DE3686976D1 - Bipolares halbleiterbauelement und verfahren zu seiner herstellung. - Google Patents

Bipolares halbleiterbauelement und verfahren zu seiner herstellung.

Info

Publication number
DE3686976D1
DE3686976D1 DE8686100575T DE3686976T DE3686976D1 DE 3686976 D1 DE3686976 D1 DE 3686976D1 DE 8686100575 T DE8686100575 T DE 8686100575T DE 3686976 T DE3686976 T DE 3686976T DE 3686976 D1 DE3686976 D1 DE 3686976D1
Authority
DE
Germany
Prior art keywords
production
semiconductor component
bipolar semiconductor
bipolar
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686100575T
Other languages
English (en)
Other versions
DE3686976T2 (de
Inventor
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3686976D1 publication Critical patent/DE3686976D1/de
Application granted granted Critical
Publication of DE3686976T2 publication Critical patent/DE3686976T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H01L21/28531—Making of side-wall contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE8686100575T 1985-01-17 1986-01-17 Bipolares halbleiterbauelement und verfahren zu seiner herstellung. Expired - Fee Related DE3686976T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60006216A JPS61164262A (ja) 1985-01-17 1985-01-17 半導体装置

Publications (2)

Publication Number Publication Date
DE3686976D1 true DE3686976D1 (de) 1992-11-26
DE3686976T2 DE3686976T2 (de) 1993-04-08

Family

ID=11632324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686100575T Expired - Fee Related DE3686976T2 (de) 1985-01-17 1986-01-17 Bipolares halbleiterbauelement und verfahren zu seiner herstellung.

Country Status (4)

Country Link
US (1) US4824799A (de)
EP (1) EP0189136B1 (de)
JP (1) JPS61164262A (de)
DE (1) DE3686976T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296391A (en) * 1982-03-24 1994-03-22 Nec Corporation Method of manufacturing a bipolar transistor having thin base region
DE3545244A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
JP2503460B2 (ja) * 1986-12-01 1996-06-05 三菱電機株式会社 バイポ−ラトランジスタおよびその製造方法
DE3853313T2 (de) * 1987-04-14 1995-11-16 Fairchild Semiconductor Integrierter Transistor und sein Herstellungsverfahren.
US5166767A (en) * 1987-04-14 1992-11-24 National Semiconductor Corporation Sidewall contact bipolar transistor with controlled lateral spread of selectively grown epitaxial layer
GB8726367D0 (en) * 1987-11-11 1987-12-16 Lsi Logic Ltd Cmos devices
JPH01151268A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp 半導体装置の製造方法
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4971929A (en) * 1988-06-30 1990-11-20 Microwave Modules & Devices, Inc. Method of making RF transistor employing dual metallization with self-aligned first metal
DE3828809A1 (de) * 1988-08-25 1990-03-01 Licentia Gmbh Verfahren zur herstellung von halbleiterbauelementen
JPH0282575A (ja) * 1988-09-19 1990-03-23 Toshiba Corp 半導体装置およびその製造方法
US5001538A (en) * 1988-12-28 1991-03-19 Synergy Semiconductor Corporation Bipolar sinker structure and process for forming same
US5144403A (en) * 1989-02-07 1992-09-01 Hewlett-Packard Company Bipolar transistor with trench-isolated emitter
GB2230135A (en) * 1989-04-05 1990-10-10 Koninkl Philips Electronics Nv Dopant diffusion in semiconductor devices
JP2793837B2 (ja) * 1989-05-10 1998-09-03 株式会社日立製作所 半導体装置の製造方法およびヘテロ接合バイポーラトランジスタ
EP0418421B1 (de) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Bipolartransistors mit verminderter Basis/Kollektor-Kapazität
JP3011729B2 (ja) * 1990-01-16 2000-02-21 沖電気工業株式会社 バイポーラ型半導体集積回路装置の製造方法
JPH03296247A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR920007211A (ko) * 1990-09-06 1992-04-28 김광호 고속 바이폴라 트랜지스터 및 그의 제조방법
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
US5235206A (en) * 1990-10-24 1993-08-10 International Business Machines Corporation Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
US5106767A (en) * 1990-12-07 1992-04-21 International Business Machines Corporation Process for fabricating low capacitance bipolar junction transistor
US5306649A (en) * 1991-07-26 1994-04-26 Avantek, Inc. Method for producing a fully walled emitter-base structure in a bipolar transistor
EP0809279B1 (de) * 1991-09-23 2003-02-19 Infineon Technologies AG Verfahren zur Herstellung eines MOS-Transistors
US5274267A (en) * 1992-01-31 1993-12-28 International Business Machines Corporation Bipolar transistor with low extrinsic base resistance and low noise
US5198375A (en) * 1992-03-23 1993-03-30 Motorola Inc. Method for forming a bipolar transistor structure
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
US5234846A (en) * 1992-04-30 1993-08-10 International Business Machines Corporation Method of making bipolar transistor with reduced topography
JP2601136B2 (ja) * 1993-05-07 1997-04-16 日本電気株式会社 半導体装置の製造方法
JP2551353B2 (ja) * 1993-10-07 1996-11-06 日本電気株式会社 半導体装置及びその製造方法
JP3172031B2 (ja) * 1994-03-15 2001-06-04 株式会社東芝 半導体装置の製造方法
DE4417916A1 (de) 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
US5593905A (en) * 1995-02-23 1997-01-14 Texas Instruments Incorporated Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link
US5592017A (en) * 1995-03-23 1997-01-07 Texas Instruments Incorporated Self-aligned double poly BJT using sige spacers as extrinsic base contacts
EP0834189B1 (de) * 1996-03-29 2004-07-14 Koninklijke Philips Electronics N.V. Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht
JPH10303195A (ja) * 1997-04-23 1998-11-13 Toshiba Corp 半導体装置の製造方法
EP1048065A2 (de) * 1998-08-31 2000-11-02 Koninklijke Philips Electronics N.V. Verfahren zur herstellung eines halbleiterbauelements mit bipolarem transistor
US6444536B2 (en) * 1999-07-08 2002-09-03 Agere Systems Guardian Corp. Method for fabricating bipolar transistors
JP2001332561A (ja) * 2000-05-22 2001-11-30 Nec Corp バイポーラトランジスタおよびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
US6579771B1 (en) * 2001-12-10 2003-06-17 Intel Corporation Self aligned compact bipolar junction transistor layout, and method of making same
US8921195B2 (en) 2012-10-26 2014-12-30 International Business Machines Corporation Isolation scheme for bipolar transistors in BiCMOS technology

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918870B2 (ja) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 半導体集積回路
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
JPS55134964A (en) * 1979-04-10 1980-10-21 Toshiba Corp Semiconductor device and manufacture thereof
US4512075A (en) * 1980-08-04 1985-04-23 Fairchild Camera & Instrument Corporation Method of making an integrated injection logic cell having self-aligned collector and base reduced resistance utilizing selective diffusion from polycrystalline regions
NL8103032A (nl) * 1980-08-04 1982-03-01 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van een snelwerkende bipolaire transistor en transistor vervaardigd volgens deze werkwijze.
US4433470A (en) * 1981-05-19 1984-02-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device utilizing selective etching and diffusion
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS5984469A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS59126671A (ja) * 1983-01-10 1984-07-21 Mitsubishi Electric Corp 半導体装置
JPS59217364A (ja) * 1983-05-26 1984-12-07 Sony Corp 半導体装置の製法
DE3476295D1 (en) * 1983-09-19 1989-02-23 Fairchild Semiconductor Method of manufacturing transistor structures having junctions bound by insulating layers, and resulting structures
US4706378A (en) * 1985-01-30 1987-11-17 Texas Instruments Incorporated Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation
US4764801A (en) * 1985-10-08 1988-08-16 Motorola Inc. Poly-sidewall contact transistors
US4663831A (en) * 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers

Also Published As

Publication number Publication date
EP0189136B1 (de) 1992-10-21
US4824799A (en) 1989-04-25
EP0189136A2 (de) 1986-07-30
DE3686976T2 (de) 1993-04-08
EP0189136A3 (en) 1987-05-13
JPS61164262A (ja) 1986-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee