DE2254616C3 - Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm - Google Patents

Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm

Info

Publication number
DE2254616C3
DE2254616C3 DE2254616A DE2254616A DE2254616C3 DE 2254616 C3 DE2254616 C3 DE 2254616C3 DE 2254616 A DE2254616 A DE 2254616A DE 2254616 A DE2254616 A DE 2254616A DE 2254616 C3 DE2254616 C3 DE 2254616C3
Authority
DE
Germany
Prior art keywords
melt
crystal
crystalline body
film
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2254616A
Other languages
German (de)
English (en)
Other versions
DE2254616A1 (de
DE2254616B2 (de
Inventor
Charles J. Taunton Cronan
Harold E. Quincy Labelle Jun.
Abraham I. Lincoln Mlavsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of DE2254616A1 publication Critical patent/DE2254616A1/de
Publication of DE2254616B2 publication Critical patent/DE2254616B2/de
Application granted granted Critical
Publication of DE2254616C3 publication Critical patent/DE2254616C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2254616A 1971-11-08 1972-11-08 Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm Expired DE2254616C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00196449A US3846082A (en) 1971-11-08 1971-11-08 Production of crystalline bodies of complex geometries

Publications (3)

Publication Number Publication Date
DE2254616A1 DE2254616A1 (de) 1973-05-10
DE2254616B2 DE2254616B2 (de) 1974-11-28
DE2254616C3 true DE2254616C3 (de) 1975-07-10

Family

ID=22725468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2254616A Expired DE2254616C3 (de) 1971-11-08 1972-11-08 Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm

Country Status (11)

Country Link
US (1) US3846082A (fr)
JP (1) JPS5215075B2 (fr)
BE (1) BE791024A (fr)
BR (1) BR7207786D0 (fr)
CA (1) CA974859A (fr)
CH (1) CH576283A5 (fr)
DE (1) DE2254616C3 (fr)
FR (1) FR2159339B1 (fr)
GB (1) GB1382529A (fr)
IT (1) IT973428B (fr)
NL (1) NL7215097A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
JPS55144338A (en) * 1979-03-20 1980-11-11 Aida Eng Ltd Transfer driving device
US4612972A (en) * 1982-01-04 1986-09-23 Olin Corporation Method and apparatus for electro-magnetic casting of complex shapes
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
EP0309540B1 (fr) * 1987-03-27 1993-10-06 Mobil Solar Energy Corporation Dispositif et procede de croissance de cristaux par alimentation de couche avec controle de surface
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
US5346883A (en) * 1987-08-21 1994-09-13 The Furukawa Electric Co., Ltd. Method of manufacturing superconductive products
WO1992001091A1 (fr) * 1990-07-10 1992-01-23 Saphikon, Inc. Appareil utilise dans la croissance de corps cristallins creux a partir d'un bain de fusion
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
WO1992003204A1 (fr) * 1990-08-15 1992-03-05 Mobil Solar Energy Corporation Procede de croissance de corps cristallins tubulaires et cylindriques
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
FR2712608B1 (fr) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
US6722873B2 (en) * 2001-09-10 2004-04-20 Recot, Inc. Apparatus for producing a curly puff extrudate
US20050034581A1 (en) * 2003-08-12 2005-02-17 Eugenio Bortone Method and apparatus for cutting a curly puff extrudate
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
BRPI0611917A2 (pt) 2005-06-10 2010-10-05 Saint Gobain Ceramics compostos cerámico transparente
CA2663382C (fr) * 2006-09-22 2012-04-24 Saint-Gobain Ceramics & Plastics, Inc. Procede et appareil a saphir dans le plan c
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
RU2451117C2 (ru) * 2010-06-09 2012-05-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Устройство для выращивания профилированных кристаллов в виде полых тел вращения
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1141977B (de) * 1958-11-17 1963-01-03 Siemens Ag Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze
CH399744A (de) * 1960-05-02 1965-09-30 Rca Corp Verfahren zur Erzeugung eines Einkristalls
FR1581098A (fr) * 1967-05-29 1969-09-12
DE1935372A1 (de) * 1969-07-11 1971-01-21 Tyco Laboratories Inc Verfahren und Vorrichtung zum Zuechten kristalliner Materialien in Form langgestreckter Koerper

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (de) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
NL238924A (fr) * 1959-05-05
BE638262A (fr) * 1962-10-18
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE1519897B2 (de) * 1966-08-06 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1141977B (de) * 1958-11-17 1963-01-03 Siemens Ag Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze
CH399744A (de) * 1960-05-02 1965-09-30 Rca Corp Verfahren zur Erzeugung eines Einkristalls
FR1581098A (fr) * 1967-05-29 1969-09-12
DE1769481A1 (de) * 1967-05-29 1970-12-23 Tyco Laboratories Inc Verfahren zur Herstellung von ausgedehnten Faeden aus anorganischen temperaturbestaendigen Stoffen aus der Schmelze
DE1935372A1 (de) * 1969-07-11 1971-01-21 Tyco Laboratories Inc Verfahren und Vorrichtung zum Zuechten kristalliner Materialien in Form langgestreckter Koerper

Also Published As

Publication number Publication date
CH576283A5 (fr) 1976-06-15
FR2159339B1 (fr) 1977-07-29
JPS4875482A (fr) 1973-10-11
CA974859A (en) 1975-09-23
BR7207786D0 (pt) 1973-09-27
GB1382529A (en) 1975-02-05
FR2159339A1 (fr) 1973-06-22
BE791024A (fr) 1973-05-07
NL7215097A (fr) 1973-05-10
US3846082A (en) 1974-11-05
DE2254616A1 (de) 1973-05-10
IT973428B (it) 1974-06-10
DE2254616B2 (de) 1974-11-28
JPS5215075B2 (fr) 1977-04-26

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8327 Change in the person/name/address of the patent owner

Owner name: SAPHIKON, INC., MILFORD, N.H., US

8328 Change in the person/name/address of the agent

Free format text: WALLACH, C., DIPL.-ING. KOCH, G., DIPL.-ING. HAIBACH, T., DIPL.-PHYS. DR.RER.NAT. FELDKAMP, R., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN