TW200644121A - Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method is - Google Patents
Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method isInfo
- Publication number
- TW200644121A TW200644121A TW094147053A TW94147053A TW200644121A TW 200644121 A TW200644121 A TW 200644121A TW 094147053 A TW094147053 A TW 094147053A TW 94147053 A TW94147053 A TW 94147053A TW 200644121 A TW200644121 A TW 200644121A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor manufacturing
- manufacturing apparatus
- abnormality
- monitored
- status
- Prior art date
Links
- 230000005856 abnormality Effects 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 3
- 238000004590 computer program Methods 0.000 title 1
- 238000001514 detection method Methods 0.000 title 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000001186 cumulative effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0224—Process history based detection method, e.g. whereby history implies the availability of large amounts of data
- G05B23/0227—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions
- G05B23/0235—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions based on a comparison with predetermined threshold or range, e.g. "classical methods", carried out during normal operation; threshold adaptation or choice; when or how to compare with the threshold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004381364A JP4607576B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体製造装置 |
JP2005031111A JP4887628B2 (ja) | 2005-02-07 | 2005-02-07 | 半導体製造装置、コンピュータプログラム及び記憶媒体 |
JP2005038413A JP4607618B2 (ja) | 2005-02-15 | 2005-02-15 | 成膜装置、コンピュータプログラム及び記憶媒体 |
JP2005039869A JP4882239B2 (ja) | 2005-02-16 | 2005-02-16 | 半導体製造装置、コンピュータプログラム及び記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200644121A true TW200644121A (en) | 2006-12-16 |
TWI362072B TWI362072B (zh) | 2012-04-11 |
Family
ID=36614806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094147053A TW200644121A (en) | 2004-12-28 | 2005-12-28 | Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method is |
Country Status (6)
Country | Link |
---|---|
US (1) | US7751921B2 (zh) |
EP (1) | EP1845553B1 (zh) |
KR (1) | KR101208295B1 (zh) |
DE (1) | DE602005017310D1 (zh) |
TW (1) | TW200644121A (zh) |
WO (1) | WO2006070689A1 (zh) |
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JP2007123643A (ja) * | 2005-10-31 | 2007-05-17 | Matsushita Electric Ind Co Ltd | 成膜装置、成膜方法、成膜装置のモニタリングプログラムおよびその記録媒体 |
KR100929944B1 (ko) * | 2006-02-07 | 2009-12-04 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치의 제어 장치 및 기판 처리 장치의 제어 프로그램을 기록한 기억 매체 |
JP4326570B2 (ja) * | 2007-04-17 | 2009-09-09 | 東京エレクトロン株式会社 | ヒータ素線の寿命予測方法,熱処理装置,記録媒体,ヒータ素線の寿命予測処理システム |
US8145337B2 (en) * | 2007-05-04 | 2012-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methodology to enable wafer result prediction of semiconductor wafer batch processing equipment |
CN101330030B (zh) * | 2007-06-21 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | 检测数据中异常点的去除方法 |
US9416448B2 (en) * | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
US9181097B2 (en) * | 2009-02-19 | 2015-11-10 | Sundew Technologies, Llc | Apparatus and methods for safely providing hazardous reactants |
EP2411888A4 (en) * | 2009-03-25 | 2014-05-14 | Hewlett Packard Development Co | POWER DISTRIBUTION UNIT FACILITY CORRELATION |
FR2981474B1 (fr) * | 2011-10-17 | 2013-12-27 | Alstom Technology Ltd | Procede de detection preventive d'une panne d'un appareil, programme d'ordinateur, installation et module de detection preventive d'une panne d'un appareil |
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US9512519B2 (en) * | 2012-12-03 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition apparatus and method |
JP2014194966A (ja) * | 2013-03-28 | 2014-10-09 | Tokyo Electron Ltd | 処理方法及び処理装置 |
WO2014177902A1 (en) * | 2013-04-30 | 2014-11-06 | Siemens Aktiengesellschaft | Method for monitoring a pumping device |
JP6262115B2 (ja) | 2014-02-10 | 2018-01-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US9766136B2 (en) * | 2014-06-09 | 2017-09-19 | Tower Semiconductor Ltd. | Apparatus, system and method of detecting leakage in a chamber |
JP6151227B2 (ja) * | 2014-08-25 | 2017-06-21 | 株式会社東芝 | 異常検知システム及び半導体デバイスの製造方法 |
EP3043159B1 (en) | 2015-01-08 | 2019-12-18 | ams AG | Method for processing light sensor signals and light sensor system |
US20190257685A1 (en) * | 2015-06-24 | 2019-08-22 | Kim Lewis | Transit Time Ultrasonic Meter Diagnostic System Displays |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
JP6584350B2 (ja) * | 2016-03-17 | 2019-10-02 | 東京エレクトロン株式会社 | 制御装置、基板処理システム、基板処理方法及びプログラム |
CN107240564B (zh) | 2016-03-29 | 2021-01-05 | 株式会社国际电气 | 处理装置、装置管理控制器、以及装置管理方法 |
JP6645993B2 (ja) | 2016-03-29 | 2020-02-14 | 株式会社Kokusai Electric | 処理装置、装置管理コントローラ、及びプログラム並びに半導体装置の製造方法 |
WO2018038892A1 (en) | 2016-08-26 | 2018-03-01 | Applied Materials, Inc. | Self-healing semiconductor wafer processing |
JP2018041217A (ja) * | 2016-09-06 | 2018-03-15 | 東京エレクトロン株式会社 | 異常検知方法及び半導体製造装置 |
JP6733516B2 (ja) | 2016-11-21 | 2020-08-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP7008938B2 (ja) * | 2017-03-17 | 2022-01-25 | 株式会社フジキン | 流体制御機器の動作分析システム、方法、及びコンピュータプログラム |
JP6785699B2 (ja) * | 2017-03-28 | 2020-11-18 | 東京エレクトロン株式会社 | 基板処理システム及び制御装置 |
JP6586440B2 (ja) * | 2017-07-11 | 2019-10-02 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
CN112740358B (zh) * | 2018-09-18 | 2024-03-08 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法以及记录介质 |
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JP7366775B2 (ja) * | 2020-01-30 | 2023-10-23 | 株式会社Screenホールディングス | データ処理方法、データ処理装置およびプログラム |
JP7230877B2 (ja) * | 2020-04-20 | 2023-03-01 | 株式会社Sumco | エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法 |
CN113721557B (zh) * | 2020-05-25 | 2022-12-20 | 中国石油化工股份有限公司 | 基于关联参数的石化装置运行工艺参数监测方法及装置 |
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JP7467261B2 (ja) * | 2020-06-30 | 2024-04-15 | 東京エレクトロン株式会社 | 異常検知装置、半導体製造装置及び異常検知方法 |
CN113189967B (zh) * | 2021-05-06 | 2022-05-27 | 郑州轻工业大学 | 一种半导体制程批间控制***的控制性能诊断方法 |
US20230113095A1 (en) * | 2021-10-13 | 2023-04-13 | Applied Materials, Inc. | Verification for improving quality of maintenance of manufacturing equipment |
JP2023103123A (ja) * | 2022-01-13 | 2023-07-26 | 株式会社Screenホールディングス | 適正判定装置および適正判定方法 |
JP2024100608A (ja) * | 2023-01-16 | 2024-07-26 | 株式会社Kokusai Electric | 温度制御方法、半導体装置の製造方法、温度制御システム、基板処理装置、及び、プログラム |
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-
2005
- 2005-12-22 KR KR1020077014655A patent/KR101208295B1/ko active IP Right Grant
- 2005-12-22 US US11/794,374 patent/US7751921B2/en active Active
- 2005-12-22 EP EP05820365A patent/EP1845553B1/en not_active Expired - Fee Related
- 2005-12-22 DE DE602005017310T patent/DE602005017310D1/de active Active
- 2005-12-22 WO PCT/JP2005/023617 patent/WO2006070689A1/ja active Application Filing
- 2005-12-28 TW TW094147053A patent/TW200644121A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101208295B1 (ko) | 2012-12-05 |
WO2006070689A1 (ja) | 2006-07-06 |
DE602005017310D1 (de) | 2009-12-03 |
KR20070090959A (ko) | 2007-09-06 |
TWI362072B (zh) | 2012-04-11 |
EP1845553B1 (en) | 2009-10-21 |
US7751921B2 (en) | 2010-07-06 |
EP1845553A1 (en) | 2007-10-17 |
US20080208385A1 (en) | 2008-08-28 |
EP1845553A4 (en) | 2008-11-05 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |