DE3854333D1 - Infrarot-Detektor. - Google Patents
Infrarot-Detektor.Info
- Publication number
- DE3854333D1 DE3854333D1 DE3854333T DE3854333T DE3854333D1 DE 3854333 D1 DE3854333 D1 DE 3854333D1 DE 3854333 T DE3854333 T DE 3854333T DE 3854333 T DE3854333 T DE 3854333T DE 3854333 D1 DE3854333 D1 DE 3854333D1
- Authority
- DE
- Germany
- Prior art keywords
- infrared detector
- infrared
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US419187A | 1987-01-15 | 1987-01-15 | |
US07/097,567 US4894526A (en) | 1987-01-15 | 1987-09-15 | Infrared-radiation detector device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3854333D1 true DE3854333D1 (de) | 1995-09-28 |
DE3854333T2 DE3854333T2 (de) | 1996-04-18 |
Family
ID=26672731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3854333T Expired - Fee Related DE3854333T2 (de) | 1987-01-15 | 1988-01-07 | Infrarot-Detektor. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4894526A (de) |
EP (1) | EP0275150B1 (de) |
JP (1) | JP2642114B2 (de) |
KR (1) | KR960008181B1 (de) |
CA (1) | CA1302546C (de) |
DE (1) | DE3854333T2 (de) |
ES (1) | ES2076156T3 (de) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6201242B1 (en) | 1987-08-05 | 2001-03-13 | Lockheed Martin Corporation | Bandgap radiation detector |
US5023685A (en) * | 1988-06-06 | 1991-06-11 | Bethea Clyde G | Quantum-well radiation-interactive device, and methods of radiation detection and modulation |
JPH02116175A (ja) * | 1988-10-26 | 1990-04-27 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JPH02121370A (ja) * | 1988-10-29 | 1990-05-09 | Sumitomo Electric Ind Ltd | 光検出器 |
US5185647A (en) * | 1988-12-12 | 1993-02-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Long wavelength infrared detector |
JPH081949B2 (ja) * | 1989-05-30 | 1996-01-10 | 三菱電機株式会社 | 赤外線撮像装置及びその製造方法 |
US5036371A (en) * | 1989-09-27 | 1991-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Multiple quantum well device |
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
US5191784A (en) * | 1989-12-28 | 1993-03-09 | Siemens Corporate Research, Inc. | Opto-electronic gas sensor |
US5012301A (en) * | 1990-02-22 | 1991-04-30 | Northern Telecom Limited | Three terminal semiconductor device |
US5013918A (en) * | 1990-04-02 | 1991-05-07 | The United States Of America As Represented By The Secretary Of The Army | Multicolor infrared photodetector |
JP2941349B2 (ja) * | 1990-04-06 | 1999-08-25 | 株式会社日立製作所 | 超格子apd |
JP2825930B2 (ja) * | 1990-05-14 | 1998-11-18 | ユピテル工業株式会社 | 半導体受光素子 |
JP2825929B2 (ja) * | 1990-05-14 | 1998-11-18 | ユピテル工業株式会社 | 半導体受光素子 |
US5031013A (en) * | 1990-08-13 | 1991-07-09 | The United States Of America As Represented By The Secretary Of The Army | Infrared hot-electron transistor |
JP2825957B2 (ja) * | 1990-09-18 | 1998-11-18 | ユピテル工業株式会社 | 半導体受光素子 |
US5965899A (en) * | 1990-10-31 | 1999-10-12 | Lockheed Martin Corp. | Miniband transport quantum well detector |
JPH06502743A (ja) * | 1990-10-31 | 1994-03-24 | マーチン・マリエッタ・コーポレーション | ミニバンド移送量子ウェル赤外線検知器 |
US5563423A (en) * | 1991-08-15 | 1996-10-08 | Hughes Aircraft Company | Dark current-free multiquantum well superlattice infrared detector |
US5239186A (en) * | 1991-08-26 | 1993-08-24 | Trw Inc. | Composite quantum well infrared detector |
US5300789A (en) * | 1991-12-24 | 1994-04-05 | At&T Bell Laboratories | Article comprising means for modulating the optical transparency of a semiconductor body, and method of operating the article |
US5198659A (en) * | 1992-03-23 | 1993-03-30 | The United States Of America As Represented By The Secretary Of The Army | Wide-range multicolor IR detector |
US5223704A (en) * | 1992-03-31 | 1993-06-29 | At&T Bell Laboratories | Planar buried quantum well photodetector |
US5475341A (en) * | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
US6320200B1 (en) * | 1992-06-01 | 2001-11-20 | Yale University | Sub-nanoscale electronic devices and processes |
JPH06214169A (ja) * | 1992-06-08 | 1994-08-05 | Texas Instr Inc <Ti> | 制御可能な光学的周期的表面フィルタ |
US5311009A (en) * | 1992-07-31 | 1994-05-10 | At&T Bell Laboratories | Quantum well device for producing localized electron states for detectors and modulators |
US5313073A (en) * | 1992-08-06 | 1994-05-17 | University Of Southern California | Light detector using intersub-valence band transitions with strained barriers |
US5627672A (en) * | 1993-02-26 | 1997-05-06 | Texas Instruments Incorporated | Controllable optical periodic surface filters as a Q-switch in a resonant cavity |
GB9304211D0 (en) * | 1993-03-02 | 1993-04-21 | Univ Manchester | A quantom well device |
KR960004594B1 (ko) * | 1993-03-17 | 1996-04-09 | 엘지전자주식회사 | 적외선 광 검출기 |
US5304805A (en) * | 1993-03-26 | 1994-04-19 | Massachusetts Institute Of Technology | Optical-heterodyne receiver for environmental monitoring |
US5347142A (en) * | 1993-06-25 | 1994-09-13 | The United States Of America As Represented By The Secretary Of The Army | Modes of infrared hot electron transistor operation in infrared detection |
US5554882A (en) * | 1993-11-05 | 1996-09-10 | The Boeing Company | Integrated trigger injector for avalanche semiconductor switch devices |
US5539206A (en) * | 1995-04-20 | 1996-07-23 | Loral Vought Systems Corporation | Enhanced quantum well infrared photodetector |
US5567955A (en) * | 1995-05-04 | 1996-10-22 | National Research Council Of Canada | Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device |
US6211529B1 (en) | 1996-08-27 | 2001-04-03 | California Institute Of Technology | Infrared radiation-detecting device |
US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
JP4330210B2 (ja) | 1999-07-30 | 2009-09-16 | 富士通株式会社 | 光半導体装置及びその製造方法 |
JP2001044453A (ja) | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 光検出素子 |
AU4715701A (en) * | 1999-12-13 | 2001-07-03 | Swales Aerospace | Graded band gap multiple quantum well solar cell |
CA2365209C (en) | 2001-05-09 | 2012-03-20 | National Research Council Of Canada | Method for micro-fabricating a pixelless infrared imaging device |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
CA2447828C (en) * | 2003-10-15 | 2012-07-03 | National Research Council Of Canada | Wavelength conversion device with avalanche multiplier |
US7180066B2 (en) * | 2004-11-24 | 2007-02-20 | Chang-Hua Qiu | Infrared detector composed of group III-V nitrides |
KR100785738B1 (ko) | 2006-06-19 | 2007-12-18 | 한국과학기술원 | 볼로미터 |
US8653461B1 (en) | 2007-03-23 | 2014-02-18 | Flir Systems, Inc. | Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth |
US8659664B2 (en) | 2007-03-23 | 2014-02-25 | Flir Systems, Inc. | Thermography camera configured for leak detection |
DE102008006987A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
FR2936602B1 (fr) * | 2008-09-30 | 2010-10-01 | Thales Sa | Detecteur terahertz a puits quantiques |
US8476598B1 (en) * | 2009-08-31 | 2013-07-02 | Sionyx, Inc. | Electromagnetic radiation imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
JP5489626B2 (ja) * | 2009-10-02 | 2014-05-14 | 京セラ株式会社 | 光電変換素子および光電変換方法 |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
KR101920712B1 (ko) * | 2011-08-26 | 2018-11-22 | 삼성전자주식회사 | 튜너블 배리어를 구비한 그래핀 스위칭 소자 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
WO2013172078A1 (ja) | 2012-05-16 | 2013-11-21 | 浜松ホトニクス株式会社 | 光学素子及び光検出器 |
WO2014127376A2 (en) | 2013-02-15 | 2014-08-21 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
EP3039723B1 (de) * | 2013-08-27 | 2024-07-03 | Georgia State University Research Foundation, Inc. | Abstimmbarer fotodetektor mit heissem ladungsträger |
WO2020170703A1 (ja) * | 2019-02-20 | 2020-08-27 | パナソニックIpマネジメント株式会社 | 撮像装置およびその駆動方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4348686A (en) * | 1980-07-28 | 1982-09-07 | The United States Of America As Represented By The Secretary Of The Army | Microwave-infrared detector with semiconductor superlattice region |
GB2106314A (en) * | 1981-09-18 | 1983-04-07 | Philips Electronic Associated | Infra-red radiation imaging devices |
US4525731A (en) * | 1982-12-30 | 1985-06-25 | International Business Machines Corporation | Semiconductor conversion of optical-to-electrical energy |
US4607272A (en) * | 1983-10-06 | 1986-08-19 | The United States Of America As Represented By The United States Department Of Energy | Electro-optical SLS devices for operating at new wavelength ranges |
US4620214A (en) * | 1983-12-02 | 1986-10-28 | California Institute Of Technology | Multiple quantum-well infrared detector |
US4581621A (en) * | 1984-07-02 | 1986-04-08 | Texas Instruments Incorporated | Quantum device output switch |
US4679061A (en) * | 1985-06-14 | 1987-07-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Superlattice photoconductor |
-
1987
- 1987-09-15 US US07/097,567 patent/US4894526A/en not_active Expired - Lifetime
-
1988
- 1988-01-07 ES ES88300096T patent/ES2076156T3/es not_active Expired - Lifetime
- 1988-01-07 DE DE3854333T patent/DE3854333T2/de not_active Expired - Fee Related
- 1988-01-07 EP EP88300096A patent/EP0275150B1/de not_active Expired - Lifetime
- 1988-01-14 JP JP63005006A patent/JP2642114B2/ja not_active Expired - Lifetime
- 1988-01-15 KR KR1019880000235A patent/KR960008181B1/ko not_active IP Right Cessation
- 1988-01-15 CA CA000556608A patent/CA1302546C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0275150A3 (en) | 1989-09-13 |
JP2642114B2 (ja) | 1997-08-20 |
KR960008181B1 (ko) | 1996-06-20 |
KR890012157A (ko) | 1989-08-24 |
US4894526A (en) | 1990-01-16 |
CA1302546C (en) | 1992-06-02 |
ES2076156T3 (es) | 1995-11-01 |
EP0275150A2 (de) | 1988-07-20 |
EP0275150B1 (de) | 1995-08-23 |
JPS63246626A (ja) | 1988-10-13 |
DE3854333T2 (de) | 1996-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |