CN1340210A - 半导体晶片磨光的方法和*** - Google Patents
半导体晶片磨光的方法和*** Download PDFInfo
- Publication number
- CN1340210A CN1340210A CN00803741A CN00803741A CN1340210A CN 1340210 A CN1340210 A CN 1340210A CN 00803741 A CN00803741 A CN 00803741A CN 00803741 A CN00803741 A CN 00803741A CN 1340210 A CN1340210 A CN 1340210A
- Authority
- CN
- China
- Prior art keywords
- cmp
- wafer
- film thickness
- polishing
- uniformity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 235000012431 wafers Nutrition 0.000 title abstract description 135
- 238000012545 processing Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000012360 testing method Methods 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 18
- 238000005457 optimization Methods 0.000 claims abstract description 16
- 238000013401 experimental design Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 12
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 238000013459 approach Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- 239000007788 liquid Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 7
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- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/416—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control of velocity, acceleration or deceleration
- G05B19/4163—Adaptive control of feed or cutting velocity
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/37—Measurements
- G05B2219/37398—Thickness
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/37—Measurements
- G05B2219/37602—Material removal rate
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45232—CMP chemical mechanical polishing of wafer
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/49—Nc machine tool, till multiple
- G05B2219/49085—CMP end point analysis, measure parameters on points to detect end of polishing process
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/417,417 | 1999-10-13 | ||
US09/417,417 US6159075A (en) | 1999-10-13 | 1999-10-13 | Method and system for in-situ optimization for semiconductor wafers in a chemical mechanical polishing process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1340210A true CN1340210A (zh) | 2002-03-13 |
CN100378940C CN100378940C (zh) | 2008-04-02 |
Family
ID=23653949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008037418A Expired - Fee Related CN100378940C (zh) | 1999-10-13 | 2000-09-12 | 半导体晶片磨光的方法和*** |
Country Status (7)
Country | Link |
---|---|
US (1) | US6159075A (zh) |
EP (1) | EP1138071B1 (zh) |
JP (1) | JP2003511873A (zh) |
KR (1) | KR100701356B1 (zh) |
CN (1) | CN100378940C (zh) |
DE (1) | DE60044330D1 (zh) |
WO (1) | WO2001027990A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372071C (zh) * | 2005-05-19 | 2008-02-27 | 上海宏力半导体制造有限公司 | 薄化硅片方法 |
CN102152237A (zh) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 用于化学机械研磨机台的制造程序控制方法及其控制*** |
CN101165617B (zh) * | 2006-10-05 | 2011-08-17 | 东京毅力科创株式会社 | 基板处理***的处理方案最佳化方法 |
CN102463521A (zh) * | 2010-11-16 | 2012-05-23 | 无锡华润上华半导体有限公司 | 研磨方法及装置 |
CN103165487A (zh) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | 检测图形片硅研磨速率的方法 |
CN103681296A (zh) * | 2012-09-14 | 2014-03-26 | 意法半导体公司 | 用于获得均匀性和表面电荷的全晶片映射的内建度量 |
CN104827383A (zh) * | 2014-02-08 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨设备及化学机械研磨的方法 |
CN104827382A (zh) * | 2014-02-08 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨的方法 |
CN108788940A (zh) * | 2018-06-26 | 2018-11-13 | 上海华力微电子有限公司 | 化学机械研磨设备工艺能力的监控方法 |
CN111699074A (zh) * | 2018-12-26 | 2020-09-22 | 应用材料公司 | 普雷斯顿矩阵产生器 |
CN113611625A (zh) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | 一种监控钨cmp工艺出现的晶边钨残留的方法 |
CN113664712A (zh) * | 2021-08-13 | 2021-11-19 | 芯盟科技有限公司 | 涡流侦测装置以及金属层厚度的测量方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6276989B1 (en) * | 1999-08-11 | 2001-08-21 | Advanced Micro Devices, Inc. | Method and apparatus for controlling within-wafer uniformity in chemical mechanical polishing |
US6640151B1 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
WO2001048802A1 (fr) * | 1999-12-27 | 2001-07-05 | Shin-Etsu Handotai Co., Ltd. | Plaquette pour evaluer l'usinabilite du pourtour d'une plaquette et procede pour evaluer l'usinabilite du pourtour d'une plaquette |
US6290572B1 (en) * | 2000-03-23 | 2001-09-18 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
JP2002219645A (ja) * | 2000-11-21 | 2002-08-06 | Nikon Corp | 研磨装置、この研磨装置を用いた半導体デバイス製造方法並びにこの製造方法によって製造された半導体デバイス |
US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
DE10065380B4 (de) * | 2000-12-27 | 2006-05-18 | Infineon Technologies Ag | Verfahren zur Charakterisierung und Simulation eines chemisch-mechanischen Polier-Prozesses |
US6620027B2 (en) * | 2001-01-09 | 2003-09-16 | Applied Materials Inc. | Method and apparatus for hard pad polishing |
JP2002273649A (ja) | 2001-03-15 | 2002-09-25 | Oki Electric Ind Co Ltd | ドレッサ−を有する研磨装置 |
US6675058B1 (en) * | 2001-03-29 | 2004-01-06 | Advanced Micro Devices, Inc. | Method and apparatus for controlling the flow of wafers through a process flow |
US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
JP3932836B2 (ja) * | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
US6727107B1 (en) * | 2001-09-07 | 2004-04-27 | Lsi Logic Corporation | Method of testing the processing of a semiconductor wafer on a CMP apparatus |
US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US7175503B2 (en) * | 2002-02-04 | 2007-02-13 | Kla-Tencor Technologies Corp. | Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device |
US20030199112A1 (en) | 2002-03-22 | 2003-10-23 | Applied Materials, Inc. | Copper wiring module control |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
CN1720490B (zh) | 2002-11-15 | 2010-12-08 | 应用材料有限公司 | 用于控制具有多变量输入参数的制造工艺的方法和*** |
US6821895B2 (en) * | 2003-02-20 | 2004-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Dynamically adjustable slurry feed arm for wafer edge profile improvement in CMP |
US7299151B2 (en) * | 2004-02-04 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Microdevice processing systems and methods |
JP2006286766A (ja) * | 2005-03-31 | 2006-10-19 | Nec Electronics Corp | 化学的機械的研磨方法及び化学的機械的研磨システム |
DE102006022089A1 (de) * | 2006-05-11 | 2007-11-15 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe mit einr profilierten Kante |
DE102007015503B4 (de) * | 2007-03-30 | 2013-03-21 | Globalfoundries Inc. | Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch Berücksichtigung zonenspezifischer Substratdaten |
KR100828295B1 (ko) * | 2007-06-20 | 2008-05-07 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
JP5219569B2 (ja) * | 2008-03-21 | 2013-06-26 | 株式会社東京精密 | ウェーハ研削装置における加工良否判定方法およびウェーハ研削装置 |
JP6884082B2 (ja) * | 2017-10-11 | 2021-06-09 | 株式会社Screenホールディングス | 膜厚測定装置、基板検査装置、膜厚測定方法および基板検査方法 |
CN110270924B (zh) * | 2019-07-31 | 2021-07-02 | 上海华虹宏力半导体制造有限公司 | Cmp研磨方法 |
JP2021079518A (ja) * | 2019-11-22 | 2021-05-27 | 株式会社ディスコ | 加工装置、及び加工装置に用いる算出基板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0616475B2 (ja) * | 1987-04-03 | 1994-03-02 | 三菱電機株式会社 | 物品の製造システム及び物品の製造方法 |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5408405A (en) * | 1993-09-20 | 1995-04-18 | Texas Instruments Incorporated | Multi-variable statistical process controller for discrete manufacturing |
TW320591B (zh) * | 1995-04-26 | 1997-11-21 | Fujitsu Ltd | |
US5665199A (en) * | 1995-06-23 | 1997-09-09 | Advanced Micro Devices, Inc. | Methodology for developing product-specific interlayer dielectric polish processes |
US6012966A (en) * | 1996-05-10 | 2000-01-11 | Canon Kabushiki Kaisha | Precision polishing apparatus with detecting means |
JPH1076464A (ja) * | 1996-08-30 | 1998-03-24 | Canon Inc | 研磨方法及びそれを用いた研磨装置 |
JP3454658B2 (ja) * | 1997-02-03 | 2003-10-06 | 大日本スクリーン製造株式会社 | 研磨処理モニター装置 |
-
1999
- 1999-10-13 US US09/417,417 patent/US6159075A/en not_active Expired - Lifetime
-
2000
- 2000-09-12 JP JP2001530910A patent/JP2003511873A/ja not_active Withdrawn
- 2000-09-12 CN CNB008037418A patent/CN100378940C/zh not_active Expired - Fee Related
- 2000-09-12 EP EP00966712A patent/EP1138071B1/en not_active Expired - Lifetime
- 2000-09-12 DE DE60044330T patent/DE60044330D1/de not_active Expired - Lifetime
- 2000-09-12 WO PCT/US2000/024945 patent/WO2001027990A1/en active Application Filing
- 2000-09-12 KR KR1020017007330A patent/KR100701356B1/ko not_active IP Right Cessation
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372071C (zh) * | 2005-05-19 | 2008-02-27 | 上海宏力半导体制造有限公司 | 薄化硅片方法 |
CN101165617B (zh) * | 2006-10-05 | 2011-08-17 | 东京毅力科创株式会社 | 基板处理***的处理方案最佳化方法 |
CN102152237A (zh) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 用于化学机械研磨机台的制造程序控制方法及其控制*** |
CN102152237B (zh) * | 2010-02-11 | 2013-02-27 | 中芯国际集成电路制造(上海)有限公司 | 用于化学机械研磨机台的制造程序控制方法及其控制*** |
CN102463521A (zh) * | 2010-11-16 | 2012-05-23 | 无锡华润上华半导体有限公司 | 研磨方法及装置 |
CN103165487A (zh) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | 检测图形片硅研磨速率的方法 |
CN103165487B (zh) * | 2011-12-12 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 检测图形片硅研磨速率的方法 |
CN103681296A (zh) * | 2012-09-14 | 2014-03-26 | 意法半导体公司 | 用于获得均匀性和表面电荷的全晶片映射的内建度量 |
CN104827382A (zh) * | 2014-02-08 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨的方法 |
CN104827383A (zh) * | 2014-02-08 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨设备及化学机械研磨的方法 |
CN104827382B (zh) * | 2014-02-08 | 2018-03-20 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨的方法 |
CN108788940A (zh) * | 2018-06-26 | 2018-11-13 | 上海华力微电子有限公司 | 化学机械研磨设备工艺能力的监控方法 |
CN111699074A (zh) * | 2018-12-26 | 2020-09-22 | 应用材料公司 | 普雷斯顿矩阵产生器 |
CN111699074B (zh) * | 2018-12-26 | 2024-05-03 | 应用材料公司 | 普雷斯顿矩阵产生器 |
US11989492B2 (en) | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
CN113611625A (zh) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | 一种监控钨cmp工艺出现的晶边钨残留的方法 |
CN113611625B (zh) * | 2021-07-30 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | 一种监控钨cmp工艺出现的晶边钨残留的方法 |
CN113664712A (zh) * | 2021-08-13 | 2021-11-19 | 芯盟科技有限公司 | 涡流侦测装置以及金属层厚度的测量方法 |
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KR20010086103A (ko) | 2001-09-07 |
JP2003511873A (ja) | 2003-03-25 |
WO2001027990A1 (en) | 2001-04-19 |
KR100701356B1 (ko) | 2007-03-28 |
CN100378940C (zh) | 2008-04-02 |
EP1138071B1 (en) | 2010-05-05 |
DE60044330D1 (de) | 2010-06-17 |
US6159075A (en) | 2000-12-12 |
EP1138071A1 (en) | 2001-10-04 |
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