DE3462642D1 - High speed diode - Google Patents

High speed diode

Info

Publication number
DE3462642D1
DE3462642D1 DE8484104089T DE3462642T DE3462642D1 DE 3462642 D1 DE3462642 D1 DE 3462642D1 DE 8484104089 T DE8484104089 T DE 8484104089T DE 3462642 T DE3462642 T DE 3462642T DE 3462642 D1 DE3462642 D1 DE 3462642D1
Authority
DE
Germany
Prior art keywords
high speed
speed diode
diode
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484104089T
Other languages
English (en)
Inventor
Kenji Iimura
Yoichi Nakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13307603&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3462642(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3462642D1 publication Critical patent/DE3462642D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8484104089T 1983-04-13 1984-04-11 High speed diode Expired DE3462642D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066152A JPS59189679A (ja) 1983-04-13 1983-04-13 ダイオ−ド

Publications (1)

Publication Number Publication Date
DE3462642D1 true DE3462642D1 (en) 1987-04-16

Family

ID=13307603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484104089T Expired DE3462642D1 (en) 1983-04-13 1984-04-11 High speed diode

Country Status (4)

Country Link
US (1) US4594602A (de)
EP (1) EP0122598B2 (de)
JP (1) JPS59189679A (de)
DE (1) DE3462642D1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
JPS62115880A (ja) * 1985-11-15 1987-05-27 Shindengen Electric Mfg Co Ltd Ｐｎ接合素子
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
JPH0642542B2 (ja) * 1988-04-08 1994-06-01 株式会社東芝 高耐圧半導体装置の製造方法
DE3823795A1 (de) * 1988-07-14 1990-01-18 Semikron Elektronik Gmbh Schnelle leistungsdiode
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
DE4135259C1 (de) * 1991-10-25 1993-01-07 Semikron Elektronik Gmbh, 8500 Nuernberg, De
JPH06314801A (ja) * 1993-03-05 1994-11-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08125200A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3994443B2 (ja) * 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
JPH0818071A (ja) * 1995-05-25 1996-01-19 Rohm Co Ltd 個別ダイオード装置の製造方法
JPH07326772A (ja) * 1995-05-25 1995-12-12 Rohm Co Ltd 個別ダイオード装置
JPH088446A (ja) * 1995-05-25 1996-01-12 Rohm Co Ltd 個別ダイオード装置
DE19536022A1 (de) * 1995-09-27 1997-04-03 Siemens Ag Diode mit hoher Stoßstromfestigkeit und weichem Abschaltverhalten
JP3444081B2 (ja) * 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
CN1057404C (zh) * 1996-04-02 2000-10-11 电子科技大学 锗硅异质结低正向压降高速二极管
US5859465A (en) * 1996-10-15 1999-01-12 International Rectifier Corporation High voltage power schottky with aluminum barrier metal spaced from first diffused ring
DE19837944A1 (de) * 1998-08-21 2000-02-24 Asea Brown Boveri Verfahren zur Fertigung eines Halbleiterbauelements
WO2001029899A2 (en) * 1999-10-20 2001-04-26 Koninklijke Philips Electronics N.V. Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same
US6632730B1 (en) * 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
JP4080659B2 (ja) * 2000-01-28 2008-04-23 三菱電機株式会社 半導体装置
US6737731B1 (en) * 2000-06-26 2004-05-18 Fairchild Semiconductor Corporation Soft recovery power diode
DE10031461B4 (de) * 2000-06-28 2006-06-29 Infineon Technologies Ag Hochvolt-Diode
DE10126627A1 (de) * 2001-05-31 2002-12-12 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben
JP4000927B2 (ja) * 2002-07-03 2007-10-31 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
US7189610B2 (en) * 2004-10-18 2007-03-13 Semiconductor Components Industries, L.L.C. Semiconductor diode and method therefor
JP5078314B2 (ja) * 2006-10-18 2012-11-21 ローム株式会社 ショットキーバリアダイオードおよびその製造方法
CN102208454B (zh) * 2010-03-31 2013-03-13 比亚迪股份有限公司 快速恢复二极管
JP2012186353A (ja) * 2011-03-07 2012-09-27 Fuji Electric Co Ltd 複合半導体装置
WO2016051973A1 (ja) * 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102016117389B4 (de) * 2015-11-20 2020-05-28 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterchip und Verfahren zur Herstellung eines Leistungshalbleiterchips und Leistungshalbleitereinrichtung
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
CN107623045A (zh) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 一种二极管
CN109801978B (zh) * 2019-03-13 2024-03-19 捷捷半导体有限公司 低压降二极管及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553536A (en) * 1968-11-19 1971-01-05 Rca Corp Semiconductor rectifiers having controlled storage and recovery characteristics
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
JPS4921984B1 (de) * 1969-05-28 1974-06-05
US3964084A (en) * 1974-06-12 1976-06-15 Bell Telephone Laboratories, Incorporated Schottky barrier diode contacts
FR2287774A1 (fr) * 1974-10-08 1976-05-07 Antennes Moulees Plastiques Nouvelle application de diodes pour la commutation de puissance en hyperfrequence
FR2288390A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
JPS5645082A (en) * 1979-09-19 1981-04-24 Toshiba Corp Low-loss diode
JPS5645081A (en) * 1979-09-19 1981-04-24 Toshiba Corp Low-loss diode
JPS57132370A (en) * 1981-02-09 1982-08-16 Toshiba Corp Low-loss diode
JPS5839070A (ja) * 1981-08-31 1983-03-07 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
EP0122598B2 (de) 1990-04-04
EP0122598A2 (de) 1984-10-24
JPS59189679A (ja) 1984-10-27
EP0122598A3 (en) 1985-09-18
US4594602A (en) 1986-06-10
EP0122598B1 (de) 1987-03-11

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8339 Ceased/non-payment of the annual fee