DE60143682D1 - Herstellungsverfahren für Resonatorbauelemente mit piezoelektrischen Filmen - Google Patents

Herstellungsverfahren für Resonatorbauelemente mit piezoelektrischen Filmen

Info

Publication number
DE60143682D1
DE60143682D1 DE60143682T DE60143682T DE60143682D1 DE 60143682 D1 DE60143682 D1 DE 60143682D1 DE 60143682 T DE60143682 T DE 60143682T DE 60143682 T DE60143682 T DE 60143682T DE 60143682 D1 DE60143682 D1 DE 60143682D1
Authority
DE
Germany
Prior art keywords
production method
piezoelectric films
resonator components
resonator
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143682T
Other languages
English (en)
Inventor
John Eric Bower
John Z Pastalan
George E Rittenhouse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE60143682D1 publication Critical patent/DE60143682D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE60143682T 2000-02-11 2001-01-29 Herstellungsverfahren für Resonatorbauelemente mit piezoelektrischen Filmen Expired - Lifetime DE60143682D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/502,868 US6329305B1 (en) 2000-02-11 2000-02-11 Method for producing devices having piezoelectric films

Publications (1)

Publication Number Publication Date
DE60143682D1 true DE60143682D1 (de) 2011-02-03

Family

ID=23999743

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60143682T Expired - Lifetime DE60143682D1 (de) 2000-02-11 2001-01-29 Herstellungsverfahren für Resonatorbauelemente mit piezoelektrischen Filmen

Country Status (5)

Country Link
US (2) US6329305B1 (de)
EP (1) EP1124269B1 (de)
JP (1) JP4917711B2 (de)
KR (1) KR100859674B1 (de)
DE (1) DE60143682D1 (de)

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US6906451B2 (en) 2002-01-08 2005-06-14 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator
JP2004221622A (ja) * 2002-01-08 2004-08-05 Murata Mfg Co Ltd 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法
US20040164291A1 (en) * 2002-12-18 2004-08-26 Xingwu Wang Nanoelectrical compositions
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US6740588B1 (en) * 2002-03-29 2004-05-25 Silicon Magnetic Systems Smooth metal semiconductor surface and method for making the same
JP2004072715A (ja) * 2002-06-11 2004-03-04 Murata Mfg Co Ltd 圧電薄膜共振子、圧電フィルタ、およびそれを有する電子部品
US7276994B2 (en) * 2002-05-23 2007-10-02 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter
JP4240445B2 (ja) 2002-05-31 2009-03-18 独立行政法人産業技術総合研究所 超高配向窒化アルミニウム薄膜を用いた圧電素子とその製造方法
US6944922B2 (en) 2002-08-13 2005-09-20 Trikon Technologies Limited Method of forming an acoustic resonator
JP3947443B2 (ja) * 2002-08-30 2007-07-18 Ｔｄｋ株式会社 電子デバイス用基板および電子デバイス
KR100483340B1 (ko) * 2002-10-22 2005-04-15 쌍신전자통신주식회사 체적탄성파 소자 및 그 제조방법
DE10301261B4 (de) * 2003-01-15 2018-03-22 Snaptrack, Inc. Mit akustischen Volumenwellen arbeitendes Bauelement und Verfahren zur Herstellung
GB0308249D0 (en) * 2003-04-10 2003-05-14 Trikon Technologies Ltd Method of depositing piezoelectric films
US7227292B2 (en) 2003-04-10 2007-06-05 Aviza Technologies, Inc. Methods of depositing piezoelectric films
JP2005033379A (ja) * 2003-07-09 2005-02-03 Tdk Corp 薄膜バルク波振動子およびその製造方法
JP4657660B2 (ja) * 2003-09-12 2011-03-23 パナソニック株式会社 薄膜バルク音響共振器、その製造方法、フィルタ、複合電子部品および通信機器
JP2005136115A (ja) * 2003-10-30 2005-05-26 Tdk Corp 電子デバイス及びその製造方法
JP2005252069A (ja) 2004-03-05 2005-09-15 Tdk Corp 電子デバイス及びその製造方法
JP4737375B2 (ja) * 2004-03-11 2011-07-27 セイコーエプソン株式会社 アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法並びに液体噴射装置の製造方法
DE102004026654B4 (de) * 2004-06-01 2009-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikromechanisches HF-Schaltelement sowie Verfahren zur Herstellung
JP2006019935A (ja) 2004-06-30 2006-01-19 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2006186831A (ja) * 2004-12-28 2006-07-13 Kyocera Kinseki Corp 圧電薄膜デバイス及びその製造方法
JP4693407B2 (ja) * 2004-12-28 2011-06-01 京セラキンセキ株式会社 圧電薄膜デバイス及びその製造方法
US7450352B2 (en) * 2005-06-28 2008-11-11 Wisconsin Alumni Research Foundation Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers
WO2009006318A1 (en) 2007-06-29 2009-01-08 Artificial Muscle, Inc. Electroactive polymer transducers for sensory feedback applications
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
JP2012015304A (ja) * 2010-06-30 2012-01-19 Sumitomo Electric Ind Ltd 半導体装置
US9553254B2 (en) 2011-03-01 2017-01-24 Parker-Hannifin Corporation Automated manufacturing processes for producing deformable polymer devices and films
TW201250288A (en) 2011-03-22 2012-12-16 Bayer Materialscience Ag Electroactive polymer actuator lenticular system
US9876160B2 (en) 2012-03-21 2018-01-23 Parker-Hannifin Corporation Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices
US9761790B2 (en) 2012-06-18 2017-09-12 Parker-Hannifin Corporation Stretch frame for stretching process
US9590193B2 (en) 2012-10-24 2017-03-07 Parker-Hannifin Corporation Polymer diode
JP2016029430A (ja) * 2014-07-25 2016-03-03 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び電子機器
US10069472B2 (en) 2015-04-10 2018-09-04 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
KR101901696B1 (ko) * 2015-04-10 2018-09-28 삼성전기 주식회사 체적 음향 공진기 및 이를 포함하는 필터
CN109160485B (zh) * 2018-08-09 2020-09-15 南京邮电大学 一种声栅-反射面压电超声能量收集器及其制备方法
KR20200076125A (ko) 2018-12-19 2020-06-29 삼성전기주식회사 체적 음향 공진기
US11990885B2 (en) 2021-06-29 2024-05-21 Qorvo Us, Inc. Method for manufacturing acoustic devices with improved performance

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US5741961A (en) * 1993-08-18 1998-04-21 Sandia Corporation Quartz resonator fluid density and viscosity monitor
US5867074A (en) 1994-03-02 1999-02-02 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave resonator unit, surface mounting type surface acoustic wave resonator unit
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US5903087A (en) * 1997-06-05 1999-05-11 Motorola Inc. Electrode edge wave patterns for piezoelectric resonator
JP3813740B2 (ja) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
US5936150A (en) * 1998-04-13 1999-08-10 Rockwell Science Center, Llc Thin film resonant chemical sensor with resonant acoustic isolator
US6060818A (en) * 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US6329305B1 (en) * 2000-02-11 2001-12-11 Agere Systems Guardian Corp. Method for producing devices having piezoelectric films
US6342134B1 (en) * 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
KR100963040B1 (ko) * 2009-08-06 2010-06-10 이용규 건설용 가설재 파이프 이송장치

Also Published As

Publication number Publication date
US6329305B1 (en) 2001-12-11
JP4917711B2 (ja) 2012-04-18
JP2001313535A (ja) 2001-11-09
EP1124269B1 (de) 2010-12-22
US6475931B2 (en) 2002-11-05
EP1124269A3 (de) 2005-04-06
US20010026981A1 (en) 2001-10-04
EP1124269A2 (de) 2001-08-16
KR100859674B1 (ko) 2008-09-23
KR20010082140A (ko) 2001-08-29

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