DE602004031741D1 - Halterungssystem für behandlungsapparaturen - Google Patents
Halterungssystem für behandlungsapparaturenInfo
- Publication number
- DE602004031741D1 DE602004031741D1 DE602004031741T DE602004031741T DE602004031741D1 DE 602004031741 D1 DE602004031741 D1 DE 602004031741D1 DE 602004031741 T DE602004031741 T DE 602004031741T DE 602004031741 T DE602004031741 T DE 602004031741T DE 602004031741 D1 DE602004031741 D1 DE 602004031741D1
- Authority
- DE
- Germany
- Prior art keywords
- seat
- substantially flat
- passages
- rotate
- mounting system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Treatment Of Fiber Materials (AREA)
- Chain Conveyers (AREA)
- Manipulator (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2004/000335 WO2005121417A1 (en) | 2004-06-09 | 2004-06-09 | Support system for treatment apparatuses |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004031741D1 true DE602004031741D1 (de) | 2011-04-21 |
Family
ID=34957964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004031741T Expired - Lifetime DE602004031741D1 (de) | 2004-06-09 | 2004-06-09 | Halterungssystem für behandlungsapparaturen |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060275104A1 (de) |
EP (1) | EP1651802B1 (de) |
JP (1) | JP4923189B2 (de) |
CN (1) | CN100529198C (de) |
AT (1) | ATE501286T1 (de) |
DE (1) | DE602004031741D1 (de) |
WO (1) | WO2005121417A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002368438A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system________________________ |
EP1570108B1 (de) * | 2002-12-10 | 2009-02-18 | E.T.C. Epitaxial Technology Center SRL | Suszeptorsystem |
DE102005055252A1 (de) * | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD-Reaktor mit gleitgelagerten Suszeptorhalter |
DE102006018514A1 (de) | 2006-04-21 | 2007-10-25 | Aixtron Ag | Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer |
JP6058491B2 (ja) * | 2012-07-13 | 2017-01-11 | 晶元光電股▲ふん▼有限公司 | 気相成長用反応装置 |
ITCO20130041A1 (it) * | 2013-09-27 | 2015-03-28 | Lpe Spa | Suscettore con elemento di supporto |
ITCO20130073A1 (it) | 2013-12-19 | 2015-06-20 | Lpe Spa | Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore |
CN104046962B (zh) * | 2014-06-04 | 2016-07-06 | 中国电子科技集团公司第四十八研究所 | 一种轴向气力驱动行星旋转装置 |
CN106471614B (zh) | 2014-07-03 | 2020-08-25 | Lpe公司 | 用于操纵衬底的工具、操纵方法及外延反应器 |
CN105386121B (zh) * | 2015-10-22 | 2018-05-15 | 中国电子科技集团公司第四十八研究所 | 用于碳化硅外延生长的行星旋转装置 |
US10947640B1 (en) * | 2016-12-02 | 2021-03-16 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating for silicon carbide deposition |
CN106435719A (zh) * | 2016-12-21 | 2017-02-22 | 东莞市天域半导体科技有限公司 | 一种卫星盘自转的SiC外延生长主盘结构 |
CN109594063A (zh) * | 2018-12-27 | 2019-04-09 | 西安奕斯伟硅片技术有限公司 | 一种外延反应设备 |
CN110129881A (zh) * | 2019-05-06 | 2019-08-16 | 杭州弘晟智能科技有限公司 | 一种用于晶圆旋转的气浮基座 |
IT201900022047A1 (it) | 2019-11-25 | 2021-05-25 | Lpe Spa | Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale |
WO2021119900A1 (zh) * | 2019-12-16 | 2021-06-24 | 东莞市中镓半导体科技有限公司 | 用于GaN材料生长的气动托盘 |
CN112117225B (zh) * | 2020-09-23 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 一种半导体外延设备及其基座组件 |
KR20220067988A (ko) * | 2020-11-18 | 2022-05-25 | 주식회사 원익아이피에스 | 기판 지지 조립체 및 기판 처리 장치 |
CN113502535B (zh) * | 2021-09-09 | 2021-12-10 | 材料科学姑苏实验室 | 样品生长装置、样品生长方法及分子束外延*** |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669027B2 (ja) * | 1983-02-21 | 1994-08-31 | 株式会社日立製作所 | 半導体ウエハの薄膜形成方法 |
US4794217A (en) * | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
FR2596070A1 (fr) * | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
JP2773934B2 (ja) * | 1989-11-17 | 1998-07-09 | 古河電気工業株式会社 | 半導体ウエハの成膜装置 |
JPH04100223A (ja) * | 1990-08-18 | 1992-04-02 | Fujitsu Ltd | 半導体処理装置及び処理方法 |
US5155062A (en) * | 1990-12-20 | 1992-10-13 | Cree Research, Inc. | Method for silicon carbide chemical vapor deposition using levitated wafer system |
US5106204A (en) * | 1991-03-25 | 1992-04-21 | Dunham James L | High unit load gas bearing |
US5226383A (en) * | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5221356A (en) * | 1992-10-08 | 1993-06-22 | Northern Telecom Limited | Apparatus for manufacturing semiconductor wafers |
JP2762022B2 (ja) * | 1993-08-25 | 1998-06-04 | 日本エー・エス・エム株式会社 | Cvd装置に使用する回転機構、およびこの機構を利用して被処理体の温度を制御する方法 |
IT1271233B (it) * | 1994-09-30 | 1997-05-27 | Lpe | Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati |
SE9500326D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
SE9600705D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US6005226A (en) * | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
JP2001284259A (ja) * | 2000-03-30 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体ウエハ製造装置におけるウエハ用のホルダ |
DE10055033A1 (de) * | 2000-11-07 | 2002-05-08 | Aixtron Ag | CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor |
DE10055182A1 (de) * | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
DE10056029A1 (de) * | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
US6569250B2 (en) * | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
DE10132448A1 (de) * | 2001-07-04 | 2003-01-23 | Aixtron Ag | CVD-Vorrichtung mit differenziert temperiertem Substrathalter |
ITMI20020306A1 (it) * | 2002-02-15 | 2003-08-18 | Lpe Spa | Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso |
US6797069B2 (en) * | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
JP3908112B2 (ja) * | 2002-07-29 | 2007-04-25 | Sumco Techxiv株式会社 | サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法 |
EP1570108B1 (de) * | 2002-12-10 | 2009-02-18 | E.T.C. Epitaxial Technology Center SRL | Suszeptorsystem |
AU2002368438A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system________________________ |
-
2004
- 2004-06-09 DE DE602004031741T patent/DE602004031741D1/de not_active Expired - Lifetime
- 2004-06-09 AT AT04745167T patent/ATE501286T1/de not_active IP Right Cessation
- 2004-06-09 EP EP04745167A patent/EP1651802B1/de not_active Expired - Lifetime
- 2004-06-09 US US10/552,937 patent/US20060275104A1/en not_active Abandoned
- 2004-06-09 JP JP2006519718A patent/JP4923189B2/ja not_active Expired - Lifetime
- 2004-06-09 WO PCT/IT2004/000335 patent/WO2005121417A1/en not_active Application Discontinuation
- 2004-06-09 CN CNB200480010497XA patent/CN100529198C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1651802B1 (de) | 2011-03-09 |
CN1777707A (zh) | 2006-05-24 |
EP1651802A1 (de) | 2006-05-03 |
US20060275104A1 (en) | 2006-12-07 |
CN100529198C (zh) | 2009-08-19 |
JP4923189B2 (ja) | 2012-04-25 |
ATE501286T1 (de) | 2011-03-15 |
JP2008502122A (ja) | 2008-01-24 |
WO2005121417A1 (en) | 2005-12-22 |
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