JP5078314B2 - ショットキーバリアダイオードおよびその製造方法 - Google Patents
ショットキーバリアダイオードおよびその製造方法 Download PDFInfo
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- JP5078314B2 JP5078314B2 JP2006283253A JP2006283253A JP5078314B2 JP 5078314 B2 JP5078314 B2 JP 5078314B2 JP 2006283253 A JP2006283253 A JP 2006283253A JP 2006283253 A JP2006283253 A JP 2006283253A JP 5078314 B2 JP5078314 B2 JP 5078314B2
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- Prior art keywords
- schottky barrier
- schottky
- barrier diode
- electrode
- semiconductor layer
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- 230000004888 barrier function Effects 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1 SiC基板
1a (000−1)C面
1b (0001)Si面
2 エピタキシャル層(半導体層)
3 絶縁層
4 ショットキー電極
5 金属層
6 オーミック電極
21 ガードリング
Claims (6)
- SiC基板と、
上記SiC基板上に形成された半導体層と、
上記半導体層に接合されたショットキー電極と、
上記SiC基板のうち上記半導体層が形成された面とは反対側の面に接合されたオーミック電極と、
を備えるショットキーバリアダイオードであって、
上記半導体層上に形成されており、上記半導体層の一部を露出させるとともに内側面が上記半導体層から離間するほど断面寸法が大となるように上記SiC基板の法線方向に対して傾斜した開口を有する絶縁層を備えており、
上記ショットキー電極は、上記半導体層のうち上記開口から露出した部分から上記内側面を経て上記絶縁層上までに至る領域を覆うように形成されており、
上記ショットキー電極は、Moからなるとともに、
上記半導体層と上記ショットキー電極とのショットキーバリアハイトが1.3eVよりも大きく、かつ1.7eV以下であることを特徴とする、ショットキーバリアダイオード。 - 上記ショットキー電極上に形成された金属層を備える、請求項1に記載のショットキーバリアダイオード。
- 上記ショットキー電極と上記金属層との間に介在するTiまたはMoNからなる層を備える、請求項2に記載のショットキーバリアダイオード。
- 上記金属層は、Alからなる、請求項2または3に記載のショットキーバリアダイオード。
- 上記半導体層は、上記SiC基板の(000−1)C面に形成されている、請求項1ないし4のいずれかに記載のショットキーバリアダイオード。
- 上記オーミック電極は、Ti、Ni、Agからなる層が積層された構造とされている、請求項1ないし5のいずれかに記載のショットキーバリアダイオード。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006283253A JP5078314B2 (ja) | 2006-10-18 | 2006-10-18 | ショットキーバリアダイオードおよびその製造方法 |
US11/975,366 US7973318B2 (en) | 2006-10-18 | 2007-10-18 | Schottky barrier diode and method for making the same |
US13/150,635 US8441017B2 (en) | 2006-10-18 | 2011-06-01 | Schottky barrier diode and method for making the same |
US13/887,708 US8679954B2 (en) | 2006-10-18 | 2013-05-06 | Schottky barrier diode and method for making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006283253A JP5078314B2 (ja) | 2006-10-18 | 2006-10-18 | ショットキーバリアダイオードおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008103436A JP2008103436A (ja) | 2008-05-01 |
JP5078314B2 true JP5078314B2 (ja) | 2012-11-21 |
Family
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JP2006283253A Active JP5078314B2 (ja) | 2006-10-18 | 2006-10-18 | ショットキーバリアダイオードおよびその製造方法 |
Country Status (2)
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US (3) | US7973318B2 (ja) |
JP (1) | JP5078314B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5546759B2 (ja) * | 2008-08-05 | 2014-07-09 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
JP5598015B2 (ja) * | 2010-02-23 | 2014-10-01 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
JP5406171B2 (ja) * | 2010-12-08 | 2014-02-05 | ローム株式会社 | SiC半導体装置 |
KR20130049919A (ko) * | 2011-11-07 | 2013-05-15 | 현대자동차주식회사 | 실리콘카바이드 쇼트키 배리어 다이오드 소자 및 이의 제조 방법 |
JP5811930B2 (ja) * | 2012-04-03 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
WO2013183677A1 (ja) | 2012-06-06 | 2013-12-12 | ローム株式会社 | 半導体装置およびその製造方法 |
KR102430498B1 (ko) | 2016-06-28 | 2022-08-09 | 삼성전자주식회사 | 쇼트키 다이오드를 갖는 전자 소자 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US4611385A (en) * | 1982-06-18 | 1986-09-16 | At&T Bell Laboratories | Devices formed utilizing organic materials |
JPS59175763A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体装置 |
JPS59189679A (ja) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | ダイオ−ド |
US5262668A (en) * | 1992-08-13 | 1993-11-16 | North Carolina State University At Raleigh | Schottky barrier rectifier including schottky barrier regions of differing barrier heights |
JP3192809B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社東芝 | 高耐圧炭化珪素ショットキ−・ダイオ−ド |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
JP3230650B2 (ja) * | 1996-03-27 | 2001-11-19 | 富士電機株式会社 | 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子 |
JP3287269B2 (ja) * | 1997-06-02 | 2002-06-04 | 富士電機株式会社 | ダイオードとその製造方法 |
US6303969B1 (en) * | 1998-05-01 | 2001-10-16 | Allen Tan | Schottky diode with dielectric trench |
JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Hoya株式会社 | 炭化珪素製造方法 |
JP3890311B2 (ja) | 2002-03-28 | 2007-03-07 | ローム株式会社 | 半導体装置およびその製造方法 |
US7262434B2 (en) * | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
JP2004022878A (ja) * | 2002-06-18 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
KR100797855B1 (ko) | 2004-03-26 | 2008-01-24 | 자이단호징 덴료쿠추오켄큐쇼 | 쇼트키 접합형 반도체 장치의 제조방법 |
JP4021448B2 (ja) * | 2004-03-26 | 2007-12-12 | 財団法人電力中央研究所 | ショットキー接合型半導体装置の製造方法 |
WO2005119793A2 (en) * | 2004-05-28 | 2005-12-15 | Caracal, Inc. | Silicon carbide schottky diodes and fabrication method |
EP1641029A1 (en) * | 2004-09-27 | 2006-03-29 | STMicroelectronics S.r.l. | Process for manufacturing a Schottky contact on a semiconductor substrate |
JP4814533B2 (ja) * | 2005-02-25 | 2011-11-16 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2007220889A (ja) | 2006-02-16 | 2007-08-30 | Central Res Inst Of Electric Power Ind | ショットキー接合型半導体素子およびその製造方法 |
-
2006
- 2006-10-18 JP JP2006283253A patent/JP5078314B2/ja active Active
-
2007
- 2007-10-18 US US11/975,366 patent/US7973318B2/en active Active
-
2011
- 2011-06-01 US US13/150,635 patent/US8441017B2/en active Active
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2013
- 2013-05-06 US US13/887,708 patent/US8679954B2/en active Active
Also Published As
Publication number | Publication date |
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US20130244409A1 (en) | 2013-09-19 |
US7973318B2 (en) | 2011-07-05 |
US8441017B2 (en) | 2013-05-14 |
US20110250736A1 (en) | 2011-10-13 |
US20090001382A1 (en) | 2009-01-01 |
US8679954B2 (en) | 2014-03-25 |
JP2008103436A (ja) | 2008-05-01 |
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