DE602005006197D1 - Halbleiterspeicherbaustein - Google Patents

Halbleiterspeicherbaustein

Info

Publication number
DE602005006197D1
DE602005006197D1 DE602005006197T DE602005006197T DE602005006197D1 DE 602005006197 D1 DE602005006197 D1 DE 602005006197D1 DE 602005006197 T DE602005006197 T DE 602005006197T DE 602005006197 T DE602005006197 T DE 602005006197T DE 602005006197 D1 DE602005006197 D1 DE 602005006197D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005006197T
Other languages
English (en)
Other versions
DE602005006197T2 (de
Inventor
Kaoru Yamamoto
Nobuhiko Ito
Yoshimitsu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE602005006197D1 publication Critical patent/DE602005006197D1/de
Application granted granted Critical
Publication of DE602005006197T2 publication Critical patent/DE602005006197T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE602005006197T 2004-07-02 2005-06-29 Halbleiterspeicherbaustein Active DE602005006197T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004197007 2004-07-02
JP2004197007A JP4083147B2 (ja) 2004-07-02 2004-07-02 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE602005006197D1 true DE602005006197D1 (de) 2008-06-05
DE602005006197T2 DE602005006197T2 (de) 2009-05-14

Family

ID=35094377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005006197T Active DE602005006197T2 (de) 2004-07-02 2005-06-29 Halbleiterspeicherbaustein

Country Status (6)

Country Link
US (1) US7224611B2 (de)
EP (1) EP1612806B1 (de)
JP (1) JP4083147B2 (de)
KR (1) KR100615423B1 (de)
DE (1) DE602005006197T2 (de)
TW (1) TWI292913B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
WO2008039692A2 (en) * 2006-09-27 2008-04-03 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7684244B2 (en) 2007-05-16 2010-03-23 Atmel Corporation High density non-volatile memory array
US20090046532A1 (en) * 2007-08-17 2009-02-19 Infineon Technologies Ag Supply Voltage for Memory Device
KR101380187B1 (ko) * 2007-10-08 2014-04-03 삼성전자주식회사 저전력, 낮은 독출 디스터번스를 갖는 비휘발성 메모리 장치 및 그것의 프리챠지 방법 및 독출 방법
US9514388B2 (en) 2008-08-12 2016-12-06 Halliburton Energy Services, Inc. Systems and methods employing cooperative optimization-based dimensionality reduction
US8130558B2 (en) * 2009-02-06 2012-03-06 Infineon Technologies Ag System and method for level shifter
US8134870B2 (en) 2009-06-16 2012-03-13 Atmel Corporation High-density non-volatile read-only memory arrays and related methods
US8289779B2 (en) * 2010-03-31 2012-10-16 Micron Technology, Inc. Memory cell sensing device equipped with a ramp voltage generator using a digital-to-analog converter (DAC) and counters, and sensing methods thereof
US8331164B2 (en) * 2010-12-06 2012-12-11 International Business Machines Corporation Compact low-power asynchronous resistor-based memory read operation and circuit
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
CN102426858B (zh) * 2011-11-30 2014-07-23 中国科学院微电子研究所 一种检测存储单元漏电流的方法及***
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US10559365B2 (en) * 2018-03-27 2020-02-11 Sandisk Technologies Llc Peak current suppression
US11636897B2 (en) 2021-03-03 2023-04-25 Sandisk Technologies Llc Peak current and program time optimization through loop dependent voltage ramp target and timing control

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027321A (en) * 1989-11-21 1991-06-25 Intel Corporation Apparatus and method for improved reading/programming of virtual ground EPROM arrays
JP4454896B2 (ja) * 2001-09-27 2010-04-21 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
US6744674B1 (en) * 2003-03-13 2004-06-01 Advanced Micro Devices, Inc. Circuit for fast and accurate memory read operations
US6816423B2 (en) 2002-04-29 2004-11-09 Fujitsu Limited System for control of pre-charge levels in a memory device

Also Published As

Publication number Publication date
JP4083147B2 (ja) 2008-04-30
KR20060049763A (ko) 2006-05-19
DE602005006197T2 (de) 2009-05-14
US7224611B2 (en) 2007-05-29
EP1612806A2 (de) 2006-01-04
TWI292913B (en) 2008-01-21
US20060002175A1 (en) 2006-01-05
KR100615423B1 (ko) 2006-08-25
EP1612806B1 (de) 2008-04-23
TW200617956A (en) 2006-06-01
EP1612806A3 (de) 2006-05-10
JP2006018946A (ja) 2006-01-19

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