DE60040251D1 - Aktive Halbleitersicherung für eine Wechselstromleitung und Zweiwegschaltervorrichtung für die Sicherung - Google Patents

Aktive Halbleitersicherung für eine Wechselstromleitung und Zweiwegschaltervorrichtung für die Sicherung

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Publication number
DE60040251D1
DE60040251D1 DE60040251T DE60040251T DE60040251D1 DE 60040251 D1 DE60040251 D1 DE 60040251D1 DE 60040251 T DE60040251 T DE 60040251T DE 60040251 T DE60040251 T DE 60040251T DE 60040251 D1 DE60040251 D1 DE 60040251D1
Authority
DE
Germany
Prior art keywords
fuse
line
switch device
way switch
active semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60040251T
Other languages
English (en)
Inventor
Shunzou Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Application granted granted Critical
Publication of DE60040251D1 publication Critical patent/DE60040251D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
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    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
DE60040251T 1999-02-14 2000-02-14 Aktive Halbleitersicherung für eine Wechselstromleitung und Zweiwegschaltervorrichtung für die Sicherung Expired - Lifetime DE60040251D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7425799 1999-02-14

Publications (1)

Publication Number Publication Date
DE60040251D1 true DE60040251D1 (de) 2008-10-30

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Application Number Title Priority Date Filing Date
DE60040251T Expired - Lifetime DE60040251D1 (de) 1999-02-14 2000-02-14 Aktive Halbleitersicherung für eine Wechselstromleitung und Zweiwegschaltervorrichtung für die Sicherung

Country Status (3)

Country Link
US (1) US6392859B1 (de)
EP (1) EP1028467B1 (de)
DE (1) DE60040251D1 (de)

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* Cited by examiner, † Cited by third party
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US6441679B1 (en) * 2000-02-14 2002-08-27 Yazaki Corporation Semiconductor active fuse operating at higher supply voltage employing current oscillation
DE10029418A1 (de) * 2000-06-15 2001-12-20 Siemens Ag Überstromschutzschaltung
WO2002029949A2 (en) * 2000-09-29 2002-04-11 Matsushita Electric Works, Ltd. Semiconductor device with protective functions
WO2002097888A1 (fr) * 2001-05-25 2002-12-05 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur de puissance
DE50309428D1 (de) * 2002-10-09 2008-04-30 Siemens Ag Verfahren und vorrichtung zur betätigung eines leistungsschalters
EP1630872B1 (de) * 2003-06-05 2016-12-28 Mitsubishi Denki Kabushiki Kaisha Halbleiterbauelement und verfahren zu seiner herstellung
TWI249287B (en) * 2003-06-25 2006-02-11 Matsushita Electric Works Ltd Electronic switch
TW200509496A (en) * 2003-08-21 2005-03-01 Fultec Pty Ltd Proprietary Integrated electronic disconnecting circuits, methods, and systems
US7122882B2 (en) * 2004-11-02 2006-10-17 Alpha And Omega Semiconductor Ltd. Low cost power MOSFET with current monitoring
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