DE3587100D1 - Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung. - Google Patents
Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung.Info
- Publication number
- DE3587100D1 DE3587100D1 DE8585111301T DE3587100T DE3587100D1 DE 3587100 D1 DE3587100 D1 DE 3587100D1 DE 8585111301 T DE8585111301 T DE 8585111301T DE 3587100 T DE3587100 T DE 3587100T DE 3587100 D1 DE3587100 D1 DE 3587100D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- producing
- integrated circuit
- circuit based
- isolator technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/091—Laser beam processing of fets
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59211703A JPS6189621A (ja) | 1984-10-09 | 1984-10-09 | 半導体装置の製造方法 |
JP60006221A JPS61166074A (ja) | 1985-01-17 | 1985-01-17 | 絶縁ゲ−ト型トランジスタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587100D1 true DE3587100D1 (de) | 1993-03-25 |
DE3587100T2 DE3587100T2 (de) | 1993-09-09 |
Family
ID=26340298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585111301T Expired - Fee Related DE3587100T2 (de) | 1984-10-09 | 1985-09-06 | Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5077233A (de) |
EP (1) | EP0178447B1 (de) |
KR (1) | KR900000561B1 (de) |
DE (1) | DE3587100T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962869A (en) * | 1988-09-28 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US5753542A (en) | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
JP2746301B2 (ja) * | 1988-10-20 | 1998-05-06 | キヤノン株式会社 | 半導体整流素子 |
JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US5946561A (en) * | 1991-03-18 | 1999-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
DE4128333A1 (de) * | 1991-08-27 | 1993-03-04 | Fischer Armin | Verfahren zum gettern von soi-schichten |
US6964890B1 (en) | 1992-03-17 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP3254007B2 (ja) | 1992-06-09 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 薄膜状半導体装置およびその作製方法 |
CN1196184C (zh) * | 1992-07-06 | 2005-04-06 | 株式会社半导体能源研究所 | 半导体器件及其形成方法 |
JP3202362B2 (ja) * | 1992-07-21 | 2001-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN100465742C (zh) * | 1992-08-27 | 2009-03-04 | 株式会社半导体能源研究所 | 有源矩阵显示器 |
TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
DE69428387T2 (de) * | 1993-02-15 | 2002-07-04 | Semiconductor Energy Lab | Herstellungsverfahren für eine kristallisierte Halbleiterschicht |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
TW281786B (de) * | 1993-05-26 | 1996-07-21 | Handotai Energy Kenkyusho Kk | |
US6875628B1 (en) | 1993-05-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method of the same |
US6713330B1 (en) | 1993-06-22 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor |
US5488000A (en) | 1993-06-22 | 1996-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
TW357415B (en) | 1993-07-27 | 1999-05-01 | Semiconductor Engrgy Lab | Semiconductor device and process for fabricating the same |
JP2814049B2 (ja) | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
TW299897U (en) * | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
JP3562590B2 (ja) * | 1993-12-01 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
CN100358095C (zh) * | 1993-12-02 | 2007-12-26 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
JP3195157B2 (ja) * | 1994-03-28 | 2001-08-06 | シャープ株式会社 | 半導体装置の製造方法およびその製造装置 |
TW303526B (de) * | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
JP2900229B2 (ja) | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US5985740A (en) | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
KR100292048B1 (ko) * | 1998-06-09 | 2001-07-12 | 구본준, 론 위라하디락사 | 박막트랜지스터액정표시장치의제조방법 |
KR100296109B1 (ko) * | 1998-06-09 | 2001-10-26 | 구본준, 론 위라하디락사 | 박막트랜지스터제조방법 |
US6326286B1 (en) | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
KR100296110B1 (ko) | 1998-06-09 | 2001-08-07 | 구본준, 론 위라하디락사 | 박막트랜지스터 제조방법 |
US5956603A (en) * | 1998-08-27 | 1999-09-21 | Ultratech Stepper, Inc. | Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
JP4076648B2 (ja) | 1998-12-18 | 2008-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4008133B2 (ja) | 1998-12-25 | 2007-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
JP4202502B2 (ja) | 1998-12-28 | 2008-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3491571B2 (ja) * | 1999-07-13 | 2004-01-26 | 日本電気株式会社 | 半導体薄膜の形成方法 |
JP4101409B2 (ja) * | 1999-08-19 | 2008-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
KR100303142B1 (ko) | 1999-10-29 | 2001-11-02 | 구본준, 론 위라하디락사 | 액정표시패널의 제조방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5317069A (en) * | 1976-07-30 | 1978-02-16 | Fujitsu Ltd | Semiconductor device and its production |
JPS5548926A (en) * | 1978-10-02 | 1980-04-08 | Hitachi Ltd | Preparation of semiconductor device |
JPS5617083A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS56115558A (en) * | 1980-02-18 | 1981-09-10 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit and manufacture thereof |
JPS577926A (en) * | 1980-06-18 | 1982-01-16 | Fujitsu Ltd | Manufacture of semiconductor device |
US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
JPS5799778A (en) * | 1980-12-12 | 1982-06-21 | Citizen Watch Co Ltd | Thin-film transistor |
JPS582073A (ja) * | 1981-06-29 | 1983-01-07 | Sony Corp | 電界効果型トランジスタ |
JPS5814524A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58115851A (ja) * | 1981-12-28 | 1983-07-09 | Seiko Epson Corp | 半導体装置の製造方法 |
FR2535528B1 (fr) * | 1982-10-29 | 1986-01-17 | Efcis | Structure de circuit integre sur substrat isolant avec remblai isolant autour des ilots semi-conducteurs |
JPS59228763A (ja) * | 1983-06-10 | 1984-12-22 | Seiko Epson Corp | 半導体装置 |
JPS6089953A (ja) * | 1983-10-22 | 1985-05-20 | Agency Of Ind Science & Technol | 積層型半導体装置の製造方法 |
JPS60150618A (ja) * | 1984-01-17 | 1985-08-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4686553A (en) * | 1985-08-02 | 1987-08-11 | General Electric Company | Low capacitance amorphous silicon field effect transistor structure |
-
1985
- 1985-09-06 EP EP85111301A patent/EP0178447B1/de not_active Expired - Lifetime
- 1985-09-06 DE DE8585111301T patent/DE3587100T2/de not_active Expired - Fee Related
- 1985-09-27 KR KR1019850007151A patent/KR900000561B1/ko not_active IP Right Cessation
-
1990
- 1990-04-23 US US07/513,045 patent/US5077233A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5077233A (en) | 1991-12-31 |
EP0178447A3 (en) | 1988-02-03 |
EP0178447A2 (de) | 1986-04-23 |
DE3587100T2 (de) | 1993-09-09 |
KR900000561B1 (ko) | 1990-01-31 |
EP0178447B1 (de) | 1993-02-17 |
KR860003661A (ko) | 1986-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |