DE60222532D1 - Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren - Google Patents
Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahrenInfo
- Publication number
- DE60222532D1 DE60222532D1 DE60222532T DE60222532T DE60222532D1 DE 60222532 D1 DE60222532 D1 DE 60222532D1 DE 60222532 T DE60222532 T DE 60222532T DE 60222532 T DE60222532 T DE 60222532T DE 60222532 D1 DE60222532 D1 DE 60222532D1
- Authority
- DE
- Germany
- Prior art keywords
- cleaning
- cleaning solution
- chemical
- composition
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 abstract 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 229960005070 ascorbic acid Drugs 0.000 abstract 1
- 235000010323 ascorbic acid Nutrition 0.000 abstract 1
- 239000011668 ascorbic acid Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 229940074391 gallic acid Drugs 0.000 abstract 1
- 235000004515 gallic acid Nutrition 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- -1 monoethylanolamine Chemical compound 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3254—Esters or carbonates thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/781,859 US6723691B2 (en) | 1999-11-16 | 2001-02-12 | Post chemical-mechanical planarization (CMP) cleaning composition |
US781859 | 2001-02-12 | ||
PCT/US2002/003422 WO2002065538A2 (en) | 2001-02-12 | 2002-02-06 | Post chemical-mechanical planarization (cmp) cleaning composition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60222532D1 true DE60222532D1 (de) | 2007-10-31 |
DE60222532T2 DE60222532T2 (de) | 2008-05-29 |
Family
ID=25124179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60222532T Expired - Lifetime DE60222532T2 (de) | 2001-02-12 | 2002-02-06 | Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US6723691B2 (de) |
EP (2) | EP1845555B8 (de) |
JP (2) | JP2004518819A (de) |
AT (1) | ATE373873T1 (de) |
DE (1) | DE60222532T2 (de) |
TW (1) | TWI299885B (de) |
WO (1) | WO2002065538A2 (de) |
Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6310019B1 (en) * | 2000-07-05 | 2001-10-30 | Wako Pure Chemical Industries, Ltd. | Cleaning agent for a semi-conductor substrate |
US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
US20030119692A1 (en) * | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
CN1639846A (zh) * | 2002-01-28 | 2005-07-13 | 三菱化学株式会社 | 半导体器件用基板的清洗液及清洗方法 |
JP4221191B2 (ja) | 2002-05-16 | 2009-02-12 | 関東化学株式会社 | Cmp後洗浄液組成物 |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
JP4085262B2 (ja) * | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
TWI264620B (en) * | 2003-03-07 | 2006-10-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP2005075924A (ja) * | 2003-08-29 | 2005-03-24 | Neos Co Ltd | シリカスケール除去剤 |
WO2005066325A2 (en) * | 2003-12-31 | 2005-07-21 | Ekc Technology, Inc. | Cleaner compositions containing free radical quenchers |
KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
US20050247675A1 (en) * | 2004-05-04 | 2005-11-10 | Texas Instruments Incorporated | Treatment of dies prior to nickel silicide formation |
KR20050110470A (ko) * | 2004-05-19 | 2005-11-23 | 테크노세미켐 주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
JP2006016438A (ja) * | 2004-06-30 | 2006-01-19 | Dongwoo Fine-Chem Co Ltd | 電子部品洗浄液 |
US7718009B2 (en) * | 2004-08-30 | 2010-05-18 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
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KR20060075315A (ko) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조용 구리 화합물 이물질 제거를 위한 세정방법 |
US20060148666A1 (en) * | 2004-12-30 | 2006-07-06 | Advanced Technology Materials Inc. | Aqueous cleaner with low metal etch rate |
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CN101180379B (zh) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 |
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CN101233456B (zh) * | 2005-06-07 | 2013-01-02 | 高级技术材料公司 | 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物 |
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KR101833158B1 (ko) * | 2007-05-17 | 2018-02-27 | 엔테그리스, 아이엔씨. | Cmp후 세정 제제용 신규한 항산화제 |
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JP5646882B2 (ja) * | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
JP5702075B2 (ja) * | 2010-03-26 | 2015-04-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 銅配線半導体用洗浄剤 |
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- 2002-02-06 JP JP2002564755A patent/JP2004518819A/ja not_active Withdrawn
- 2002-02-06 DE DE60222532T patent/DE60222532T2/de not_active Expired - Lifetime
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- 2002-02-06 EP EP07015166.7A patent/EP1845555B8/de not_active Expired - Lifetime
- 2002-02-06 EP EP02702149A patent/EP1360712B9/de not_active Expired - Lifetime
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DE60222532T2 (de) | 2008-05-29 |
WO2002065538A2 (en) | 2002-08-22 |
WO2002065538A3 (en) | 2003-02-13 |
JP5097640B2 (ja) | 2012-12-12 |
JP2009013417A (ja) | 2009-01-22 |
EP1845555B8 (de) | 2016-06-29 |
EP1360712A2 (de) | 2003-11-12 |
EP1845555A1 (de) | 2007-10-17 |
TWI299885B (en) | 2008-08-11 |
US20010004633A1 (en) | 2001-06-21 |
EP1360712B1 (de) | 2007-09-19 |
ATE373873T1 (de) | 2007-10-15 |
EP1845555B1 (de) | 2015-09-16 |
US6723691B2 (en) | 2004-04-20 |
JP2004518819A (ja) | 2004-06-24 |
EP1360712B9 (de) | 2008-10-29 |
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