DE602005017310D1 - Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist - Google Patents

Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist

Info

Publication number
DE602005017310D1
DE602005017310D1 DE602005017310T DE602005017310T DE602005017310D1 DE 602005017310 D1 DE602005017310 D1 DE 602005017310D1 DE 602005017310 T DE602005017310 T DE 602005017310T DE 602005017310 T DE602005017310 T DE 602005017310T DE 602005017310 D1 DE602005017310 D1 DE 602005017310D1
Authority
DE
Germany
Prior art keywords
abnormity
semiconductor manufacturing
manufacturing device
zist
predicting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005017310T
Other languages
English (en)
Inventor
Koichi Sakamoto
Minoru Obata
Noriaki Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004381364A external-priority patent/JP4607576B2/ja
Priority claimed from JP2005031111A external-priority patent/JP4887628B2/ja
Priority claimed from JP2005038413A external-priority patent/JP4607618B2/ja
Priority claimed from JP2005039869A external-priority patent/JP4882239B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE602005017310D1 publication Critical patent/DE602005017310D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0224—Process history based detection method, e.g. whereby history implies the availability of large amounts of data
    • G05B23/0227—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions
    • G05B23/0235—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions based on a comparison with predetermined threshold or range, e.g. "classical methods", carried out during normal operation; threshold adaptation or choice; when or how to compare with the threshold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE602005017310T 2004-12-28 2005-12-22 Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist Active DE602005017310D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004381364A JP4607576B2 (ja) 2004-12-28 2004-12-28 半導体製造装置
JP2005031111A JP4887628B2 (ja) 2005-02-07 2005-02-07 半導体製造装置、コンピュータプログラム及び記憶媒体
JP2005038413A JP4607618B2 (ja) 2005-02-15 2005-02-15 成膜装置、コンピュータプログラム及び記憶媒体
JP2005039869A JP4882239B2 (ja) 2005-02-16 2005-02-16 半導体製造装置、コンピュータプログラム及び記憶媒体
PCT/JP2005/023617 WO2006070689A1 (ja) 2004-12-28 2005-12-22 半導体製造装置、当該半導体製造装置における異常の検出、異常の原因の特定或いは異常の予測を行う方法、並びに当該方法を実施するためのコンピュータプログラムを記録した記憶媒体

Publications (1)

Publication Number Publication Date
DE602005017310D1 true DE602005017310D1 (de) 2009-12-03

Family

ID=36614806

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005017310T Active DE602005017310D1 (de) 2004-12-28 2005-12-22 Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist

Country Status (6)

Country Link
US (1) US7751921B2 (de)
EP (1) EP1845553B1 (de)
KR (1) KR101208295B1 (de)
DE (1) DE602005017310D1 (de)
TW (1) TW200644121A (de)
WO (1) WO2006070689A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123643A (ja) * 2005-10-31 2007-05-17 Matsushita Electric Ind Co Ltd 成膜装置、成膜方法、成膜装置のモニタリングプログラムおよびその記録媒体
JP4796574B2 (ja) * 2006-02-07 2011-10-19 東京エレクトロン株式会社 基板処理装置の制御装置および基板処理装置の制御プログラム
JP4326570B2 (ja) * 2007-04-17 2009-09-09 東京エレクトロン株式会社 ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
US8145337B2 (en) * 2007-05-04 2012-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Methodology to enable wafer result prediction of semiconductor wafer batch processing equipment
CN101330030B (zh) * 2007-06-21 2010-09-29 中芯国际集成电路制造(上海)有限公司 检测数据中异常点的去除方法
US9416448B2 (en) * 2008-08-29 2016-08-16 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
US9297072B2 (en) 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
US9181097B2 (en) * 2009-02-19 2015-11-10 Sundew Technologies, Llc Apparatus and methods for safely providing hazardous reactants
EP2411888A4 (de) * 2009-03-25 2014-05-14 Hewlett Packard Development Co Stromverteilungseinheits-einrichtungskorrelation
FR2981474B1 (fr) * 2011-10-17 2013-12-27 Alstom Technology Ltd Procede de detection preventive d'une panne d'un appareil, programme d'ordinateur, installation et module de detection preventive d'une panne d'un appareil
JP6159536B2 (ja) * 2012-03-05 2017-07-05 株式会社日立国際電気 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム
EP2700920B1 (de) * 2012-08-23 2016-06-22 ams AG Lichtsensorsystem und Verfahren zur Verarbeitung von Lichtsensorsignalen
US9512519B2 (en) 2012-12-03 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition apparatus and method
JP2014194966A (ja) * 2013-03-28 2014-10-09 Tokyo Electron Ltd 処理方法及び処理装置
WO2014177902A1 (en) * 2013-04-30 2014-11-06 Siemens Aktiengesellschaft Method for monitoring a pumping device
JP6262115B2 (ja) 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9766136B2 (en) * 2014-06-09 2017-09-19 Tower Semiconductor Ltd. Apparatus, system and method of detecting leakage in a chamber
JP6151227B2 (ja) * 2014-08-25 2017-06-21 株式会社東芝 異常検知システム及び半導体デバイスの製造方法
EP3043159B1 (de) 2015-01-08 2019-12-18 ams AG Verfahren zur Verarbeitung von Lichtsensorsignalen und Lichtsensorsystem
US20190257685A1 (en) * 2015-06-24 2019-08-22 Kim Lewis Transit Time Ultrasonic Meter Diagnostic System Displays
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
JP6584350B2 (ja) * 2016-03-17 2019-10-02 東京エレクトロン株式会社 制御装置、基板処理システム、基板処理方法及びプログラム
JP6645993B2 (ja) 2016-03-29 2020-02-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 処理装置、装置管理コントローラ、及びプログラム並びに半導体装置の製造方法
CN112652557A (zh) 2016-03-29 2021-04-13 株式会社国际电气 处理装置、装置管理控制器、计算机可读的记录介质、半导体器件的制造方法以及显示方法
CN109643671B (zh) 2016-08-26 2023-06-06 应用材料公司 自我修复式半导体晶片处理
JP2018041217A (ja) * 2016-09-06 2018-03-15 東京エレクトロン株式会社 異常検知方法及び半導体製造装置
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
SG11201908394WA (en) * 2017-03-17 2019-10-30 Fujikin Kk System, Method, And Computer Program For Analyzing Operation Of Fluid Control Device
JP6785699B2 (ja) * 2017-03-28 2020-11-18 東京エレクトロン株式会社 基板処理システム及び制御装置
JP6586440B2 (ja) * 2017-07-11 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7186236B2 (ja) * 2018-09-18 2022-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
JP2020176555A (ja) * 2019-04-18 2020-10-29 株式会社島津製作所 真空ポンプシステム
JP7345353B2 (ja) * 2019-10-25 2023-09-15 東京エレクトロン株式会社 故障検知システム及び故障検知方法
CN113811634B (zh) * 2019-12-17 2023-04-04 株式会社爱发科 测定异常检测装置及测定异常检测方法
KR102455758B1 (ko) 2020-01-30 2022-10-17 가부시키가이샤 스크린 홀딩스 데이터 처리 방법, 데이터 처리 장치 및 기억 매체
JP7366775B2 (ja) 2020-01-30 2023-10-23 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置およびプログラム
JP7230877B2 (ja) * 2020-04-20 2023-03-01 株式会社Sumco エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法
CN113721557B (zh) * 2020-05-25 2022-12-20 中国石油化工股份有限公司 基于关联参数的石化装置运行工艺参数监测方法及装置
JP7413159B2 (ja) * 2020-06-23 2024-01-15 東京エレクトロン株式会社 情報処理装置、プログラム及び監視方法
JP7467261B2 (ja) * 2020-06-30 2024-04-15 東京エレクトロン株式会社 異常検知装置、半導体製造装置及び異常検知方法
CN113189967B (zh) * 2021-05-06 2022-05-27 郑州轻工业大学 一种半导体制程批间控制***的控制性能诊断方法
US20230113095A1 (en) * 2021-10-13 2023-04-13 Applied Materials, Inc. Verification for improving quality of maintenance of manufacturing equipment
JP2023103123A (ja) * 2022-01-13 2023-07-26 株式会社Ｓｃｒｅｅｎホールディングス 適正判定装置および適正判定方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205019A (ja) 1989-02-02 1990-08-14 Hitachi Ltd プラズマ処理装置およびその診断方法
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
JPH09189290A (ja) 1995-12-29 1997-07-22 Kokusai Electric Co Ltd 真空処理装置
JPH1154244A (ja) 1997-08-01 1999-02-26 Kokusai Electric Co Ltd 熱処理炉の加熱用ヒータ断線検出方法及びその装置
JPH11233293A (ja) 1998-02-13 1999-08-27 Kokusai Electric Co Ltd プラズマ処理方法及びプラズマｃｖｄ装置
US6697691B1 (en) * 2000-01-03 2004-02-24 Advanced Micro Devices, Inc. Method and apparatus for fault model analysis in manufacturing tools
US6917845B2 (en) * 2000-03-10 2005-07-12 Smiths Detection-Pasadena, Inc. Method for monitoring environmental condition using a mathematical model
TW576959B (en) * 2001-01-22 2004-02-21 Tokyo Electron Ltd Productivity enhancing system and method thereof of machine
JP4128339B2 (ja) * 2001-03-05 2008-07-30 株式会社日立製作所 試料処理装置用プロセスモニタ及び試料の製造方法
JP4878085B2 (ja) * 2001-04-20 2012-02-15 ラピスセミコンダクタ株式会社 製造工程のための管理方法
US6998611B2 (en) * 2001-09-06 2006-02-14 Ebara Corporation Electron beam apparatus and device manufacturing method using same
US6718220B2 (en) * 2001-11-29 2004-04-06 Windbond Electronics Corporation Method and system of monitoring apparatuses of manufacturing IC
JP4030858B2 (ja) * 2002-10-30 2008-01-09 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US7010364B1 (en) * 2003-09-22 2006-03-07 The Mathworks, Inc. System and method for performing process visualization
JP4384093B2 (ja) * 2004-09-03 2009-12-16 株式会社東芝 プロセス状態管理システム、管理サーバ、プロセス状態管理方法及びプロセス状態管理用プログラム
US7567887B2 (en) * 2004-09-10 2009-07-28 Exxonmobil Research And Engineering Company Application of abnormal event detection technology to fluidized catalytic cracking unit
US20060180570A1 (en) * 2005-02-14 2006-08-17 Mahoney Leonard J Application of in-situ plasma measurements to performance and control of a plasma processing system
KR101322434B1 (ko) * 2005-07-11 2013-10-28 브룩스 오토메이션 인코퍼레이티드 지능형 상태 감시 및 결함 진단 시스템
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask

Also Published As

Publication number Publication date
TW200644121A (en) 2006-12-16
TWI362072B (de) 2012-04-11
WO2006070689A1 (ja) 2006-07-06
KR101208295B1 (ko) 2012-12-05
US7751921B2 (en) 2010-07-06
KR20070090959A (ko) 2007-09-06
EP1845553A4 (de) 2008-11-05
US20080208385A1 (en) 2008-08-28
EP1845553A1 (de) 2007-10-17
EP1845553B1 (de) 2009-10-21

Similar Documents

Publication Publication Date Title
DE602005017310D1 (de) Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist
DE602007000510D1 (de) Verfahren und Vorrichtung zum Zuordnen biometrischer Informationen
DE602006018785D1 (de) Vorrichtung und verfahren zum identifizieren informativer daten in einer prozessteuerumgebung
DE602005012673D1 (de) Schnelles Verfahren zum Detektieren von Objekten durch statistischen Mustervergleich
DE602005017318D1 (de) Verfahren und Vorrichtung zum Bereitstellen von Entwurfsdaten
DE602005011398D1 (de) Verfahren und Vorrichtung zum Nachweis von Spurengasen
DE502006009366D1 (de) Verfahren und vorrichtung zum prädizieren einer bewegungstrajektorie
DE602005011934D1 (de) Vorrichtung zum Einfangen von Kügelchen und Verfahren und Vorrichtung zum Anordnen von Kügelchen
DE602006012823D1 (de) Vorrichtung und verfahren zum neusynthetisieren von signalen
ATE510439T1 (de) Verfahren und vorrichtung zum bestimmen, übermitteln und/oder verwenden von verzögerungsinformationen
DE602005004045D1 (de) Vorrichtung, Verfahren und Computerprogramm zur Vermeidung von Datenverfälschung bei Schreibvorgängen
EP1955273A4 (de) Elektronischer unternehmenskapitalmarktplatz und überwachungsvorrichtung und -verfahren
DE602005004068D1 (de) Vorrichtung und Verfahren zum Testen von Befestigungen für Bauteile
DE602006003274D1 (de) Vorrichtung und Verfahren zur Überprüfung von Gewinden
DE502005007414D1 (de) Verfahren zum auswählen eines oder mehrerer transponder
DE502007001070D1 (de) Vorrichtung und verfahren zum verbinden von bändern
DE502005002663D1 (de) Verfahren und einrichtung zum sortieren von flachen sendungen
DE602006012975D1 (de) Vorrichtung zum binden eines halbleiterbauelements und verfahren zum binden eines halbleiterbauelements damit
AT504567A3 (de) Verfahren und vorrichtung zum bonden von wafern
DE602006020904D1 (de) Verfahren zum testen von antigen
DE112006001870A5 (de) Verfahren und Vorrichtung zum automatischen Beschicken einer Warenausgabeeinrichtung
DE602005021487D1 (de) Verfahren und system zum unterstützen von leseoperationen für iscsi- und iscsi-chimney
DE602005002054D1 (de) Verfahren zum Nachweis von Testkörpern
DE502006005533D1 (de) Verfahren und vorrichtung zum vergleich von daten bei einem rechnersystem mit wenigstens zwei ausführungseinheiten
DE602005021823D1 (de) Verfahren und vorrichtung zum kontaktlosen prüfen von rfid-schlaufen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition