TW200721363A - Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit - Google Patents

Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit

Info

Publication number
TW200721363A
TW200721363A TW095126977A TW95126977A TW200721363A TW 200721363 A TW200721363 A TW 200721363A TW 095126977 A TW095126977 A TW 095126977A TW 95126977 A TW95126977 A TW 95126977A TW 200721363 A TW200721363 A TW 200721363A
Authority
TW
Taiwan
Prior art keywords
wafer
wafer holder
heater unit
supporter
contacts
Prior art date
Application number
TW095126977A
Other languages
Chinese (zh)
Inventor
Katsuhiro Itakura
Masuhiro Natsuhara
Tomoyuki Awazu
Hirohiko Nakata
Kenji Shinma
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005213753A external-priority patent/JP2007035737A/en
Priority claimed from JP2005218489A external-priority patent/JP2007035999A/en
Priority claimed from JP2005220353A external-priority patent/JP4462143B2/en
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200721363A publication Critical patent/TW200721363A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

To provide a wafer holder for a wafer prober having small distortion even if a high load is applied, and capable of efficiently preventing a contact failure with a wafer and preventing an increase in temperature of a driving system of the wafer holder. In the wafer holder 1 consisting of a chuck top 2 and a supporter 4, variation in thickness of the chuck top 2 from a wafer placing surface to a surface where the chuck top 2 contacts the supporter 4, and variation in thickness from the bottom surface of the supporter 4 to a surface where the supporter 4 contacts the chuck top 2 are both set at 50 μm or less. In a structure in which the supporter 4 is divided into an annular tube portion 42 and a pedestal portion 41, variation in thickness of the annular tube portion 42 from a surface where the annular tube portion 42 contacts the chuck top 2 to a surface where the annular tube portion 42 contacts the pedestal portion 41, and variation in thickness from the bottom of the pedestal portion 41 to a surface where the pedestal portion 41 contacts the annular tube portion 42 are both set at 25μm or less.
TW095126977A 2005-07-25 2006-07-24 Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit TW200721363A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005213753A JP2007035737A (en) 2005-07-25 2005-07-25 Wafer holder, and wafer prober provided with wafer holder
JP2005218489A JP2007035999A (en) 2005-07-28 2005-07-28 Wafer holding body for wafer prober, and wafer prober for mounting the same
JP2005220353A JP4462143B2 (en) 2005-07-29 2005-07-29 Wafer holder and wafer prober provided with wafer holder

Publications (1)

Publication Number Publication Date
TW200721363A true TW200721363A (en) 2007-06-01

Family

ID=37693104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126977A TW200721363A (en) 2005-07-25 2006-07-24 Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit

Country Status (2)

Country Link
US (1) US20070023320A1 (en)
TW (1) TW200721363A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303109A (en) * 2012-05-17 2015-01-21 Asml荷兰有限公司 Thermal conditioning unit, lithographic apparatus and device manufacturing method

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* Cited by examiner, † Cited by third party
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WO2011156049A1 (en) * 2010-06-07 2011-12-15 Cascade Microtech, Inc. High voltage chuck for a probe station
JP5632317B2 (en) * 2011-03-19 2014-11-26 東京エレクトロン株式会社 Cooling device operating method and inspection device
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US11280827B2 (en) * 2016-02-29 2022-03-22 Teradyne, Inc. Thermal control of a probe card assembly
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
CN111699438B (en) * 2018-01-04 2023-08-01 Asml荷兰有限公司 Optical measuring method and sensor device
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452137B1 (en) * 1999-09-07 2002-09-17 Ibiden Co., Ltd. Ceramic heater
JP2001203257A (en) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd Wafer holder for semiconductor manufacturing apparatus
WO2001059833A1 (en) * 2000-02-08 2001-08-16 Ibiden Co., Ltd. Ceramic board for semiconductor production and inspection devices
US6424141B1 (en) * 2000-07-13 2002-07-23 The Micromanipulator Company, Inc. Wafer probe station

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303109A (en) * 2012-05-17 2015-01-21 Asml荷兰有限公司 Thermal conditioning unit, lithographic apparatus and device manufacturing method
CN104303109B (en) * 2012-05-17 2017-06-09 Asml荷兰有限公司 Conditioning unit, lithographic equipment and device making method
CN107300835A (en) * 2012-05-17 2017-10-27 Asml荷兰有限公司 Conditioning unit, lithographic equipment and device making method
US9891541B2 (en) 2012-05-17 2018-02-13 Asml Netherlands B.V. Thermal conditioning unit, lithographic apparatus and device manufacturing method
US10191395B2 (en) 2012-05-17 2019-01-29 Asml Neatherlands B.V. Thermal conditioning unit, lithographic apparatus and device manufacturing method
CN107300835B (en) * 2012-05-17 2019-02-15 Asml荷兰有限公司 Conditioning unit, lithographic equipment and device making method

Also Published As

Publication number Publication date
US20070023320A1 (en) 2007-02-01

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