DE3381622D1 - Halbleiter-speicheranordnung. - Google Patents

Halbleiter-speicheranordnung.

Info

Publication number
DE3381622D1
DE3381622D1 DE8383303762T DE3381622T DE3381622D1 DE 3381622 D1 DE3381622 D1 DE 3381622D1 DE 8383303762 T DE8383303762 T DE 8383303762T DE 3381622 T DE3381622 T DE 3381622T DE 3381622 D1 DE3381622 D1 DE 3381622D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8383303762T
Other languages
English (en)
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3381622D1 publication Critical patent/DE3381622D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
DE8383303762T 1982-06-30 1983-06-29 Halbleiter-speicheranordnung. Expired - Fee Related DE3381622D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113239A JPS602782B2 (ja) 1982-06-30 1982-06-30 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3381622D1 true DE3381622D1 (de) 1990-07-05

Family

ID=14607089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383303762T Expired - Fee Related DE3381622D1 (de) 1982-06-30 1983-06-29 Halbleiter-speicheranordnung.

Country Status (4)

Country Link
US (1) US4635085A (de)
EP (1) EP0098165B1 (de)
JP (1) JPS602782B2 (de)
DE (1) DE3381622D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618257B2 (ja) * 1984-04-28 1994-03-09 富士通株式会社 半導体記憶装置の製造方法
EP0194682B1 (de) * 1985-03-13 1991-01-23 Kabushiki Kaisha Toshiba Halbleiterspeichervorrichtung
US4884238A (en) * 1988-03-09 1989-11-28 Honeywell Inc. Read-only memory
US5670816A (en) * 1989-04-07 1997-09-23 Kabushiki Kaisha Toshiba Semiconductor device
JPH079932B2 (ja) * 1989-04-07 1995-02-01 株式会社東芝 半導体装置
KR920009748B1 (ko) * 1990-05-31 1992-10-22 삼성전자 주식회사 적층형 캐패시터셀의 구조 및 제조방법
JP3212150B2 (ja) * 1992-08-07 2001-09-25 株式会社日立製作所 半導体装置
US5684314A (en) * 1996-03-18 1997-11-04 Kenney; Donald M. Trench capacitor precharge structure and leakage shield
JPH10223853A (ja) * 1997-02-04 1998-08-21 Mitsubishi Electric Corp 半導体装置
US5877051A (en) * 1997-08-22 1999-03-02 Micron Technology, Inc. Methods of reducing alpha particle inflicted damage to SRAM cells, methods of forming integrated circuitry, and methods of forming SRAM cells
KR100290787B1 (ko) 1998-12-26 2001-07-12 박종섭 반도체 메모리 소자의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS55146956A (en) * 1979-05-02 1980-11-15 Fujitsu Ltd Semiconductor element having function for avoiding generation of soft error due to alpha ray
JPS55156358A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5643753A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage
DE3173413D1 (en) * 1980-01-25 1986-02-20 Toshiba Kk Semiconductor memory device
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
JPS5832789B2 (ja) * 1980-07-18 1983-07-15 富士通株式会社 半導体メモリ
US4424526A (en) * 1981-05-29 1984-01-03 International Business Machines Corporation Structure for collection of ionization-induced excess minority carriers in a semiconductor substrate and method for the fabrication thereof

Also Published As

Publication number Publication date
JPS594156A (ja) 1984-01-10
JPS602782B2 (ja) 1985-01-23
US4635085A (en) 1987-01-06
EP0098165A3 (en) 1986-10-08
EP0098165B1 (de) 1990-05-30
EP0098165A2 (de) 1984-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee