GB1148110A - Improvements in or relating to luminescence diodes - Google Patents
Improvements in or relating to luminescence diodesInfo
- Publication number
- GB1148110A GB1148110A GB696367A GB696367A GB1148110A GB 1148110 A GB1148110 A GB 1148110A GB 696367 A GB696367 A GB 696367A GB 696367 A GB696367 A GB 696367A GB 1148110 A GB1148110 A GB 1148110A
- Authority
- GB
- United Kingdom
- Prior art keywords
- potential
- layer
- oxide
- feb
- instance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004020 luminiscence type Methods 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 abstract 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
1,148,110. Electroluminescence. SIEMENS A.G. 14 Feb., 1967 [15 Feb., 1966], No. 6963/67. Heading C4S. A luminescent diode comprises a semiconductor body 1, preferably a doped A<SP>III</SP>B<SP>v</SP> material such as GaAs), a transparent insulating layer 2 (preferably silicon dioxide or monoxide, calcium fluoride or aluminium oxide for instance) deposited on one surface of body 1, and a transparent electrically conductive layer 3 (a mesh or solid plate of stannic oxide preferably, or indium sesquioxide, cadmium oxide and zinc oxide) formed on the side of said insulating layer remote from said semi-conductor body, separate ohmic connecting electrodes 5, 6 being provided for body 1 and layer 3 so that an applied potential difference causes minority and majority carriers to collect at the two opposite faces of layer 2, recombination occurring at the said semi-conductor body surface on reduction of the potential. Pulsed radiation may be produced by alternately increasing and decreasing the applied voltage, also an applied D.C. potential may be superimposed by an amplitude modulated A.C. potential of equal or less amplitude for the transmission of messages for instance.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1966S0102022 DE1276817B (en) | 1966-02-15 | 1966-02-15 | Semiconductor light emitting diode with very high luminous efficacy |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1148110A true GB1148110A (en) | 1969-04-10 |
Family
ID=7524144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB696367A Expired GB1148110A (en) | 1966-02-15 | 1967-02-14 | Improvements in or relating to luminescence diodes |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5234908B1 (en) |
AT (1) | AT269237B (en) |
CH (1) | CH450548A (en) |
DE (1) | DE1276817B (en) |
FR (1) | FR1511464A (en) |
GB (1) | GB1148110A (en) |
NL (1) | NL6617366A (en) |
SE (1) | SE323145B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6259703B1 (en) | 1993-10-22 | 2001-07-10 | Mitel Corporation | Time slot assigner for communication system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB765076A (en) * | 1953-12-29 | 1957-01-02 | British Thomson Houston Co Ltd | Improvements in electro-luminescent devices |
US2880346A (en) * | 1954-09-30 | 1959-03-31 | Rca Corp | Electroluminescent device |
US3267317A (en) * | 1963-02-25 | 1966-08-16 | Rca Corp | Device for producing recombination radiation |
DE1194976B (en) * | 1963-02-25 | 1965-06-16 | Siemens Ag | Semiconductor diode recombination emitters for the optical sector |
-
1966
- 1966-02-15 DE DE1966S0102022 patent/DE1276817B/en active Pending
- 1966-12-09 NL NL6617366A patent/NL6617366A/xx unknown
-
1967
- 1967-02-13 AT AT138767A patent/AT269237B/en active
- 1967-02-14 GB GB696367A patent/GB1148110A/en not_active Expired
- 1967-02-14 CH CH218367A patent/CH450548A/en unknown
- 1967-02-15 FR FR95070A patent/FR1511464A/en not_active Expired
- 1967-02-15 SE SE2126/67A patent/SE323145B/xx unknown
- 1967-02-15 JP JP931167A patent/JPS5234908B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CH450548A (en) | 1968-01-31 |
SE323145B (en) | 1970-04-27 |
DE1276817B (en) | 1968-09-05 |
JPS5234908B1 (en) | 1977-09-06 |
FR1511464A (en) | 1968-01-26 |
AT269237B (en) | 1969-03-10 |
NL6617366A (en) | 1967-08-16 |
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