DE60114338D1 - Herstellungsverfahren für optisches Halbleitermodul - Google Patents

Herstellungsverfahren für optisches Halbleitermodul

Info

Publication number
DE60114338D1
DE60114338D1 DE60114338T DE60114338T DE60114338D1 DE 60114338 D1 DE60114338 D1 DE 60114338D1 DE 60114338 T DE60114338 T DE 60114338T DE 60114338 T DE60114338 T DE 60114338T DE 60114338 D1 DE60114338 D1 DE 60114338D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor module
optical semiconductor
optical
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60114338T
Other languages
English (en)
Other versions
DE60114338T2 (de
Inventor
Nobuyoshi Tatoh
Shinya Nishina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE60114338D1 publication Critical patent/DE60114338D1/de
Application granted granted Critical
Publication of DE60114338T2 publication Critical patent/DE60114338T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE60114338T 2000-09-05 2001-07-27 Herstellungsverfahren für optisches Halbleitermodul Expired - Fee Related DE60114338T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000268185A JP3409781B2 (ja) 2000-09-05 2000-09-05 光半導体モジュールの製造方法
JP2000268185 2000-09-05

Publications (2)

Publication Number Publication Date
DE60114338D1 true DE60114338D1 (de) 2005-12-01
DE60114338T2 DE60114338T2 (de) 2006-07-27

Family

ID=18754993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60114338T Expired - Fee Related DE60114338T2 (de) 2000-09-05 2001-07-27 Herstellungsverfahren für optisches Halbleitermodul

Country Status (6)

Country Link
US (1) US6506624B2 (de)
EP (1) EP1187196B1 (de)
JP (1) JP3409781B2 (de)
KR (1) KR100436876B1 (de)
CA (1) CA2353356A1 (de)
DE (1) DE60114338T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906316B2 (en) * 2000-10-27 2005-06-14 Fuji Electric Co., Ltd. Semiconductor device module
US20050249968A1 (en) * 2004-05-04 2005-11-10 Enthone Inc. Whisker inhibition in tin surfaces of electronic components
US20050249969A1 (en) * 2004-05-04 2005-11-10 Enthone Inc. Preserving solderability and inhibiting whisker growth in tin surfaces of electronic components
US7531739B1 (en) * 2004-10-15 2009-05-12 Marlow Industries, Inc. Build-in-place method of manufacturing thermoelectric modules
JP2006222145A (ja) 2005-02-08 2006-08-24 Sumitomo Electric Ind Ltd レーザモジュール及び実装方法
JP4495158B2 (ja) * 2005-03-15 2010-06-30 パナソニック株式会社 フリップチップ実装方法、バンプ形成方法、フリップチップ実装装置、およびバンプ形成装置
US20070026575A1 (en) * 2005-06-24 2007-02-01 Subramanian Sankara J No flow underfill device and method
JP2007103685A (ja) * 2005-10-05 2007-04-19 Nec Schott Components Corp レーザダイオード用ステム
WO2007097483A1 (en) * 2006-02-24 2007-08-30 Seoul Semiconductor Co., Ltd. Light emitting diode package
EP1936414A2 (de) * 2006-12-14 2008-06-25 JDS Uniphase Corporation Kleines optisches Gehäuse mit mehreren optisch ausgerichteten, gelöteten Elementen darin
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
US9480149B2 (en) 2013-12-10 2016-10-25 Brocade Communications Systems, Inc. Printed circuit board with fluid flow channels
US10205298B2 (en) * 2015-06-29 2019-02-12 Hebei Hymax Optoelectronics Inc. Packaging structure for four-channel integrated tunable laser array chip
CN105161485B (zh) * 2015-07-28 2017-12-26 昆明物理研究所 一体化封装管壳和半导体恒温器及其制备方法
KR102608780B1 (ko) * 2018-09-11 2023-12-04 엘지이노텍 주식회사 열전소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991765A (ja) 1982-11-17 1984-05-26 Tamura Electric Works Ltd 留守番電話装置におけるｖａｃ検出回路
JPH0567844A (ja) * 1991-02-28 1993-03-19 Oki Electric Ind Co Ltd 半導体レーザモジユール
EP0622837B1 (de) * 1993-04-27 2000-10-11 Nec Corporation Verfahren zur Herstellung einer optische Halbleitervorrichtung
JP2848359B2 (ja) 1996-09-24 1999-01-20 住友電気工業株式会社 セラミック端子板及び半導体気密封止容器並びに複合半導体デバイス
JP3047864B2 (ja) * 1997-08-27 2000-06-05 住友電気工業株式会社 光半導体気密封止容器及び光半導体モジュール
EP0899795A3 (de) * 1997-08-27 1999-05-12 Sumitomo Electric Industries, Ltd. Behälter für optisches Halbleiterelement
US6151342A (en) * 1997-12-08 2000-11-21 Coherent, Inc. Bright diode-laser light-source
JP2000196175A (ja) * 1998-12-28 2000-07-14 Toshiba Corp サブキャリア及び半導体装置
US6190940B1 (en) * 1999-01-21 2001-02-20 Lucent Technologies Inc. Flip chip assembly of semiconductor IC chips
JP2001168442A (ja) * 1999-12-07 2001-06-22 Sony Corp 半導体レーザ素子の製造方法、配設基板および支持基板

Also Published As

Publication number Publication date
JP2002076501A (ja) 2002-03-15
US6506624B2 (en) 2003-01-14
JP3409781B2 (ja) 2003-05-26
EP1187196A3 (de) 2004-03-31
KR100436876B1 (ko) 2004-06-23
US20020028572A1 (en) 2002-03-07
EP1187196B1 (de) 2005-10-26
CA2353356A1 (en) 2002-03-05
KR20020019382A (ko) 2002-03-12
DE60114338T2 (de) 2006-07-27
EP1187196A2 (de) 2002-03-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee