DE3483171D1 - Thermischer widerstand von halbleiteranordnungen. - Google Patents
Thermischer widerstand von halbleiteranordnungen.Info
- Publication number
- DE3483171D1 DE3483171D1 DE8484303272T DE3483171T DE3483171D1 DE 3483171 D1 DE3483171 D1 DE 3483171D1 DE 8484303272 T DE8484303272 T DE 8484303272T DE 3483171 T DE3483171 T DE 3483171T DE 3483171 D1 DE3483171 D1 DE 3483171D1
- Authority
- DE
- Germany
- Prior art keywords
- thermal resistance
- semiconductor arrangements
- arrangements
- semiconductor
- thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58085363A JPS59210668A (ja) | 1983-05-16 | 1983-05-16 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483171D1 true DE3483171D1 (de) | 1990-10-18 |
Family
ID=13856625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484303272T Expired - Fee Related DE3483171D1 (de) | 1983-05-16 | 1984-05-15 | Thermischer widerstand von halbleiteranordnungen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5003370A (de) |
EP (1) | EP0126611B1 (de) |
JP (1) | JPS59210668A (de) |
DE (1) | DE3483171D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
EP0560123A3 (en) * | 1992-03-12 | 1994-05-25 | Siemens Ag | Power transistor with multiple finger contacts |
US5455449A (en) * | 1994-06-30 | 1995-10-03 | National Semiconductor Corporation | Offset lattice bipolar transistor architecture |
US6060795A (en) * | 1998-03-18 | 2000-05-09 | Intersil Corporation | Semiconductor power pack |
US6140184A (en) | 1998-06-01 | 2000-10-31 | Motorola, Inc. | Method of changing the power dissipation across an array of transistors |
US6593605B2 (en) | 1998-06-01 | 2003-07-15 | Motorola, Inc. | Energy robust field effect transistor |
JP2001028425A (ja) * | 1999-07-15 | 2001-01-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6376898B1 (en) * | 1999-08-02 | 2002-04-23 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor layout with minimized area and improved heat dissipation |
JP4468609B2 (ja) * | 2001-05-21 | 2010-05-26 | 株式会社ルネサステクノロジ | 半導体装置 |
DE60305006T2 (de) * | 2003-05-08 | 2006-11-02 | Infineon Technologies Ag | Schaltungsmodul mit miteinander verschalteten gruppen von überlappenden halbleiterchips |
US20050127399A1 (en) * | 2003-12-12 | 2005-06-16 | Meadows Ronald C. | Non-uniform gate pitch semiconductor devices |
US7135747B2 (en) * | 2004-02-25 | 2006-11-14 | Cree, Inc. | Semiconductor devices having thermal spacers |
US20050242371A1 (en) * | 2004-04-30 | 2005-11-03 | Khemka Vishnu K | High current MOS device with avalanche protection and method of operation |
WO2009057003A1 (en) * | 2007-11-01 | 2009-05-07 | Nxp B.V. | Bipolar transistor with reduced thermal and shot noise level |
US8950207B2 (en) * | 2010-03-30 | 2015-02-10 | Hyper Wear, Inc. | Device for stimulating adaptive thermogenesis in brown adipose tissue |
CN102916076A (zh) * | 2012-09-27 | 2013-02-06 | 奥特斯维能源(太仓)有限公司 | 一种用于太阳能电池的正面电极图案设计 |
US20190181251A1 (en) * | 2017-12-07 | 2019-06-13 | Qualcomm Incorporated | Mesh structure for heterojunction bipolar transistors for rf applications |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2837704A (en) * | 1954-12-02 | 1958-06-03 | Junction transistors | |
GB1050417A (de) * | 1963-07-09 | |||
US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
NL6712617A (de) * | 1967-09-15 | 1969-03-18 | ||
US3783349A (en) * | 1971-05-25 | 1974-01-01 | Harris Intertype Corp | Field effect transistor |
US3878550A (en) * | 1972-10-27 | 1975-04-15 | Raytheon Co | Microwave power transistor |
JPS5329511B2 (de) * | 1974-01-11 | 1978-08-21 | ||
US4148047A (en) * | 1978-01-16 | 1979-04-03 | Honeywell Inc. | Semiconductor apparatus |
DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
JPS5633876A (en) * | 1979-08-29 | 1981-04-04 | Fujitsu Ltd | Transistor |
JPS57100762A (en) * | 1980-12-16 | 1982-06-23 | Rohm Co Ltd | Switching element |
US4441116A (en) * | 1981-07-13 | 1984-04-03 | National Semiconductor Corporation | Controlling secondary breakdown in bipolar power transistors |
FR2531572A1 (fr) * | 1982-08-09 | 1984-02-10 | Radiotechnique Compelec | Dispositif mos a structure plane multicellulaire |
FR2537780A1 (fr) * | 1982-12-08 | 1984-06-15 | Radiotechnique Compelec | Dispositif mos fet de puissance a structure plane multicellulaire |
JPS6010677A (ja) * | 1983-06-30 | 1985-01-19 | Nissan Motor Co Ltd | 縦型mosトランジスタ |
-
1983
- 1983-05-16 JP JP58085363A patent/JPS59210668A/ja active Pending
-
1984
- 1984-05-15 DE DE8484303272T patent/DE3483171D1/de not_active Expired - Fee Related
- 1984-05-15 EP EP84303272A patent/EP0126611B1/de not_active Expired - Lifetime
-
1990
- 1990-07-03 US US07/546,659 patent/US5003370A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5003370A (en) | 1991-03-26 |
EP0126611B1 (de) | 1990-09-12 |
EP0126611A3 (en) | 1987-04-22 |
EP0126611A2 (de) | 1984-11-28 |
JPS59210668A (ja) | 1984-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3481957D1 (de) | Halbleiteranordnung. | |
DE3583302D1 (de) | Halbleiteranordnung. | |
FI841622A0 (fi) | Komplex av teknetium-99m med alkylenaminoximer. | |
DE3679108D1 (de) | Halbleiteranordnungen. | |
DE3483769D1 (de) | Halbleiterdiode. | |
FI843381A (fi) | Foerfarande foer visualisering av plan i en vaetskestroemning med protonkaernmagnetisk resonansavbildning. | |
DE3483171D1 (de) | Thermischer widerstand von halbleiteranordnungen. | |
DE3582653D1 (de) | Halbleiteranordnung. | |
FI844544A0 (fi) | Syntes av fibrinolytiska aemnen med jaest. | |
FI851810L (fi) | Reformering av kolvaeteaonga med anvaendning av serier av aongoeverhettare. | |
DE3684184D1 (de) | Verkapselte halbleiteranordnung. | |
DE3680265D1 (de) | Halbleiterschaltungsanordnung. | |
FI841630A0 (fi) | Foerfarande foer aostadkommande av en projektionsbild med minskad kaenslighet foer objektets roerelser. | |
FI843197A0 (fi) | Foerbaettrat n-paraffin-isoparaffin- separationsfoerfarande med tvaettning av aotercirkulerad reningsgas. | |
IT8419028A0 (it) | Mimetizzazione termica. | |
DE3586810D1 (de) | Halbleiterschaltung. | |
DE3484817D1 (de) | Halbleiteranordnung. | |
IT8224272A0 (it) | Indumento termico. | |
DE3783507D1 (de) | Zusammengesetztes halbleiterbauelement. | |
KR850009736U (ko) | 칩 저항 | |
DE3669793D1 (de) | Halbleiterkreiseinrichtung. | |
FI840138A (fi) | Detergentblandning i partikelform. | |
DE3582104D1 (de) | Halbleiter-temperatursensor. | |
NL192588B (nl) | Halfgeleider geheugenelement. | |
DE3483237D1 (de) | Halbleiteranordnungen mit stoerbandleitung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |