03-07 | Mohammad A. Mazed | Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures |
US5917847A (en) * | 1997-09-26 | 1999-06-29 | Xerox Corporation | Independently addressable semiconductor laser arrays with buried selectively oxidized native oxide apertures |
TW417320B (en) * | 1998-06-18 | 2001-01-01 | Ind Tech Res Inst | Self-aligned method for fabricating a ridge-waveguide semiconductor laser diode |
JP3348024B2 (ja) * | 1998-08-17 | 2002-11-20 | 松下電器産業株式会社 | 半導体レーザ装置 |
JP2000208871A (ja) | 1999-01-19 | 2000-07-28 | Oki Electric Ind Co Ltd | 導波路型光素子,導波路型光素子の製造方法,光モジュ―ル,及び光モジュ―ルの製造方法 |
US7212556B1 (en) * | 1999-02-17 | 2007-05-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device optical disk apparatus and optical integrated unit |
AU1762601A (en) * | 1999-11-12 | 2001-06-06 | John C. Connolly | Control of current spreading in semiconductor laser diodes |
US6757313B1 (en) * | 1999-11-12 | 2004-06-29 | Trumpf Photonics Inc. | Control of current spreading in semiconductor laser diodes |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
JP2001168442A (ja) | 1999-12-07 | 2001-06-22 | Sony Corp | 半導体レーザ素子の製造方法、配設基板および支持基板 |
JP2001251018A (ja) * | 2000-03-03 | 2001-09-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体レーザ |
CN1251372C (zh) * | 2000-06-08 | 2006-04-12 | 日亚化学工业株式会社 | 半导体激光元件及其制造方法 |
JP2002171021A (ja) * | 2000-11-30 | 2002-06-14 | Toshiba Corp | 半導体レーザ、半導体レーザの製造方法および半導体レーザの実装方法 |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
JP3889933B2 (ja) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | 半導体発光装置 |
JP2003008143A (ja) | 2001-06-18 | 2003-01-10 | Sony Corp | マルチビーム半導体レーザ素子 |
JP2002111137A (ja) | 2001-07-13 | 2002-04-12 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子 |
JP2003069153A (ja) | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 半導体光デバイス及び集積型光半導体装置 |
JP4131623B2 (ja) * | 2001-09-12 | 2008-08-13 | 三洋電機株式会社 | 電極構造およびその製造方法 |
JP3786000B2 (ja) * | 2001-12-14 | 2006-06-14 | 日亜化学工業株式会社 | 窒化物半導体レーザダイオードとその製造方法 |
JP3924756B2 (ja) * | 2002-01-21 | 2007-06-06 | 松下電器産業株式会社 | 窒化物半導体レーザ素子の製造方法 |
JP2003264334A (ja) * | 2002-03-08 | 2003-09-19 | Hitachi Ltd | 半導体レーザ素子及び半導体レーザモジュール |
DE10219886B4 (de) | 2002-05-03 | 2007-10-04 | Chunghwa Telecom Co.Ltd. | Selbstjustierendes Verfahren zur Herstellung eines Stegwellenleiter-Halbleiterlasers |
JP2003332676A (ja) * | 2002-05-08 | 2003-11-21 | Mitsubishi Electric Corp | 半導体光装置 |
JP2004014938A (ja) * | 2002-06-10 | 2004-01-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4480948B2 (ja) * | 2002-07-15 | 2010-06-16 | 日本オプネクスト株式会社 | 半導体レーザ素子及びその製造方法 |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
KR100958054B1 (ko) * | 2003-03-08 | 2010-05-13 | 삼성전자주식회사 | 반도체 레이저 다이오드의 서브 마운트, 그 제조방법 및이를 채용한 반도체 레이저 다이오드 조립체 |
KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
KR20040092764A (ko) * | 2003-04-29 | 2004-11-04 | 삼성전자주식회사 | 자기정렬을 이용한 반도체 레이저 다이오드 및 그 제조방법 |
TWI347054B (en) * | 2003-07-11 | 2011-08-11 | Nichia Corp | Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device |
US7250631B2 (en) * | 2003-10-14 | 2007-07-31 | Nichia Corporation | Semiconductor laser having protruding portion |
US7408199B2 (en) * | 2004-04-02 | 2008-08-05 | Nichia Corporation | Nitride semiconductor laser device and nitride semiconductor device |
JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
KR20060115453A (ko) * | 2005-05-06 | 2006-11-09 | 삼성전자주식회사 | 방열 구조체 및 이를 구비한 발광소자 조립체 |
KR101100425B1 (ko) * | 2005-05-07 | 2011-12-30 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
US9153645B2 (en) * | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
JPWO2007135772A1 (ja) * | 2006-05-19 | 2009-10-01 | 日本電気株式会社 | 発光素子 |
-
2003
- 2003-03-08 KR KR1020030014614A patent/KR100964399B1/ko active IP Right Grant
- 2003-12-11 US US10/732,240 patent/US7180927B2/en active Active
- 2003-12-23 DE DE60311422T patent/DE60311422T2/de not_active Expired - Lifetime
- 2003-12-23 EP EP03258213A patent/EP1469569B1/de not_active Expired - Lifetime
- 2003-12-30 CN CNB2003101243426A patent/CN100421320C/zh not_active Expired - Lifetime
-
2004
- 2004-03-05 JP JP2004062196A patent/JP2004274058A/ja active Pending
-
2007
- 2007-01-09 US US11/650,991 patent/US20070110113A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070110113A1 (en) | 2007-05-17 |
JP2004274058A (ja) | 2004-09-30 |
US7180927B2 (en) | 2007-02-20 |
DE60311422T2 (de) | 2007-10-18 |
EP1469569B1 (de) | 2007-01-24 |
CN1527451A (zh) | 2004-09-08 |
EP1469569A3 (de) | 2005-07-27 |
KR100964399B1 (ko) | 2010-06-17 |
EP1469569A2 (de) | 2004-10-20 |
US20040174918A1 (en) | 2004-09-09 |
KR20040079636A (ko) | 2004-09-16 |
CN100421320C (zh) | 2008-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60324962D1 (de) | Halbleiterlaseranordnung | |
DE60311095D1 (de) | Mehrstrahliger halbleiterlaser | |
DE60101418D1 (de) | Halbleiterlaserdiodenmodul | |
DE60239445D1 (de) | Halbleiterlaserstruktur | |
DE60318611D1 (de) | Lichtemittierende Diode | |
DE50307780D1 (de) | Optoelektronisches bauelement | |
DE60227232D1 (de) | Halbleiterlaserstruktur | |
DE60317905D1 (de) | Halbleiterbauelement | |
DE60224273D1 (de) | Mehrstrahl-halbleiterlaserelement | |
DE60215892D1 (de) | Zwei-dimensionaler Vielfachdiodenlaser | |
DE602004028430D1 (de) | Halbleiter | |
DE60313877D1 (de) | Halbleiterlasermodul mit verbesserter wellenlängenstabilität | |
DE602005014591D1 (de) | Diodengepumpter Laser | |
DE60313777D1 (de) | Optisches halbleiterbauelement | |
DE60121416D1 (de) | Diodenlasermodul | |
DE60322991D1 (de) | Diodeanordnung | |
DE10238843B8 (de) | Halbleiterbauelement | |
DE50313066D1 (de) | Optisch gepumpte halbleiterlaservorrichtung | |
DE60311422D1 (de) | Halbleiterlaserdiodenvorrichtung | |
DE50306271D1 (de) | Halbleiterlaservorrichtung | |
DE112004002671D2 (de) | Diode | |
FR2854496B1 (fr) | Boitier semi-conducteur | |
DE60222724D1 (de) | Halbleiterlaserelement | |
DE60212902D1 (de) | Hochleistungshalbleiterdiodenlaser | |
DE502004008051D1 (de) | Optisch gepumpte halbleiterlaservorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |