DE3166545D1 - Method of manufacturing of a semiconductor device having an inset grid accessible from the surface - Google Patents
Method of manufacturing of a semiconductor device having an inset grid accessible from the surfaceInfo
- Publication number
- DE3166545D1 DE3166545D1 DE8181400494T DE3166545T DE3166545D1 DE 3166545 D1 DE3166545 D1 DE 3166545D1 DE 8181400494 T DE8181400494 T DE 8181400494T DE 3166545 T DE3166545 T DE 3166545T DE 3166545 D1 DE3166545 D1 DE 3166545D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- inset
- manufacturing
- grid
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Sustainable Development (AREA)
- Health & Medical Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Memories (AREA)
- Die Bonding (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8008270A FR2480501A1 (fr) | 1980-04-14 | 1980-04-14 | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3166545D1 true DE3166545D1 (en) | 1984-11-15 |
Family
ID=9240808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181400494T Expired - Lifetime DE3166545D1 (en) | 1980-04-14 | 1981-03-27 | Method of manufacturing of a semiconductor device having an inset grid accessible from the surface |
Country Status (6)
Country | Link |
---|---|
US (1) | US4520552A (de) |
EP (1) | EP0038238B1 (de) |
JP (1) | JPS56157058A (de) |
AT (1) | ATE9856T1 (de) |
DE (1) | DE3166545D1 (de) |
FR (1) | FR2480501A1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4983535A (en) * | 1981-10-15 | 1991-01-08 | Siliconix Incorporated | Vertical DMOS transistor fabrication process |
JPS5936971A (ja) * | 1982-08-26 | 1984-02-29 | Toyo Electric Mfg Co Ltd | 半導体装置の埋込みゲ−ト形成法 |
JPS5965481A (ja) * | 1982-10-06 | 1984-04-13 | Nec Corp | 半導体装置 |
US4661202A (en) * | 1984-02-14 | 1987-04-28 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US4688069A (en) * | 1984-03-22 | 1987-08-18 | International Business Machines Corporation | Isolation for high density integrated circuits |
DE3586735D1 (de) * | 1984-10-19 | 1992-11-12 | Bbc Brown Boveri & Cie | Abschaltbares leistungshalbleiterbauelement. |
US4616404A (en) * | 1984-11-30 | 1986-10-14 | Advanced Micro Devices, Inc. | Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects |
JPH0715989B2 (ja) * | 1984-12-24 | 1995-02-22 | 株式会社日立製作所 | 半導体装置 |
US4685198A (en) * | 1985-07-25 | 1987-08-11 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing isolated semiconductor devices |
US4689871A (en) * | 1985-09-24 | 1987-09-01 | Texas Instruments Incorporated | Method of forming vertically integrated current source |
US4745081A (en) * | 1985-10-31 | 1988-05-17 | International Business Machines Corporation | Method of trench filling |
US4711017A (en) * | 1986-03-03 | 1987-12-08 | Trw Inc. | Formation of buried diffusion devices |
US5034785A (en) * | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US4745087A (en) * | 1987-01-13 | 1988-05-17 | Advanced Micro Devices, Inc. | Method of making fully self-aligned bipolar transistor involving a polysilicon collector contact formed in a slot with an oxide sidewall |
US4799095A (en) * | 1987-07-06 | 1989-01-17 | General Electric Company | Metal oxide semiconductor gated turn off thyristor |
US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
US4845051A (en) * | 1987-10-29 | 1989-07-04 | Siliconix Incorporated | Buried gate JFET |
FR2624307B1 (fr) * | 1987-12-02 | 1990-05-18 | Rosencher Emmanuel | Transistor a base permeable |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US4839309A (en) * | 1988-03-30 | 1989-06-13 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
JP2593524B2 (ja) * | 1988-07-25 | 1997-03-26 | 株式会社東芝 | 半導体装置の製造方法 |
US5084418A (en) * | 1988-12-27 | 1992-01-28 | Texas Instruments Incorporated | Method of making an array device with buried interconnects |
JP2689606B2 (ja) * | 1989-05-24 | 1997-12-10 | 富士電機株式会社 | 絶縁ゲート電界効果型トランジスタの製造方法 |
US5213994A (en) * | 1989-05-30 | 1993-05-25 | Motorola, Inc. | Method of making high voltage semiconductor device |
JPH0330334A (ja) * | 1989-06-28 | 1991-02-08 | Toshiba Corp | バイポーラトランジスタの製造方法 |
US5066603A (en) * | 1989-09-06 | 1991-11-19 | Gte Laboratories Incorporated | Method of manufacturing static induction transistors |
US5077228A (en) * | 1989-12-01 | 1991-12-31 | Texas Instruments Incorporated | Process for simultaneous formation of trench contact and vertical transistor gate and structure |
US5179038A (en) * | 1989-12-22 | 1993-01-12 | North American Philips Corp., Signetics Division | High density trench isolation for MOS circuits |
US5595607A (en) * | 1991-12-09 | 1997-01-21 | Unisearch Limited | Buried contact interconnected thin film and bulk photovoltaic cells |
DE4300986C2 (de) * | 1992-01-17 | 1999-08-26 | Mitsubishi Electric Corp | Halbleitervorrichtung zur Elementisolierung und Herstellungsverfahren derselben |
JPH06342846A (ja) * | 1993-04-07 | 1994-12-13 | Mitsubishi Electric Corp | トレンチ分離構造を有する半導体装置およびその製造方法 |
US5369052A (en) * | 1993-12-06 | 1994-11-29 | Motorola, Inc. | Method of forming dual field oxide isolation |
US5554568A (en) * | 1994-12-27 | 1996-09-10 | United Microelectronics Corporation | Polysilicon trench and buried polysilicon wall device structures |
US5856700A (en) * | 1996-05-08 | 1999-01-05 | Harris Corporation | Semiconductor device with doped semiconductor and dielectric trench sidewall layers |
US5846865A (en) * | 1996-11-12 | 1998-12-08 | United Microelectronics Corp. | Method of fabricating flat-cell mask read-only memory (ROM) devices |
US6913955B1 (en) * | 2002-10-01 | 2005-07-05 | T-Ram, Inc. | Method of manufacturing a thyristor device with a control port in a trench |
US6878993B2 (en) * | 2002-12-20 | 2005-04-12 | Hamza Yilmaz | Self-aligned trench MOS junction field-effect transistor for high-frequency applications |
US7964499B2 (en) * | 2008-05-13 | 2011-06-21 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor solar cells having front surface electrodes |
US8293645B2 (en) * | 2010-06-30 | 2012-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming photovoltaic cell |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913124A (en) * | 1974-01-03 | 1975-10-14 | Motorola Inc | Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor |
JPS5368582A (en) * | 1976-11-30 | 1978-06-19 | Mitsubishi Electric Corp | Junction type field effect transistor |
JPS5368178A (en) * | 1976-11-30 | 1978-06-17 | Handotai Kenkyu Shinkokai | Fet transistor |
GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
JPS53147469A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Vertical field effect transistor and production of the same |
JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
JPS54117690A (en) * | 1978-03-03 | 1979-09-12 | Mitsubishi Electric Corp | Production of semiconductor device |
GB2026237A (en) * | 1978-07-19 | 1980-01-30 | Texas Instruments Ltd | Junction gate field effect transistors |
US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
-
1980
- 1980-04-14 FR FR8008270A patent/FR2480501A1/fr active Granted
-
1981
- 1981-03-27 DE DE8181400494T patent/DE3166545D1/de not_active Expired - Lifetime
- 1981-03-27 AT AT81400494T patent/ATE9856T1/de not_active IP Right Cessation
- 1981-03-27 EP EP81400494A patent/EP0038238B1/de not_active Expired
- 1981-04-14 JP JP5513781A patent/JPS56157058A/ja active Granted
-
1984
- 1984-01-16 US US06/571,095 patent/US4520552A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2480501A1 (fr) | 1981-10-16 |
EP0038238B1 (de) | 1984-10-10 |
EP0038238A1 (de) | 1981-10-21 |
JPS56157058A (en) | 1981-12-04 |
ATE9856T1 (de) | 1984-10-15 |
FR2480501B1 (de) | 1984-05-25 |
JPH0126183B2 (de) | 1989-05-22 |
US4520552A (en) | 1985-06-04 |
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