DE2254616C3 - Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm - Google Patents
Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem SchmelzfilmInfo
- Publication number
- DE2254616C3 DE2254616C3 DE2254616A DE2254616A DE2254616C3 DE 2254616 C3 DE2254616 C3 DE 2254616C3 DE 2254616 A DE2254616 A DE 2254616A DE 2254616 A DE2254616 A DE 2254616A DE 2254616 C3 DE2254616 C3 DE 2254616C3
- Authority
- DE
- Germany
- Prior art keywords
- melt
- crystal
- crystalline body
- film
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00196449A US3846082A (en) | 1971-11-08 | 1971-11-08 | Production of crystalline bodies of complex geometries |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2254616A1 DE2254616A1 (de) | 1973-05-10 |
DE2254616B2 DE2254616B2 (de) | 1974-11-28 |
DE2254616C3 true DE2254616C3 (de) | 1975-07-10 |
Family
ID=22725468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2254616A Expired DE2254616C3 (de) | 1971-11-08 | 1972-11-08 | Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm |
Country Status (11)
Country | Link |
---|---|
US (1) | US3846082A (fr) |
JP (1) | JPS5215075B2 (fr) |
BE (1) | BE791024A (fr) |
BR (1) | BR7207786D0 (fr) |
CA (1) | CA974859A (fr) |
CH (1) | CH576283A5 (fr) |
DE (1) | DE2254616C3 (fr) |
FR (1) | FR2159339B1 (fr) |
GB (1) | GB1382529A (fr) |
IT (1) | IT973428B (fr) |
NL (1) | NL7215097A (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5567596A (en) * | 1978-11-10 | 1980-05-21 | Hitachi Ltd | Single crystal growing method |
JPS55144338A (en) * | 1979-03-20 | 1980-11-11 | Aida Eng Ltd | Transfer driving device |
US4612972A (en) * | 1982-01-04 | 1986-09-23 | Olin Corporation | Method and apparatus for electro-magnetic casting of complex shapes |
US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
EP0309540B1 (fr) * | 1987-03-27 | 1993-10-06 | Mobil Solar Energy Corporation | Dispositif et procede de croissance de cristaux par alimentation de couche avec controle de surface |
US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
US5346883A (en) * | 1987-08-21 | 1994-09-13 | The Furukawa Electric Co., Ltd. | Method of manufacturing superconductive products |
WO1992001091A1 (fr) * | 1990-07-10 | 1992-01-23 | Saphikon, Inc. | Appareil utilise dans la croissance de corps cristallins creux a partir d'un bain de fusion |
US5114528A (en) * | 1990-08-07 | 1992-05-19 | Wisconsin Alumni Research Foundation | Edge-defined contact heater apparatus and method for floating zone crystal growth |
WO1992003204A1 (fr) * | 1990-08-15 | 1992-03-05 | Mobil Solar Energy Corporation | Procede de croissance de corps cristallins tubulaires et cylindriques |
US5266151A (en) * | 1992-03-04 | 1993-11-30 | Advanced Crystal Products Corporation | Inside edge defined, self-filling (IESF) die for crystal growth |
US5370078A (en) * | 1992-12-01 | 1994-12-06 | Wisconsin Alumni Research Foundation | Method and apparatus for crystal growth with shape and segregation control |
FR2712608B1 (fr) * | 1993-11-16 | 1996-01-12 | Commissariat Energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu. |
US5487353A (en) * | 1994-02-14 | 1996-01-30 | General Electric Company | Conversion of doped polycrystalline material to single crystal |
US6722873B2 (en) * | 2001-09-10 | 2004-04-20 | Recot, Inc. | Apparatus for producing a curly puff extrudate |
US20050034581A1 (en) * | 2003-08-12 | 2005-02-17 | Eugenio Bortone | Method and apparatus for cutting a curly puff extrudate |
US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
US7348076B2 (en) * | 2004-04-08 | 2008-03-25 | Saint-Gobain Ceramics & Plastics, Inc. | Single crystals and methods for fabricating same |
BRPI0611917A2 (pt) | 2005-06-10 | 2010-10-05 | Saint Gobain Ceramics | compostos cerámico transparente |
CA2663382C (fr) * | 2006-09-22 | 2012-04-24 | Saint-Gobain Ceramics & Plastics, Inc. | Procede et appareil a saphir dans le plan c |
US20090130415A1 (en) * | 2007-11-21 | 2009-05-21 | Saint-Gobain Ceramics & Plastics, Inc. | R-Plane Sapphire Method and Apparatus |
RU2451117C2 (ru) * | 2010-06-09 | 2012-05-20 | Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук | Устройство для выращивания профилированных кристаллов в виде полых тел вращения |
US11047650B2 (en) | 2017-09-29 | 2021-06-29 | Saint-Gobain Ceramics & Plastics, Inc. | Transparent composite having a laminated structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1141977B (de) * | 1958-11-17 | 1963-01-03 | Siemens Ag | Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze |
CH399744A (de) * | 1960-05-02 | 1965-09-30 | Rca Corp | Verfahren zur Erzeugung eines Einkristalls |
FR1581098A (fr) * | 1967-05-29 | 1969-09-12 | ||
DE1935372A1 (de) * | 1969-07-11 | 1971-01-21 | Tyco Laboratories Inc | Verfahren und Vorrichtung zum Zuechten kristalliner Materialien in Form langgestreckter Koerper |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1066564B (de) * | 1959-10-08 | Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München | Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen | |
US3031275A (en) * | 1959-02-20 | 1962-04-24 | Shockley William | Process for growing single crystals |
NL238924A (fr) * | 1959-05-05 | |||
BE638262A (fr) * | 1962-10-18 | |||
US3370927A (en) * | 1966-02-28 | 1968-02-27 | Westinghouse Electric Corp | Method of angularly pulling continuous dendritic crystals |
DE1519897B2 (de) * | 1966-08-06 | 1974-07-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
-
0
- BE BE791024D patent/BE791024A/fr not_active IP Right Cessation
-
1971
- 1971-11-08 US US00196449A patent/US3846082A/en not_active Expired - Lifetime
-
1972
- 1972-10-30 GB GB4986172A patent/GB1382529A/en not_active Expired
- 1972-11-07 BR BR7786/72A patent/BR7207786D0/pt unknown
- 1972-11-07 IT IT53863/72A patent/IT973428B/it active
- 1972-11-07 FR FR7239404A patent/FR2159339B1/fr not_active Expired
- 1972-11-07 CA CA155,843A patent/CA974859A/en not_active Expired
- 1972-11-08 JP JP47111956A patent/JPS5215075B2/ja not_active Expired
- 1972-11-08 NL NL7215097A patent/NL7215097A/xx unknown
- 1972-11-08 CH CH1625772A patent/CH576283A5/xx not_active IP Right Cessation
- 1972-11-08 DE DE2254616A patent/DE2254616C3/de not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1141977B (de) * | 1958-11-17 | 1963-01-03 | Siemens Ag | Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze |
CH399744A (de) * | 1960-05-02 | 1965-09-30 | Rca Corp | Verfahren zur Erzeugung eines Einkristalls |
FR1581098A (fr) * | 1967-05-29 | 1969-09-12 | ||
DE1769481A1 (de) * | 1967-05-29 | 1970-12-23 | Tyco Laboratories Inc | Verfahren zur Herstellung von ausgedehnten Faeden aus anorganischen temperaturbestaendigen Stoffen aus der Schmelze |
DE1935372A1 (de) * | 1969-07-11 | 1971-01-21 | Tyco Laboratories Inc | Verfahren und Vorrichtung zum Zuechten kristalliner Materialien in Form langgestreckter Koerper |
Also Published As
Publication number | Publication date |
---|---|
CH576283A5 (fr) | 1976-06-15 |
FR2159339B1 (fr) | 1977-07-29 |
JPS4875482A (fr) | 1973-10-11 |
CA974859A (en) | 1975-09-23 |
BR7207786D0 (pt) | 1973-09-27 |
GB1382529A (en) | 1975-02-05 |
FR2159339A1 (fr) | 1973-06-22 |
BE791024A (fr) | 1973-05-07 |
NL7215097A (fr) | 1973-05-10 |
US3846082A (en) | 1974-11-05 |
DE2254616A1 (de) | 1973-05-10 |
IT973428B (it) | 1974-06-10 |
DE2254616B2 (de) | 1974-11-28 |
JPS5215075B2 (fr) | 1977-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C3 | Grant after two publication steps (3rd publication) | ||
E77 | Valid patent as to the heymanns-index 1977 | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SAPHIKON, INC., MILFORD, N.H., US |
|
8328 | Change in the person/name/address of the agent |
Free format text: WALLACH, C., DIPL.-ING. KOCH, G., DIPL.-ING. HAIBACH, T., DIPL.-PHYS. DR.RER.NAT. FELDKAMP, R., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |