DE60044330D1 - Verfahren und system zum polieren von halbleiterscheiben - Google Patents

Verfahren und system zum polieren von halbleiterscheiben

Info

Publication number
DE60044330D1
DE60044330D1 DE60044330T DE60044330T DE60044330D1 DE 60044330 D1 DE60044330 D1 DE 60044330D1 DE 60044330 T DE60044330 T DE 60044330T DE 60044330 T DE60044330 T DE 60044330T DE 60044330 D1 DE60044330 D1 DE 60044330D1
Authority
DE
Germany
Prior art keywords
polishing semiconductor
semiconductor discs
discs
polishing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044330T
Other languages
English (en)
Inventor
Liming Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60044330D1 publication Critical patent/DE60044330D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/416—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control of velocity, acceleration or deceleration
    • G05B19/4163—Adaptive control of feed or cutting velocity
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/37—Measurements
    • G05B2219/37398—Thickness
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/37—Measurements
    • G05B2219/37602—Material removal rate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45232—CMP chemical mechanical polishing of wafer
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/49—Nc machine tool, till multiple
    • G05B2219/49085—CMP end point analysis, measure parameters on points to detect end of polishing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Human Computer Interaction (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE60044330T 1999-10-13 2000-09-12 Verfahren und system zum polieren von halbleiterscheiben Expired - Lifetime DE60044330D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/417,417 US6159075A (en) 1999-10-13 1999-10-13 Method and system for in-situ optimization for semiconductor wafers in a chemical mechanical polishing process
PCT/US2000/024945 WO2001027990A1 (en) 1999-10-13 2000-09-12 A method and system for polishing semiconductor wafers

Publications (1)

Publication Number Publication Date
DE60044330D1 true DE60044330D1 (de) 2010-06-17

Family

ID=23653949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044330T Expired - Lifetime DE60044330D1 (de) 1999-10-13 2000-09-12 Verfahren und system zum polieren von halbleiterscheiben

Country Status (7)

Country Link
US (1) US6159075A (de)
EP (1) EP1138071B1 (de)
JP (1) JP2003511873A (de)
KR (1) KR100701356B1 (de)
CN (1) CN100378940C (de)
DE (1) DE60044330D1 (de)
WO (1) WO2001027990A1 (de)

Families Citing this family (42)

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US6276989B1 (en) * 1999-08-11 2001-08-21 Advanced Micro Devices, Inc. Method and apparatus for controlling within-wafer uniformity in chemical mechanical polishing
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6722954B2 (en) * 1999-12-27 2004-04-20 Shin-Etsu Handotai Co., Ltd. Wafer for evaluating machinability of periphery of wafer and method for evaluating machinability of periphery of wafer
US6290572B1 (en) * 2000-03-23 2001-09-18 Micron Technology, Inc. Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
JP2002219645A (ja) * 2000-11-21 2002-08-06 Nikon Corp 研磨装置、この研磨装置を用いた半導体デバイス製造方法並びにこの製造方法によって製造された半導体デバイス
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
DE10065380B4 (de) * 2000-12-27 2006-05-18 Infineon Technologies Ag Verfahren zur Charakterisierung und Simulation eines chemisch-mechanischen Polier-Prozesses
US6620027B2 (en) * 2001-01-09 2003-09-16 Applied Materials Inc. Method and apparatus for hard pad polishing
JP2002273649A (ja) 2001-03-15 2002-09-25 Oki Electric Ind Co Ltd ドレッサ−を有する研磨装置
US6675058B1 (en) * 2001-03-29 2004-01-06 Advanced Micro Devices, Inc. Method and apparatus for controlling the flow of wafers through a process flow
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6727107B1 (en) * 2001-09-07 2004-04-27 Lsi Logic Corporation Method of testing the processing of a semiconductor wafer on a CMP apparatus
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7175503B2 (en) * 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
US20030199112A1 (en) 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
CN1720490B (zh) 2002-11-15 2010-12-08 应用材料有限公司 用于控制具有多变量输入参数的制造工艺的方法和***
US6821895B2 (en) * 2003-02-20 2004-11-23 Taiwan Semiconductor Manufacturing Co., Ltd Dynamically adjustable slurry feed arm for wafer edge profile improvement in CMP
US7299151B2 (en) * 2004-02-04 2007-11-20 Hewlett-Packard Development Company, L.P. Microdevice processing systems and methods
JP2006286766A (ja) * 2005-03-31 2006-10-19 Nec Electronics Corp 化学的機械的研磨方法及び化学的機械的研磨システム
CN100372071C (zh) * 2005-05-19 2008-02-27 上海宏力半导体制造有限公司 薄化硅片方法
DE102006022089A1 (de) * 2006-05-11 2007-11-15 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe mit einr profilierten Kante
JP4942174B2 (ja) * 2006-10-05 2012-05-30 東京エレクトロン株式会社 基板処理システムの処理レシピ最適化方法，基板処理システム，基板処理装置
DE102007015503B4 (de) * 2007-03-30 2013-03-21 Globalfoundries Inc. Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch Berücksichtigung zonenspezifischer Substratdaten
KR100828295B1 (ko) * 2007-06-20 2008-05-07 주식회사 동부하이텍 반도체 소자의 제조 방법
JP5219569B2 (ja) * 2008-03-21 2013-06-26 株式会社東京精密 ウェーハ研削装置における加工良否判定方法およびウェーハ研削装置
CN102152237B (zh) * 2010-02-11 2013-02-27 中芯国际集成电路制造(上海)有限公司 用于化学机械研磨机台的制造程序控制方法及其控制***
CN102463521A (zh) * 2010-11-16 2012-05-23 无锡华润上华半导体有限公司 研磨方法及装置
CN103165487B (zh) * 2011-12-12 2016-02-10 上海华虹宏力半导体制造有限公司 检测图形片硅研磨速率的方法
US20140078495A1 (en) * 2012-09-14 2014-03-20 Stmicroelectronics, Inc. Inline metrology for attaining full wafer map of uniformity and surface charge
CN104827382B (zh) * 2014-02-08 2018-03-20 中芯国际集成电路制造(上海)有限公司 化学机械研磨的方法
CN104827383B (zh) * 2014-02-08 2018-07-20 中芯国际集成电路制造(上海)有限公司 化学机械研磨设备及化学机械研磨的方法
JP6884082B2 (ja) * 2017-10-11 2021-06-09 株式会社Ｓｃｒｅｅｎホールディングス 膜厚測定装置、基板検査装置、膜厚測定方法および基板検査方法
CN108788940B (zh) * 2018-06-26 2020-11-13 上海华力微电子有限公司 化学机械研磨设备工艺能力的监控方法
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
CN110270924B (zh) * 2019-07-31 2021-07-02 上海华虹宏力半导体制造有限公司 Cmp研磨方法
JP2021079518A (ja) * 2019-11-22 2021-05-27 株式会社ディスコ 加工装置、及び加工装置に用いる算出基板
CN113611625B (zh) * 2021-07-30 2024-02-02 上海华虹宏力半导体制造有限公司 一种监控钨cmp工艺出现的晶边钨残留的方法
CN113664712A (zh) * 2021-08-13 2021-11-19 芯盟科技有限公司 涡流侦测装置以及金属层厚度的测量方法

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JPH0616475B2 (ja) * 1987-04-03 1994-03-02 三菱電機株式会社 物品の製造システム及び物品の製造方法
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5408405A (en) * 1993-09-20 1995-04-18 Texas Instruments Incorporated Multi-variable statistical process controller for discrete manufacturing
US5904609A (en) * 1995-04-26 1999-05-18 Fujitsu Limited Polishing apparatus and polishing method
US5665199A (en) 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US6012966A (en) * 1996-05-10 2000-01-11 Canon Kabushiki Kaisha Precision polishing apparatus with detecting means
JPH1076464A (ja) * 1996-08-30 1998-03-24 Canon Inc 研磨方法及びそれを用いた研磨装置
JP3454658B2 (ja) * 1997-02-03 2003-10-06 大日本スクリーン製造株式会社 研磨処理モニター装置

Also Published As

Publication number Publication date
EP1138071A1 (de) 2001-10-04
KR20010086103A (ko) 2001-09-07
KR100701356B1 (ko) 2007-03-28
WO2001027990A1 (en) 2001-04-19
CN1340210A (zh) 2002-03-13
EP1138071B1 (de) 2010-05-05
US6159075A (en) 2000-12-12
CN100378940C (zh) 2008-04-02
JP2003511873A (ja) 2003-03-25

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