DE1276817B - Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute - Google Patents

Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute

Info

Publication number: DE1276817B
Authority: DE; Germany
Prior art keywords: light emitting; emitting diode; semiconductor light; light; high luminous
Prior art date: 1966-02-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

DE1966S0102022

Other languages

German (de)

English (en)

Inventor

Dr Manfred Zerbst

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee

Siemens AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1966-02-15

Filing date

1966-02-15

Publication date

1968-09-05

1966-02-15 Application filed by Siemens AG filed Critical Siemens AG

1966-02-15 Priority to DE1966S0102022 priority Critical patent/DE1276817B/de

1966-12-09 Priority to NL6617366A priority patent/NL6617366A/xx

1967-02-13 Priority to AT138767A priority patent/AT269237B/de

1967-02-14 Priority to GB696367A priority patent/GB1148110A/en

1967-02-14 Priority to CH218367A priority patent/CH450548A/de

1967-02-15 Priority to SE2126/67A priority patent/SE323145B/xx

1967-02-15 Priority to JP931167A priority patent/JPS5234908B1/ja

1967-02-15 Priority to FR95070A priority patent/FR1511464A/fr

1968-09-05 Publication of DE1276817B publication Critical patent/DE1276817B/de

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 24
239000002800 charge carrier Substances 0.000 description 8
239000012212 insulator Substances 0.000 description 7
230000004888 barrier function Effects 0.000 description 5
239000000463 material Substances 0.000 description 5
239000000969 carrier Substances 0.000 description 4
238000004020 luminiscence type Methods 0.000 description 4
230000005855 radiation Effects 0.000 description 4
230000006798 recombination Effects 0.000 description 4
238000005215 recombination Methods 0.000 description 4
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
229910006404 SnO 2 Inorganic materials 0.000 description 2
230000009102 absorption Effects 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000005275 alloying Methods 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
238000000034 method Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000035515 penetration Effects 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
230000009103 reabsorption Effects 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000011144 upstream manufacturing Methods 0.000 description 1
238000004018 waxing Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Electroluminescent Light Sources (AREA)

DE1966S0102022 1966-02-15 1966-02-15 Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute Pending DE1276817B (de)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
DE1966S0102022 DE1276817B (de)	1966-02-15	1966-02-15	Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute
NL6617366A NL6617366A (xx)	1966-02-15	1966-12-09
AT138767A AT269237B (de)	1966-02-15	1967-02-13	Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute
GB696367A GB1148110A (en)	1966-02-15	1967-02-14	Improvements in or relating to luminescence diodes
CH218367A CH450548A (de)	1966-02-15	1967-02-14	Lumineszenzdiode sehr hoher Lichtausbeute und Verfahren zum Betrieb einer solchen Lumineszenzdiode
SE2126/67A SE323145B (xx)	1966-02-15	1967-02-15
JP931167A JPS5234908B1 (xx)	1966-02-15	1967-02-15
FR95070A FR1511464A (fr)	1966-02-15	1967-02-15	Diode électroluminescente à semi-conducteurs

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE1966S0102022 DE1276817B (de)	1966-02-15	1966-02-15	Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute

Publications (1)

Publication Number	Publication Date
DE1276817B true DE1276817B (de)	1968-09-05

Family

ID=7524144

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE1966S0102022 Pending DE1276817B (de)	1966-02-15	1966-02-15	Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute

Country Status (8)

Country	Link
JP (1)	JPS5234908B1 (xx)
AT (1)	AT269237B (xx)
CH (1)	CH450548A (xx)
DE (1)	DE1276817B (xx)
FR (1)	FR1511464A (xx)
GB (1)	GB1148110A (xx)
NL (1)	NL6617366A (xx)
SE (1)	SE323145B (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6259703B1 (en)	1993-10-22	2001-07-10	Mitel Corporation	Time slot assigner for communication system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB765076A (en) *	1953-12-29	1957-01-02	British Thomson Houston Co Ltd	Improvements in electro-luminescent devices
US2880346A (en) *	1954-09-30	1959-03-31	Rca Corp	Electroluminescent device
DE1194976B (de) *	1963-02-25	1965-06-16	Siemens Ag	Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich
DE1219121B (de) *	1963-02-25	1966-06-16	Rca Corp	Elektrolumineszente Halbleiter-Leuchtflaeche

1966
- 1966-02-15 DE DE1966S0102022 patent/DE1276817B/de active Pending
- 1966-12-09 NL NL6617366A patent/NL6617366A/xx unknown
1967
- 1967-02-13 AT AT138767A patent/AT269237B/de active
- 1967-02-14 CH CH218367A patent/CH450548A/de unknown
- 1967-02-14 GB GB696367A patent/GB1148110A/en not_active Expired
- 1967-02-15 SE SE2126/67A patent/SE323145B/xx unknown
- 1967-02-15 FR FR95070A patent/FR1511464A/fr not_active Expired
- 1967-02-15 JP JP931167A patent/JPS5234908B1/ja active Pending

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB765076A (en) *	1953-12-29	1957-01-02	British Thomson Houston Co Ltd	Improvements in electro-luminescent devices
US2880346A (en) *	1954-09-30	1959-03-31	Rca Corp	Electroluminescent device
DE1194976B (de) *	1963-02-25	1965-06-16	Siemens Ag	Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich
DE1219121B (de) *	1963-02-25	1966-06-16	Rca Corp	Elektrolumineszente Halbleiter-Leuchtflaeche

Also Published As

Publication number	Publication date
NL6617366A (xx)	1967-08-16
GB1148110A (en)	1969-04-10
JPS5234908B1 (xx)	1977-09-06
SE323145B (xx)	1970-04-27
CH450548A (de)	1968-01-31
AT269237B (de)	1969-03-10
FR1511464A (fr)	1968-01-26

Legal Events

Date	Code	Title	Description
1977-12-31	E771	Valid patent as to the heymanns-index 1977, willingness to grant licences

Publication	Publication Date	Title
DE3011484C2 (de)	1986-09-04	Optisch steuerbare Halbleitervorrichtung
DE891580C (de)	1953-10-29	Lichtelektrische Halbleitereinrichtungen
DE102011112000A1 (de)	2013-02-28	Leuchtdiodenchip
DE2408079A1 (de)	1975-07-24	Thyristor
DE102007044439A1 (de)	2009-03-19	Optoelektronischer Halbleiterchip mit Quantentopfstruktur
DE1219121B (de)	1966-06-16	Elektrolumineszente Halbleiter-Leuchtflaeche
DE102019211971B4 (de)	2024-06-06	Halbleitermodul
WO2018228993A1 (de)	2018-12-20	Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
DE3102930A1 (de)	1982-03-04	Generator fuer langwellige elektromagnetische infrarotwellen
DE1276817B (de)	1968-09-05	Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute
DE102012105630B4 (de)	2023-04-20	Beleuchtungsanordnung mit Beleuchtungsvorrichtung und Verfahren zum Betreiben einer Beleuchtungsvorrichtung
WO2016166154A1 (de)	2016-10-20	Strahlungsemittierendes halbleiterbauelement
DE102017103856A1 (de)	2018-08-30	Optoelektronischer Halbleiterchip
DE1220888B (de)	1966-07-14	Saegezahnspannungsoszillator mit Photowiderstand
EP2497125B1 (de)	2018-10-10	Halbleiterdiode und verfahren zum herstellen einer halbleiterdiode
DE2461190C2 (xx)	1987-10-15
DE2504775C3 (de)	1981-03-26	Lumineszenzdiode
DE2633038A1 (de)	1977-02-10	Elektrolumineszierende vorrichtung
DE1564142A1 (de)	1970-01-08	Elektrolumineszentes Halbleiterbauelement
EP0173275A2 (de)	1986-03-05	Lichtzündbarer Thyristor
WO2016174240A1 (de)	2016-11-03	Kantenemittierender halbleiterlaser mit tunnelkontakt
DE1255199B (de)	1967-11-30	Elektrolumineszenter Leuchtstoffkoerper
DE1220950B (de)	1966-07-14	Optischer Sender oder Verstaerker mit einer in Durchlassrichtung vorgespannten Halbleiterdiode
DE1258515B (de)	1968-01-11	AB-Lumineszenzdiode mit Traegerkristall í¬ insbesondere auf GaAs-Basisí¬mit hoher Lichtausbeute
DE1277457B (de)	1968-09-12	Strahlungsnachweisgeraet