DE3877983D1 - Halbleiterlaservorrichtung mit externem resonator. - Google Patents

Halbleiterlaservorrichtung mit externem resonator.

Info

Publication number
DE3877983D1
DE3877983D1 DE8888301731T DE3877983T DE3877983D1 DE 3877983 D1 DE3877983 D1 DE 3877983D1 DE 8888301731 T DE8888301731 T DE 8888301731T DE 3877983 T DE3877983 T DE 3877983T DE 3877983 D1 DE3877983 D1 DE 3877983D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
external resonator
resonator
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888301731T
Other languages
English (en)
Other versions
DE3877983T2 (de
Inventor
Nobuyuki Miyauchi
Hidenori Kawanishi
Shigeki Maei
Osamu Yamamoto
Hiroshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3877983D1 publication Critical patent/DE3877983D1/de
Publication of DE3877983T2 publication Critical patent/DE3877983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8888301731T 1987-02-27 1988-02-29 Halbleiterlaservorrichtung mit externem resonator. Expired - Fee Related DE3877983T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62046332A JPS63213389A (ja) 1987-02-27 1987-02-27 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3877983D1 true DE3877983D1 (de) 1993-03-18
DE3877983T2 DE3877983T2 (de) 1993-05-27

Family

ID=12744187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888301731T Expired - Fee Related DE3877983T2 (de) 1987-02-27 1988-02-29 Halbleiterlaservorrichtung mit externem resonator.

Country Status (4)

Country Link
US (1) US4860305A (de)
EP (1) EP0280581B1 (de)
JP (1) JPS63213389A (de)
DE (1) DE3877983T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229890A (ja) * 1987-03-19 1988-09-26 Sharp Corp 外部共振器型半導体レ−ザ装置
JPH0282677A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 外部共振器付半導体レーザ
JPH03293791A (ja) * 1990-04-12 1991-12-25 Canon Inc 半導体光素子、半導体光増幅器及びそれらの製造方法
FR2664439A1 (fr) * 1990-07-06 1992-01-10 Alsthom Cge Alcatel Laser semi-conducteur a reflecteur externe.
US5170409A (en) * 1991-05-09 1992-12-08 Coherent, Inc. Laser resonator assembly
DE19642409B4 (de) * 1995-10-26 2011-05-12 Agilent Technologies, Inc. (n.d.Ges.d. Staates Delaware), Santa Clara "Lasersystem mit externem Resonator"
JPH1093193A (ja) * 1996-09-10 1998-04-10 Oki Electric Ind Co Ltd 光半導体装置及び光源
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
FR2812769B1 (fr) * 2000-08-04 2003-08-29 Cit Alcatel Laser accordable en semi-conducteur a emission par la tranche
JP2003204110A (ja) 2001-11-01 2003-07-18 Furukawa Electric Co Ltd:The 半導体レーザ装置およびこれを用いた半導体レーザモジュール

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
JPS55148482A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
DE3410729A1 (de) * 1984-03-23 1985-09-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Stabilisierter halbleiterlaser
JPS61172387A (ja) * 1985-01-28 1986-08-04 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置および光記録再生装置
JPH0766995B2 (ja) * 1985-06-14 1995-07-19 シャープ株式会社 半導体レーザ装置
JPS61290787A (ja) * 1985-06-18 1986-12-20 Sharp Corp 半導体レ−ザ装置
JP3991393B2 (ja) * 1997-06-11 2007-10-17 住友電気工業株式会社 化合物半導体の製造装置

Also Published As

Publication number Publication date
EP0280581A3 (en) 1989-03-08
EP0280581B1 (de) 1993-02-03
DE3877983T2 (de) 1993-05-27
JPS63213389A (ja) 1988-09-06
US4860305A (en) 1989-08-22
EP0280581A2 (de) 1988-08-31
JPH0533838B2 (de) 1993-05-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee