DE3569067D1 - Semiconductor memory device wirings - Google Patents

Semiconductor memory device wirings

Info

Publication number: DE3569067D1
Authority: DE; Germany
Prior art keywords: memory device; semiconductor memory; device wirings; wirings; semiconductor
Prior art date: 1984-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8585308564T

Other languages

English (en)

Inventor

Taiji Ema

Takashi Yabu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-26

Filing date

1985-11-26

Publication date

1989-04-27

1985-11-26 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1989-04-27 Application granted granted Critical

1989-04-27 Publication of DE3569067D1 publication Critical patent/DE3569067D1/de

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Geometry (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Memories (AREA)

DE8585308564T 1984-11-26 1985-11-26 Semiconductor memory device wirings Expired DE3569067D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59248946A JPS61127161A (ja)	1984-11-26	1984-11-26	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3569067D1 true DE3569067D1 (en)	1989-04-27

Family

ID=17185768

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8585308564T Expired DE3569067D1 (en)	1984-11-26	1985-11-26	Semiconductor memory device wirings

Country Status (5)

Country	Link
US (1)	US4807017A (de)
EP (1)	EP0183517B1 (de)
JP (1)	JPS61127161A (de)
KR (1)	KR900000634B1 (de)
DE (1)	DE3569067D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0787219B2 (ja) *	1986-09-09	1995-09-20	三菱電機株式会社	半導体記憶装置
JPH07120755B2 (ja) *	1986-10-24	1995-12-20	日本電気株式会社	半導体記憶装置
DE3807162A1 (de) *	1987-07-02	1989-01-12	Mitsubishi Electric Corp	Halbleiterspeichereinrichtung
JP2712079B2 (ja) *	1988-02-15	1998-02-10	株式会社東芝	半導体装置
JPH0263163A (ja) *	1988-08-29	1990-03-02	Nec Corp	不揮発性半導体記憶装置
FR2638285B1 (fr) *	1988-10-25	1992-06-19	Commissariat Energie Atomique	Circuit integre a haute densite d'integration tel que memoire eprom et procede d'obtention correspondant
JP2503661B2 (ja) *	1989-06-28	1996-06-05	日本電気株式会社	半導体メモリ素子およびその製造方法
JPH03109767A (ja) *	1989-09-25	1991-05-09	Nec Corp	半導体集積回路装置
US5170243A (en) *	1991-11-04	1992-12-08	International Business Machines Corporation	Bit line configuration for semiconductor memory
JPH09252058A (ja) *	1996-03-15	1997-09-22	Rohm Co Ltd	半導体記憶装置の製造方法および半導体記憶装置
US5751038A (en) *	1996-11-26	1998-05-12	Philips Electronics North America Corporation	Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
US5877976A (en) *	1997-10-28	1999-03-02	International Business Machines Corporation	Memory system having a vertical bitline topology and method therefor
DE10155023B4 (de) *	2001-11-05	2008-11-06	Qimonda Ag	Leitungsanordnung für Bitleitungen zur Kontaktierung mindestens einer Speicherzelle und Verfahren zur Herstellung einer Leitungsanordnung für Bitleitungen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4001871A (en) *	1968-06-17	1977-01-04	Nippon Electric Company, Ltd.	Semiconductor device
US3946421A (en) *	1974-06-28	1976-03-23	Texas Instruments Incorporated	Multi phase double level metal charge coupled device
DE2720533A1 (de) *	1977-05-06	1978-11-09	Siemens Ag	Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
DE2743619A1 (de) *	1977-09-28	1979-03-29	Siemens Ag	Halbleiter-speicherelement und verfahren zu seiner herstellung
US4328563A (en) *	1979-01-12	1982-05-04	Mostek Corporation	High density read only memory
EP0154685B1 (de) *	1980-01-25	1990-04-18	Kabushiki Kaisha Toshiba	Halbleiterspeichervorrichtung
US4536941A (en) *	1980-03-21	1985-08-27	Kuo Chang Kiang	Method of making high density dynamic memory cell
JPS602784B2 (ja) *	1982-12-20	1985-01-23	富士通株式会社	半導体記憶装置

1984
- 1984-11-26 JP JP59248946A patent/JPS61127161A/ja active Pending
1985
- 1985-11-26 DE DE8585308564T patent/DE3569067D1/de not_active Expired
- 1985-11-26 KR KR1019850008822A patent/KR900000634B1/ko not_active IP Right Cessation
- 1985-11-26 EP EP85308564A patent/EP0183517B1/de not_active Expired
1988
- 1988-06-06 US US07/203,634 patent/US4807017A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR900000634B1 (ko)	1990-02-01
KR860004461A (ko)	1986-06-23
EP0183517A3 (en)	1986-12-30
EP0183517B1 (de)	1989-03-22
US4807017A (en)	1989-02-21
EP0183517A2 (de)	1986-06-04
JPS61127161A (ja)	1986-06-14

Legal Events

Date	Code	Title	Description
1990-04-26	8364	No opposition during term of opposition
1994-11-10	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
GB2168195B (en)	1988-06-22	Semiconductor memory device
DE3470246D1 (en)	1988-05-05	Semiconductor memory device
EP0186875A3 (en)	1986-12-17	Semiconductor memory device
EP0172734A3 (en)	1988-06-22	Semiconductor memory device
EP0165106A3 (en)	1989-02-15	Semiconductor memory device
EP0176254A3 (en)	1986-12-30	Semiconductor memory device
EP0175102A3 (en)	1987-12-16	Semiconductor memory device
EP0253631A3 (en)	1989-08-30	Semiconductor memory device
GB8501787D0 (en)	1985-02-27	Semiconductor memory device
EP0152954A3 (en)	1986-10-08	Semiconductor memory device
DE3573186D1 (en)	1989-10-26	Semiconductor memory device
KR920001327B1 (en)	1992-02-10	Semiconductor memory device
EP0170285A3 (en)	1987-09-02	Semiconductor memory device
EP0234891A3 (en)	1987-11-25	Semiconductor memory device
EP0179651A3 (en)	1987-10-07	Semiconductor memory device
EP0178921A3 (en)	1988-03-30	Semiconductor memory device
EP0239187A3 (en)	1990-10-03	Semiconductor memory device
EP0156345A3 (en)	1988-07-27	Semiconductor memory device
EP0178994A3 (en)	1988-08-24	Semiconductor memory device
EP0167281A3 (en)	1988-12-14	Semiconductor memory device
EP0269106A3 (en)	1990-07-04	Semiconductor memory device
EP0170286A3 (en)	1987-10-07	Semiconductor memory device
EP0251559A3 (en)	1990-07-18	Semiconductor memory device
EP0178922A3 (en)	1988-03-30	Semiconductor memory device
EP0175101A3 (en)	1987-12-16	Semiconductor memory device