DE1276817B - Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute - Google Patents
Halbleiter-Lumineszenzdiode sehr hoher LichtausbeuteInfo
- Publication number
- DE1276817B DE1276817B DE1966S0102022 DES0102022A DE1276817B DE 1276817 B DE1276817 B DE 1276817B DE 1966S0102022 DE1966S0102022 DE 1966S0102022 DE S0102022 A DES0102022 A DE S0102022A DE 1276817 B DE1276817 B DE 1276817B
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting diode
- semiconductor light
- light
- high luminous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000002800 charge carrier Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1966S0102022 DE1276817B (de) | 1966-02-15 | 1966-02-15 | Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute |
NL6617366A NL6617366A (xx) | 1966-02-15 | 1966-12-09 | |
AT138767A AT269237B (de) | 1966-02-15 | 1967-02-13 | Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute |
GB696367A GB1148110A (en) | 1966-02-15 | 1967-02-14 | Improvements in or relating to luminescence diodes |
CH218367A CH450548A (de) | 1966-02-15 | 1967-02-14 | Lumineszenzdiode sehr hoher Lichtausbeute und Verfahren zum Betrieb einer solchen Lumineszenzdiode |
SE2126/67A SE323145B (xx) | 1966-02-15 | 1967-02-15 | |
JP931167A JPS5234908B1 (xx) | 1966-02-15 | 1967-02-15 | |
FR95070A FR1511464A (fr) | 1966-02-15 | 1967-02-15 | Diode électroluminescente à semi-conducteurs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1966S0102022 DE1276817B (de) | 1966-02-15 | 1966-02-15 | Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1276817B true DE1276817B (de) | 1968-09-05 |
Family
ID=7524144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1966S0102022 Pending DE1276817B (de) | 1966-02-15 | 1966-02-15 | Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5234908B1 (xx) |
AT (1) | AT269237B (xx) |
CH (1) | CH450548A (xx) |
DE (1) | DE1276817B (xx) |
FR (1) | FR1511464A (xx) |
GB (1) | GB1148110A (xx) |
NL (1) | NL6617366A (xx) |
SE (1) | SE323145B (xx) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6259703B1 (en) | 1993-10-22 | 2001-07-10 | Mitel Corporation | Time slot assigner for communication system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB765076A (en) * | 1953-12-29 | 1957-01-02 | British Thomson Houston Co Ltd | Improvements in electro-luminescent devices |
US2880346A (en) * | 1954-09-30 | 1959-03-31 | Rca Corp | Electroluminescent device |
DE1194976B (de) * | 1963-02-25 | 1965-06-16 | Siemens Ag | Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich |
DE1219121B (de) * | 1963-02-25 | 1966-06-16 | Rca Corp | Elektrolumineszente Halbleiter-Leuchtflaeche |
-
1966
- 1966-02-15 DE DE1966S0102022 patent/DE1276817B/de active Pending
- 1966-12-09 NL NL6617366A patent/NL6617366A/xx unknown
-
1967
- 1967-02-13 AT AT138767A patent/AT269237B/de active
- 1967-02-14 CH CH218367A patent/CH450548A/de unknown
- 1967-02-14 GB GB696367A patent/GB1148110A/en not_active Expired
- 1967-02-15 SE SE2126/67A patent/SE323145B/xx unknown
- 1967-02-15 FR FR95070A patent/FR1511464A/fr not_active Expired
- 1967-02-15 JP JP931167A patent/JPS5234908B1/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB765076A (en) * | 1953-12-29 | 1957-01-02 | British Thomson Houston Co Ltd | Improvements in electro-luminescent devices |
US2880346A (en) * | 1954-09-30 | 1959-03-31 | Rca Corp | Electroluminescent device |
DE1194976B (de) * | 1963-02-25 | 1965-06-16 | Siemens Ag | Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich |
DE1219121B (de) * | 1963-02-25 | 1966-06-16 | Rca Corp | Elektrolumineszente Halbleiter-Leuchtflaeche |
Also Published As
Publication number | Publication date |
---|---|
NL6617366A (xx) | 1967-08-16 |
GB1148110A (en) | 1969-04-10 |
JPS5234908B1 (xx) | 1977-09-06 |
SE323145B (xx) | 1970-04-27 |
CH450548A (de) | 1968-01-31 |
AT269237B (de) | 1969-03-10 |
FR1511464A (fr) | 1968-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences |