DE112015000850A5 - Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement - Google Patents

Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement Download PDF

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Publication number
DE112015000850A5
DE112015000850A5 DE112015000850.0T DE112015000850T DE112015000850A5 DE 112015000850 A5 DE112015000850 A5 DE 112015000850A5 DE 112015000850 T DE112015000850 T DE 112015000850T DE 112015000850 A5 DE112015000850 A5 DE 112015000850A5
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production
semiconductor
semiconductor device
semiconductor devices
devices
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DE112015000850.0T
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DE112015000850B4 (de
Inventor
Norwin Von Malm
Alexander F. Pfeuffer
Tansen Varghese
Philipp Kreuter
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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    • H01L2933/0016—Processes relating to electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
  • Drying Of Semiconductors (AREA)
DE112015000850.0T 2014-02-18 2015-02-17 Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen und Halbleiterbauelement Active DE112015000850B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014102029.4A DE102014102029A1 (de) 2014-02-18 2014-02-18 Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102014102029.4 2014-02-18
PCT/EP2015/053278 WO2015124551A1 (de) 2014-02-18 2015-02-17 Verfahren zur herstellung von halbleiterbauelementen und halbleiterbauelement

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DE112015000850A5 true DE112015000850A5 (de) 2016-11-10
DE112015000850B4 DE112015000850B4 (de) 2022-03-24

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DE102014102029.4A Withdrawn DE102014102029A1 (de) 2014-02-18 2014-02-18 Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE112015000850.0T Active DE112015000850B4 (de) 2014-02-18 2015-02-17 Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen und Halbleiterbauelement

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Country Link
US (1) US10074766B2 (de)
JP (1) JP2017512380A (de)
CN (1) CN106062976B (de)
DE (2) DE102014102029A1 (de)
WO (1) WO2015124551A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102015116865A1 (de) 2015-10-05 2017-04-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip
WO2017087315A1 (en) 2015-11-20 2017-05-26 Koninklijke Philips N.V. Contact etching and metallization for improved led device performance and reliability
DE102016106831A1 (de) 2016-04-13 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN106611804B (zh) * 2016-12-28 2017-12-08 合肥海润光伏科技有限公司 一种全钝化太阳能电池结构
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