DE10291889D2 - Halbleiterchip für die Optoelektronik - Google Patents

Halbleiterchip für die Optoelektronik

Info

Publication number
DE10291889D2
DE10291889D2 DE10291889T DE10291889T DE10291889D2 DE 10291889 D2 DE10291889 D2 DE 10291889D2 DE 10291889 T DE10291889 T DE 10291889T DE 10291889 T DE10291889 T DE 10291889T DE 10291889 D2 DE10291889 D2 DE 10291889D2
Authority
DE
Germany
Prior art keywords
optoelectronics
semiconductor chip
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10291889T
Other languages
English (en)
Other versions
DE10291889B4 (de
Inventor
Ralph Wirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10291889T priority Critical patent/DE10291889B4/de
Application granted granted Critical
Publication of DE10291889D2 publication Critical patent/DE10291889D2/de
Publication of DE10291889B4 publication Critical patent/DE10291889B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE10291889T 2001-04-27 2002-04-26 Halbleiterchip für die Optoelektronik Expired - Fee Related DE10291889B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10291889T DE10291889B4 (de) 2001-04-27 2002-04-26 Halbleiterchip für die Optoelektronik

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10120703A DE10120703A1 (de) 2001-04-27 2001-04-27 Halbleiterchip für die Optoelektronik
DE10120703.4 2001-04-27
DE10291889T DE10291889B4 (de) 2001-04-27 2002-04-26 Halbleiterchip für die Optoelektronik
PCT/DE2002/001530 WO2002089217A2 (de) 2001-04-27 2002-04-26 Halbleiterchip für die optoelektronik

Publications (2)

Publication Number Publication Date
DE10291889D2 true DE10291889D2 (de) 2004-04-15
DE10291889B4 DE10291889B4 (de) 2013-02-21

Family

ID=7682952

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10120703A Withdrawn DE10120703A1 (de) 2001-04-27 2001-04-27 Halbleiterchip für die Optoelektronik
DE10291889T Expired - Fee Related DE10291889B4 (de) 2001-04-27 2002-04-26 Halbleiterchip für die Optoelektronik

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10120703A Withdrawn DE10120703A1 (de) 2001-04-27 2001-04-27 Halbleiterchip für die Optoelektronik

Country Status (5)

Country Link
US (1) US7145181B2 (de)
JP (1) JP2004524710A (de)
DE (2) DE10120703A1 (de)
TW (1) TW541725B (de)
WO (1) WO2002089217A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214566B4 (de) * 2002-04-02 2007-05-24 G.L.I. Global Light Industries Gmbh Homogen paralleles Licht emittierende Leuchtdiode
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7344902B2 (en) 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
GB0610468D0 (en) * 2006-05-26 2006-07-05 Rolls Royce Plc A method of manufacturing a component
DE102007049799A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN101499507B (zh) * 2008-02-01 2011-11-09 富准精密工业(深圳)有限公司 发光二极管
DE102008045331A1 (de) * 2008-09-01 2010-03-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8450767B2 (en) * 2009-05-08 2013-05-28 Epistar Corporation Light-emitting device
US7906795B2 (en) 2009-05-08 2011-03-15 Epistar Corporation Light-emitting device
DE102010027875A1 (de) * 2010-04-16 2011-10-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI513038B (zh) * 2011-01-12 2015-12-11 Epistar Corp 發光裝置
CN103969740A (zh) * 2013-01-31 2014-08-06 鸿富锦精密工业（深圳）有限公司 扩散镜片、光源模组及面光源
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2727508A1 (de) * 1977-06-18 1979-01-04 Siemens Ag Lichtemittierende diode mit hohem wirkungsgrad
DE2755433C2 (de) 1977-12-13 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Strahlungsemittierende Halbleiterdiode
FR2531814B1 (fr) * 1982-08-10 1986-04-11 Thomson Csf Association monolithique de diodes electroluminescentes et de lentilles
JPS63283174A (ja) * 1987-05-15 1988-11-21 Omron Tateisi Electronics Co 発光ダイオ−ド
JPS6442870A (en) * 1987-08-10 1989-02-15 Nec Corp Manufacture of optical semiconductor element
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
JPH02119275A (ja) * 1988-10-28 1990-05-07 Nec Corp 発光ダイオード
US5087949A (en) 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
US5101454A (en) * 1991-02-20 1992-03-31 At&T Bell Laboratories Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance
US5233204A (en) * 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
JPH06338630A (ja) * 1993-05-28 1994-12-06 Omron Corp 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5926320A (en) 1997-05-29 1999-07-20 Teldedyne Lighting And Display Products, Inc. Ring-lens system for efficient beam formation
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
JP2001028456A (ja) * 1999-07-14 2001-01-30 Victor Co Of Japan Ltd 半導体発光素子
DE10019665A1 (de) 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element

Also Published As

Publication number Publication date
JP2004524710A (ja) 2004-08-12
US20040195641A1 (en) 2004-10-07
WO2002089217A3 (de) 2003-01-09
DE10291889B4 (de) 2013-02-21
DE10120703A1 (de) 2002-10-31
TW541725B (en) 2003-07-11
WO2002089217A2 (de) 2002-11-07
US7145181B2 (en) 2006-12-05

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