SG152961A1 - Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction - Google Patents

Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction

Info

Publication number
SG152961A1
SG152961A1 SG200800910-2A SG2008009102A SG152961A1 SG 152961 A1 SG152961 A1 SG 152961A1 SG 2008009102 A SG2008009102 A SG 2008009102A SG 152961 A1 SG152961 A1 SG 152961A1
Authority
SG
Singapore
Prior art keywords
alpha
amine
compound
polymeric material
hydroxycarbonyl compound
Prior art date
Application number
SG200800910-2A
Inventor
Seiji Inaoka
William Rollins Gemmill
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of SG152961A1 publication Critical patent/SG152961A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3723—Polyamines or polyalkyleneimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C11D2111/22—

Abstract

FLUORIDE-CONTAINING PHOTORESIST STRIPPER OR RESIDUE REMOVING CLEANING COMPOSITIONS CONTAINING CONJUGATE OLIGOMERIC OR POLYMERIC MATERIAL OF ALPHA- HYDROXYCARBONYL COMPOUND/AMINE OR AMMONIA REACTION Semi-aqueous microelectronics cleaning formulations containing: (a) at least one fluoride compound providing fluoride ions, (b) at least one "browned" alpha-hydroxycarbonyl compound that is a oligomeric or polymeric conjugate of a alpha-hydroxycarbonyl compound with an amine or an ammonium compound, and (c) water. Such formulations may also comprise other optional components, including (d) at least one polar, water miscible organic solvent, (e) at least one metal ion-free base at sufficient amounts to produce a final composition of pH, 7 or above, preferably a pH of about 9.5 to about 10.8, and one or more of (f) a polyhydric alcohol and (g) a surfactant. Such compositions are useful to clean microelectronic devices without any significant corrosion of the metal and is compatible with ILDs.
SG200800910-2A 2007-12-06 2008-01-31 Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction SG152961A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99276507P 2007-12-06 2007-12-06

Publications (1)

Publication Number Publication Date
SG152961A1 true SG152961A1 (en) 2009-06-29

Family

ID=40303916

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200800910-2A SG152961A1 (en) 2007-12-06 2008-01-31 Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction

Country Status (6)

Country Link
JP (1) JP2009141310A (en)
KR (1) KR20090060103A (en)
CN (1) CN101452227A (en)
SG (1) SG152961A1 (en)
TW (1) TW200925268A (en)
WO (1) WO2009073588A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009001486A1 (en) * 2009-03-11 2010-09-16 Henkel Ag & Co. Kgaa Biodegradable builders and co-surfactants
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
WO2017023348A1 (en) * 2015-08-06 2017-02-09 Kyzen Corporation Water tolerant solutions and process to remove polymeric soils and clean micro electronic substrates
KR102051346B1 (en) 2016-06-03 2019-12-03 후지필름 가부시키가이샤 Processing liquid, substrate cleaning method and resist removal method
JP6495230B2 (en) * 2016-12-22 2019-04-03 花王株式会社 Rinse agent composition for silicon wafer
TW201912775A (en) * 2017-08-22 2019-04-01 美商富士軟片電子材料美國股份有限公司 Cleaning compositions
US11339302B2 (en) * 2019-09-03 2022-05-24 Nch Corporation Composition and method for removing a coating from a surface
KR102192954B1 (en) * 2020-03-26 2020-12-18 동우 화인켐 주식회사 Composition for cleaning polymer
CN113161234B (en) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 Application of fluorine-containing cleaning liquid composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993016087A2 (en) * 1992-02-13 1993-08-19 Torf Establishment Amadori reaction compounds and products, process for their manufacture, and their use
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
WO1998030667A1 (en) * 1997-01-09 1998-07-16 Advanced Technology Materials, Inc. Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning

Also Published As

Publication number Publication date
TW200925268A (en) 2009-06-16
CN101452227A (en) 2009-06-10
KR20090060103A (en) 2009-06-11
JP2009141310A (en) 2009-06-25
WO2009073588A1 (en) 2009-06-11

Similar Documents

Publication Publication Date Title
SG152961A1 (en) Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
IL173664A (en) Stripping and cleaning compositions for microelectronics
ATE405622T1 (en) AQUEOUS PHOSPHORIC ACID COMPOSITION FOR CLEANING SEMICONDUCTOR DEVICES
IL181106A0 (en) Cleaning compositions for microelectronics substrates
EP1612858A3 (en) Composition for stripping and cleaning and use thereof
ATE367460T1 (en) SEMICONDUCTOR STRIP COMPOSITION CONTAINING 1,3-DICARBONYL COMPOUNDS
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
MY117049A (en) Composition for stripping photoresist and organic materials from substrate surfaces
MY130394A (en) Aqueous stripping and cleaning composition
MY130650A (en) Compositions for removing etching residue and use thereof
DE60323143D1 (en) OVERCRITICAL CARBON DIOXIDE BASED FORMULATION FOR THE REMOVAL OF WHEN ALUMINUM RESTORED AFTER COOKING
TW200834266A (en) Cleaning composition for semiconductor substrates
HK1047063A1 (en) Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
MY143399A (en) Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
ATE488569T1 (en) CLEANING AGENT, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING CONDUCTIVE PATHS ON SEMICONDUCTOR SUBSTRATE
TW200604762A (en) Composition for removing photoresist and/or etching residue from a substrate and use thereof
TW200702435A (en) Phosphonic acid-containing formulation for cleaning semiconductor wafer and cleaning method
TW200705128A (en) Remover compositions
MY144723A (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
TW200627095A (en) Remover composition
SG152960A1 (en) Flouride-free photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
TW200717633A (en) Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method
TW200724649A (en) Composition and method for removing hard mask
TH75925B (en) Cleaning compound for microelectronics substrates
TH84565A (en) Mixture for removal of post-etching residue and residue, ash and photoresist residue.