DE60200261D1 - Kristall einer Verbindung und Verfahren zur deren Herstellung - Google Patents

Kristall einer Verbindung und Verfahren zur deren Herstellung

Info

Publication number
DE60200261D1
DE60200261D1 DE60200261T DE60200261T DE60200261D1 DE 60200261 D1 DE60200261 D1 DE 60200261D1 DE 60200261 T DE60200261 T DE 60200261T DE 60200261 T DE60200261 T DE 60200261T DE 60200261 D1 DE60200261 D1 DE 60200261D1
Authority
DE
Germany
Prior art keywords
crystal
compound
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60200261T
Other languages
English (en)
Other versions
DE60200261T2 (de
Inventor
Hiroyuki Nagasawa
Kuniaki Yagi
Takamitsu Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE60200261D1 publication Critical patent/DE60200261D1/de
Application granted granted Critical
Publication of DE60200261T2 publication Critical patent/DE60200261T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
DE60200261T 2001-05-10 2002-05-10 Kristall einer Verbindung und Verfahren zur deren Herstellung Expired - Lifetime DE60200261T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001139926 2001-05-10
JP2001139926A JP3761418B2 (ja) 2001-05-10 2001-05-10 化合物結晶およびその製造法

Publications (2)

Publication Number Publication Date
DE60200261D1 true DE60200261D1 (de) 2004-04-22
DE60200261T2 DE60200261T2 (de) 2005-03-10

Family

ID=18986620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60200261T Expired - Lifetime DE60200261T2 (de) 2001-05-10 2002-05-10 Kristall einer Verbindung und Verfahren zur deren Herstellung

Country Status (4)

Country Link
US (2) US6703288B2 (de)
EP (1) EP1258544B1 (de)
JP (1) JP3761418B2 (de)
DE (1) DE60200261T2 (de)

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ES2288760T3 (es) 1996-04-25 2008-01-16 Bioarray Solutions Ltd. Ensamblaje electrocinetico controlado por luz de particulas proximas a superficies.
US9709559B2 (en) 2000-06-21 2017-07-18 Bioarray Solutions, Ltd. Multianalyte molecular analysis using application-specific random particle arrays
CA2635452A1 (en) 2000-06-21 2001-12-27 Bioarray Solutions, Ltd. Looped probe design to control hybridization stringency
JP2002293686A (ja) * 2001-04-03 2002-10-09 Hitachi Cable Ltd 化合物半導体単結晶の成長方法及びそれから切り出した基板
US7262063B2 (en) 2001-06-21 2007-08-28 Bio Array Solutions, Ltd. Directed assembly of functional heterostructures
EP2722395B1 (de) 2001-10-15 2018-12-19 Bioarray Solutions Ltd Gemultiplexte Analyse polymorphischer Stellen durch gleichzeitige Abfrage und enzymvermittelte Detektion
US7157228B2 (en) * 2002-09-09 2007-01-02 Bioarray Solutions Ltd. Genetic analysis and authentication
AU2003298655A1 (en) 2002-11-15 2004-06-15 Bioarray Solutions, Ltd. Analysis, secure access to, and transmission of array images
KR100550491B1 (ko) * 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
US7927796B2 (en) 2003-09-18 2011-04-19 Bioarray Solutions, Ltd. Number coding for identification of subtypes of coded types of solid phase carriers
CA2539824C (en) 2003-09-22 2015-02-03 Xinwen Wang Surface immobilized polyelectrolyte with multiple functional groups capable of covalently bonding to biomolecules
ATE405947T1 (de) * 2003-09-26 2008-09-15 Soitec Silicon On Insulator Verfahren zur herstellung vonn substraten für epitakitisches wachstum
EP1692298A4 (de) 2003-10-28 2008-08-13 Bioarray Solutions Ltd Optimierung der genexpressionsanalyse unter verwendung immobilisierter fängersonden
US7049077B2 (en) 2003-10-29 2006-05-23 Bioarray Solutions Ltd. Multiplexed nucleic acid analysis by fragmentation of double-stranded DNA
US7385226B2 (en) * 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7848889B2 (en) 2004-08-02 2010-12-07 Bioarray Solutions, Ltd. Automated analysis of multiplexed probe-target interaction patterns: pattern matching and allele identification
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US9508902B2 (en) 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
US8097897B2 (en) 2005-06-21 2012-01-17 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
US8486629B2 (en) 2005-06-01 2013-07-16 Bioarray Solutions, Ltd. Creation of functionalized microparticle libraries by oligonucleotide ligation or elongation
JP5041902B2 (ja) * 2007-07-24 2012-10-03 三洋電機株式会社 半導体レーザ素子
JP5022136B2 (ja) * 2007-08-06 2012-09-12 三洋電機株式会社 半導体素子の製造方法および半導体素子
KR20100067114A (ko) * 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법
JP2009234906A (ja) 2008-03-03 2009-10-15 Mitsubishi Chemicals Corp 窒化物半導体結晶とその製造方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP5345499B2 (ja) 2009-10-15 2013-11-20 Ｈｏｙａ株式会社 化合物単結晶およびその製造方法
JP5693946B2 (ja) * 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP6248532B2 (ja) * 2013-10-17 2017-12-20 セイコーエプソン株式会社 ３Ｃ−ＳｉＣエピタキシャル層の製造方法、３Ｃ−ＳｉＣエピタキシャル基板および半導体装置
WO2018177552A1 (en) 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146300A (en) * 1977-05-25 1978-12-20 Sharp Corp Production of silicon carbide substrate
US5122223A (en) * 1979-05-29 1992-06-16 Massachusetts Institute Of Technology Graphoepitaxy using energy beams
US4912064A (en) * 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
US5248385A (en) * 1991-06-12 1993-09-28 The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers
JP3111662B2 (ja) 1992-07-27 2000-11-27 東レ株式会社 液晶ポリエステル樹脂組成物
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5501173A (en) * 1993-10-18 1996-03-26 Westinghouse Electric Corporation Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates
JPH07335562A (ja) 1994-06-10 1995-12-22 Hoya Corp 炭化珪素の成膜方法
JP3146874B2 (ja) * 1994-09-13 2001-03-19 三菱化学株式会社 発光ダイオード
JPH08316582A (ja) * 1995-05-19 1996-11-29 Nec Corp 半導体レーザ
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6184144B1 (en) 1997-10-10 2001-02-06 Cornell Research Foundation, Inc. Methods for growing defect-free heteroepitaxial layers
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6416578B1 (en) * 1999-10-08 2002-07-09 Hoya Corporation Silicon carbide film and method for manufacturing the same
EP1439246B1 (de) * 2000-04-07 2008-06-25 Hoya Corporation Verfahren zur Herstellung von Siliziumkarbideinkristall
JP2003068654A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法

Also Published As

Publication number Publication date
US7211337B2 (en) 2007-05-01
DE60200261T2 (de) 2005-03-10
EP1258544B1 (de) 2004-03-17
EP1258544A1 (de) 2002-11-20
US20030040167A1 (en) 2003-02-27
JP3761418B2 (ja) 2006-03-29
US6703288B2 (en) 2004-03-09
US20040127042A1 (en) 2004-07-01
JP2002338395A (ja) 2002-11-27

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition