TW200644116A - Etching method and apparatus - Google Patents

Etching method and apparatus

Info

Publication number
TW200644116A
TW200644116A TW095110091A TW95110091A TW200644116A TW 200644116 A TW200644116 A TW 200644116A TW 095110091 A TW095110091 A TW 095110091A TW 95110091 A TW95110091 A TW 95110091A TW 200644116 A TW200644116 A TW 200644116A
Authority
TW
Taiwan
Prior art keywords
gas
wafer
processing
supplied
gas chamber
Prior art date
Application number
TW095110091A
Other languages
Chinese (zh)
Other versions
TWI399808B (en
Inventor
Shigeru Tahara
Masaru Nishino
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200644116A publication Critical patent/TW200644116A/en
Application granted granted Critical
Publication of TWI399808B publication Critical patent/TWI399808B/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Abstract

To provide a technique which improves the evenness in the surface of a substrate for etching processing, in etching by using the gas containing carbon and halogen atom. A gas supplier 4 can supply processing gas to a wafer W independently of a first gas chamber 45 countering a central area of the semiconductor wafer W of a substrate, and of a second gas chamber 46 opposite to circumferential area of the wafer W. When first gas containing carbon the number of which is two or less in one molecule and fluoride is supplied to the wafer W so as to carry out etching processing, the processing gas is supplied so that the amount of supply from the first gas chamber 45 may increase more than the second gas chamber 46. When the second gas containing carbon the number of which is three or more in one molecule and fluoride is supplied to the wafer W so as to carry out etching processing, the processing gas is supplied so that the amount of supply from the second gas chamber 46 may increase more than the first gas chamber 45.
TW095110091A 2005-03-25 2006-03-23 Etching method and etching device TWI399808B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005087889A JP4701776B2 (en) 2005-03-25 2005-03-25 Etching method and etching apparatus

Publications (2)

Publication Number Publication Date
TW200644116A true TW200644116A (en) 2006-12-16
TWI399808B TWI399808B (en) 2013-06-21

Family

ID=37015709

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110091A TWI399808B (en) 2005-03-25 2006-03-23 Etching method and etching device

Country Status (4)

Country Link
JP (1) JP4701776B2 (en)
KR (1) KR100801768B1 (en)
CN (1) CN100487871C (en)
TW (1) TWI399808B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710021B (en) * 2014-12-25 2020-11-11 日商東京威力科創股份有限公司 Etching treatment method

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JP5378706B2 (en) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 Plasma processing apparatus and processing gas supply apparatus used therefor
WO2013047531A1 (en) 2011-09-27 2013-04-04 東京エレクトロン株式会社 Plasma etching method and method for manufacturing semiconductor device
JP5860668B2 (en) * 2011-10-28 2016-02-16 東京エレクトロン株式会社 Manufacturing method of semiconductor device
CN103474320B (en) * 2012-06-06 2015-12-02 南亚科技股份有限公司 Plasma etching apparatus
CN103928284B (en) * 2013-01-15 2016-04-06 中微半导体设备(上海)有限公司 The method of testing of charge delivery mechanism and gas diverter thereof
JP6154677B2 (en) * 2013-06-28 2017-06-28 東京エレクトロン株式会社 Cleaning method and processing apparatus
CN103779166A (en) * 2014-01-17 2014-05-07 北京京东方光电科技有限公司 Etching device reaction chamber electrode and etching device
JP6423643B2 (en) * 2014-08-08 2018-11-14 東京エレクトロン株式会社 Method for etching a multilayer film
JP6529357B2 (en) 2015-06-23 2019-06-12 東京エレクトロン株式会社 Etching method
JP6910319B2 (en) 2018-04-23 2021-07-28 東京エレクトロン株式会社 How to etch the organic region
JP6920244B2 (en) 2018-04-23 2021-08-18 東京エレクトロン株式会社 Plasma processing method
JP7253729B2 (en) * 2018-10-01 2023-04-07 キオクシア株式会社 Gas generation method and etching apparatus
KR102641752B1 (en) * 2018-11-21 2024-03-04 삼성전자주식회사 Gas injection module, substrate processing apparatus and method for manufacturing semiconductor device using the same
US10872788B2 (en) * 2018-11-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Wet etch apparatus and method for using the same
CN110729161A (en) * 2019-10-21 2020-01-24 上海华虹宏力半导体制造有限公司 Plasma etching device
CN112951696B (en) * 2019-12-10 2024-04-09 中微半导体设备(上海)股份有限公司 Plasma processing equipment, gas baffle structure thereof and plasma processing method
JP2021125504A (en) * 2020-02-03 2021-08-30 株式会社アルバック Plasma etching method and plasma etching device
KR20210125155A (en) * 2020-04-07 2021-10-18 삼성디스플레이 주식회사 Method for manufacturing a display apparatus
CN111668086B (en) * 2020-07-14 2023-04-14 北京北方华创微电子装备有限公司 Semiconductor device and gas supply control method thereof
CN112496556B (en) * 2020-12-01 2022-05-17 强一半导体（苏州）有限公司 MEMS probe laser etching motor and four-dimensional table driving method

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US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
JPH0463424A (en) * 1990-07-02 1992-02-28 Ryoden Semiconductor Syst Eng Kk Reactive ion etching device
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
JP3360265B2 (en) 1996-04-26 2002-12-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US5811357A (en) * 1997-03-26 1998-09-22 International Business Machines Corporation Process of etching an oxide layer
JPH1116888A (en) * 1997-06-24 1999-01-22 Hitachi Ltd Etching device and operation method therefor
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP4482308B2 (en) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2005072205A (en) * 2003-08-22 2005-03-17 Seiko Epson Corp Thermal treatment method, method of forming wiring pattern, electro-optical device, its manufacturing method, and electronic apparatus
JP4550507B2 (en) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP4410117B2 (en) * 2005-01-18 2010-02-03 東京エレクトロン株式会社 Gas setting method, gas setting device, etching device and substrate processing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710021B (en) * 2014-12-25 2020-11-11 日商東京威力科創股份有限公司 Etching treatment method

Also Published As

Publication number Publication date
TWI399808B (en) 2013-06-21
CN1838387A (en) 2006-09-27
KR20060103167A (en) 2006-09-28
KR100801768B1 (en) 2008-02-11
JP4701776B2 (en) 2011-06-15
CN100487871C (en) 2009-05-13
JP2006269879A (en) 2006-10-05

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