DE3885153T2 - Methode zur Herstellung einer supraleitenden Dünnschicht. - Google Patents

Methode zur Herstellung einer supraleitenden Dünnschicht.

Info

Publication number
DE3885153T2
DE3885153T2 DE3885153T DE3885153T DE3885153T2 DE 3885153 T2 DE3885153 T2 DE 3885153T2 DE 3885153 T DE3885153 T DE 3885153T DE 3885153 T DE3885153 T DE 3885153T DE 3885153 T2 DE3885153 T2 DE 3885153T2
Authority
DE
Germany
Prior art keywords
making
thin film
superconducting thin
superconducting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3885153T
Other languages
English (en)
Other versions
DE3885153D1 (de
Inventor
Naoji Itami Works Sum Fujimori
Keizo Itami Works Sumit Harada
Shuji Itami Works Sumitom Yazu
Tetsuji Itami Works Sumi Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3885153D1 publication Critical patent/DE3885153D1/de
Application granted granted Critical
Publication of DE3885153T2 publication Critical patent/DE3885153T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3885153T 1987-05-31 1988-05-31 Methode zur Herstellung einer supraleitenden Dünnschicht. Expired - Fee Related DE3885153T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13693887 1987-05-31
JP14061087 1987-06-04
JP14061287 1987-06-04

Publications (2)

Publication Number Publication Date
DE3885153D1 DE3885153D1 (de) 1993-12-02
DE3885153T2 true DE3885153T2 (de) 1994-05-19

Family

ID=27317367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3885153T Expired - Fee Related DE3885153T2 (de) 1987-05-31 1988-05-31 Methode zur Herstellung einer supraleitenden Dünnschicht.

Country Status (3)

Country Link
EP (1) EP0293836B1 (de)
JP (1) JP2501620B2 (de)
DE (1) DE3885153T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564562B2 (ja) * 1987-08-31 1996-12-18 株式会社半導体エネルギー研究所 超電導材料の作製方法
JP2726750B2 (ja) * 1990-11-05 1998-03-11 財団法人 国際超電導産業技術研究センター 酸化物超電導薄膜
SG46182A1 (en) * 1991-01-07 1998-02-20 Ibm Superconducting field-effect transistors with inverted misfet structure and method for making the same
JPH04317408A (ja) * 1991-04-01 1992-11-09 Semiconductor Energy Lab Co Ltd 酸化物超伝導材料
JPH0817250B2 (ja) * 1993-07-30 1996-02-21 工業技術院長 異方性超伝導素子とその作製方法及びこれを用いたフラクソンデバイス
JP4720803B2 (ja) * 2007-08-20 2011-07-13 マックス株式会社 浴室空調装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414814A (en) * 1987-03-19 1989-01-19 Nippon Telegraph & Telephone Manufacture of oxide superconductive thin film

Also Published As

Publication number Publication date
EP0293836B1 (de) 1993-10-27
DE3885153D1 (de) 1993-12-02
EP0293836A1 (de) 1988-12-07
JP2501620B2 (ja) 1996-05-29
JPH01100022A (ja) 1989-04-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee