DE60138263D1 - Ceriumoxidsol und Abrasiv - Google Patents

Ceriumoxidsol und Abrasiv

Info

Publication number
DE60138263D1
DE60138263D1 DE60138263T DE60138263T DE60138263D1 DE 60138263 D1 DE60138263 D1 DE 60138263D1 DE 60138263 T DE60138263 T DE 60138263T DE 60138263 T DE60138263 T DE 60138263T DE 60138263 D1 DE60138263 D1 DE 60138263D1
Authority
DE
Germany
Prior art keywords
abrasive
cerium oxide
oxide sol
sol
cerium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138263T
Other languages
English (en)
Inventor
Isao Ota
Kenji Tanimoto
Tohru Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Application granted granted Critical
Publication of DE60138263D1 publication Critical patent/DE60138263D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/229—Lanthanum oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Catalysts (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60138263T 2000-12-25 2001-12-20 Ceriumoxidsol und Abrasiv Expired - Lifetime DE60138263D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000392593 2000-12-25
JP2000392592 2000-12-25
JP2001140014 2001-05-10
JP2001140015 2001-05-10

Publications (1)

Publication Number Publication Date
DE60138263D1 true DE60138263D1 (de) 2009-05-20

Family

ID=27481911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138263T Expired - Lifetime DE60138263D1 (de) 2000-12-25 2001-12-20 Ceriumoxidsol und Abrasiv

Country Status (4)

Country Link
US (2) US7887714B2 (de)
EP (1) EP1219568B1 (de)
CN (1) CN1248967C (de)
DE (1) DE60138263D1 (de)

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KR100475976B1 (ko) * 1998-12-25 2005-03-15 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
JP4236857B2 (ja) 2002-03-22 2009-03-11 三井金属鉱業株式会社 セリウム系研摩材およびその製造方法
SG168405A1 (en) * 2002-09-06 2011-02-28 Asahi Glass Co Ltd Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit
JP4311247B2 (ja) * 2004-03-19 2009-08-12 日立電線株式会社 研磨用砥粒、研磨剤、研磨液の製造方法
WO2006049197A1 (ja) * 2004-11-08 2006-05-11 Asahi Glass Company, Limited ＣｅＯ２微粒子の製造方法及び該微粒子を含む研磨用スラリー
DE102005017372A1 (de) * 2005-04-14 2006-10-19 Degussa Ag Wässrige Ceroxiddispersion
KR100812052B1 (ko) * 2005-11-14 2008-03-10 주식회사 엘지화학 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 ｃｍｐ 슬러리
JP4836731B2 (ja) * 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
CN101386420B (zh) * 2007-09-12 2010-09-22 北京有色金属研究总院 一种复合纳米二氧化铈溶胶
WO2009150938A1 (ja) 2008-06-11 2009-12-17 信越化学工業株式会社 合成石英ガラス基板用研磨剤
CN102395643B (zh) 2009-04-15 2013-12-18 罗地亚（中国）投资有限公司 基于铈的颗粒组合物及其制备方法
CN102504705B (zh) * 2011-10-17 2014-07-09 河南省化工研究所有限责任公司 光通讯Zr02陶瓷插芯精密加工用抛光液及其制备方法
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US10287457B2 (en) * 2012-11-02 2019-05-14 Lawrence Livermore National Security, Llc Polishing slurry preventing agglomeration of charged colloids without loss of surface activity
CN105143390B (zh) 2013-04-17 2019-08-13 三星Sdi株式会社 有机膜化学机械研磨浆料组成物及使用其的研磨方法
KR102032758B1 (ko) * 2013-08-05 2019-10-17 삼성전기주식회사 희토류 산화물의 제조방법
CN103923569B (zh) * 2014-05-06 2015-07-08 济南大学 一种玉石翡翠抛光粉的制备方法
KR102350893B1 (ko) 2014-06-24 2022-01-13 로디아 오퍼레이션스 금속 도핑된 세륨 산화물 조성물
KR101773543B1 (ko) * 2015-06-30 2017-09-01 유비머트리얼즈주식회사 연마 입자, 연마 슬러리 및 연마 입자의 제조 방법
CN105176492A (zh) * 2015-09-02 2015-12-23 上海大学 镧元素掺杂氧化硅溶胶复合磨粒、抛光液组合物及其制备方法
KR101900543B1 (ko) * 2015-10-02 2018-09-20 삼성에스디아이 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
CN109937187B (zh) * 2016-11-14 2022-08-09 日挥触媒化成株式会社 氧化铈系复合微粒分散液、其制造方法和包含氧化铈系复合微粒分散液的研磨用磨粒分散液
JP7326166B2 (ja) * 2017-06-15 2023-08-15 ローディア オペレーションズ セリウム系粒子
CN111566179B (zh) * 2017-11-15 2022-03-04 圣戈本陶瓷及塑料股份有限公司 用于实施材料去除操作的组合物及其形成方法
CN108081117A (zh) * 2017-11-29 2018-05-29 浙江工业大学 一种基于软质磨料固着磨具的钽酸锂抛光方法
KR20220087494A (ko) * 2019-10-22 2022-06-24 씨엠씨 머티리얼즈, 인코포레이티드 유전체 cmp를 위한 조성물 및 방법
US20210115300A1 (en) * 2019-10-22 2021-04-22 Cmc Materials, Inc. Composition and method for silicon oxide and carbon doped silicon oxide cmp
KR20220085803A (ko) * 2019-10-22 2022-06-22 씨엠씨 머티리얼즈, 인코포레이티드 자가-정지 연마 조성물 및 방법
US20220332977A1 (en) * 2021-04-16 2022-10-20 Entegris, Inc. Cmp compositions for polishing dielectric materials
CN116410666A (zh) * 2021-12-30 2023-07-11 安集微电子科技（上海）股份有限公司 一种合成氧化铈的方法及一种化学机械抛光液
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物

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Also Published As

Publication number Publication date
US20040223898A1 (en) 2004-11-11
EP1219568A2 (de) 2002-07-03
CN1248967C (zh) 2006-04-05
US20020086618A1 (en) 2002-07-04
US7887714B2 (en) 2011-02-15
EP1219568A3 (de) 2003-12-03
CN1361064A (zh) 2002-07-31
US6887289B2 (en) 2005-05-03
EP1219568B1 (de) 2009-04-08

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Legal Events

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