DE10207330A1 - Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch eine Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet - Google Patents
Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch eine Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltetInfo
- Publication number
- DE10207330A1 DE10207330A1 DE10207330A DE10207330A DE10207330A1 DE 10207330 A1 DE10207330 A1 DE 10207330A1 DE 10207330 A DE10207330 A DE 10207330A DE 10207330 A DE10207330 A DE 10207330A DE 10207330 A1 DE10207330 A1 DE 10207330A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resonator
- electrode
- thickness
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title abstract description 10
- 238000011410 subtraction method Methods 0.000 title 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims 1
- 238000003801 milling Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 129
- 239000000463 material Substances 0.000 description 35
- 239000012792 core layer Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 241000599985 Beijerinckia mobilis Species 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/10—Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (17)
Erzeugen einer unteren Elektrodenschicht (172);
Erzeugen einer piezoelektrischen (PZ-)Schicht (174) über der unteren Elektrodenschicht (172);
teilweises Ätzen eines ausgewählten Teils (169) der PZ-Schicht; und
Erzeugen einer oberen Elektrode (176) über dem ausge wählten Teil (169) der PZ-Schicht (174).
Maskieren der PZ-Schicht (174) mit Ausnahme des ausge wählten Teils (169);
Aussetzen der Maske und des ausgewählten Teils (169) gegenüber einem Ätzmittel; und
Entfernen der Maske.
Aufbringen einer unteren Elektrode (172) auf das Sub strat (161);
Aufbringen einer piezoelektrischen (PZ-)Schicht (174);
Reduzieren der Dicke der PZ-Schicht, um die Resonanz frequenz des Resonators (170) einzustellen; und
Aufbringen einer oberen Elektrode (176).
Maskieren der PZ-Schicht (174) mit Ausnahme eines aus gewählten Teils (169) der PZ-Schicht;
Aussetzen der Maske und des ausgewählten Teils (169) gegenüber einem Ätzmittel; und
Entfernen der Maske.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/799,202 US6787048B2 (en) | 2001-03-05 | 2001-03-05 | Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
US09/799,202 | 2001-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10207330A1 true DE10207330A1 (de) | 2002-09-26 |
DE10207330B4 DE10207330B4 (de) | 2009-05-20 |
Family
ID=25175282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10207330A Expired - Fee Related DE10207330B4 (de) | 2001-03-05 | 2002-02-21 | Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet |
Country Status (3)
Country | Link |
---|---|
US (1) | US6787048B2 (de) |
JP (1) | JP2002344270A (de) |
DE (1) | DE10207330B4 (de) |
Families Citing this family (46)
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JP4434537B2 (ja) * | 2001-08-27 | 2010-03-17 | パナソニック株式会社 | 圧電機能部品 |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
EP1489740A3 (de) * | 2003-06-18 | 2006-06-28 | Matsushita Electric Industrial Co., Ltd. | Elektronisches Bauelement und Verfahren zur Herstellung desselben |
JP4657660B2 (ja) * | 2003-09-12 | 2011-03-23 | パナソニック株式会社 | 薄膜バルク音響共振器、その製造方法、フィルタ、複合電子部品および通信機器 |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
US7443269B2 (en) * | 2005-07-27 | 2008-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit |
US7183698B1 (en) * | 2005-08-29 | 2007-02-27 | Zippy Technology Corp. | Piezoelectric structure |
US7868522B2 (en) | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
US7675390B2 (en) | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7463499B2 (en) | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
US7586392B2 (en) * | 2006-01-23 | 2009-09-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Dual path acoustic data coupling system and method |
US7514844B2 (en) * | 2006-01-23 | 2009-04-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic data coupling system and method |
US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
US7629865B2 (en) * | 2006-05-31 | 2009-12-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters |
US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
US7732977B2 (en) | 2008-04-30 | 2010-06-08 | Avago Technologies Wireless Ip (Singapore) | Transceiver circuit for film bulk acoustic resonator (FBAR) transducers |
JP2010045533A (ja) * | 2008-08-11 | 2010-02-25 | Fujitsu Ltd | 弾性波デバイスの製造方法 |
WO2010061479A1 (ja) | 2008-11-28 | 2010-06-03 | 富士通株式会社 | 弾性波デバイス、およびその製造方法 |
ES2327890B2 (es) * | 2009-04-06 | 2010-05-18 | Universidad Politecnica De Madrid | Dispositivo de filtrado de ondas acusticas de volumen. |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US8193877B2 (en) | 2009-11-30 | 2012-06-05 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Duplexer with negative phase shifting circuit |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
US12021496B2 (en) * | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
CN111262548B (zh) * | 2019-12-31 | 2021-06-22 | 诺思(天津)微***有限责任公司 | 体声波谐振器组、滤波器、电子设备、机电耦合系数调整方法 |
CN114244300A (zh) * | 2020-09-09 | 2022-03-25 | 诺思(天津)微***有限责任公司 | 滤波器组件及其制造方法、电子设备 |
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-
2001
- 2001-03-05 US US09/799,202 patent/US6787048B2/en not_active Expired - Lifetime
-
2002
- 2002-02-21 DE DE10207330A patent/DE10207330B4/de not_active Expired - Fee Related
- 2002-03-04 JP JP2002057209A patent/JP2002344270A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2002344270A (ja) | 2002-11-29 |
US6787048B2 (en) | 2004-09-07 |
US20020121498A1 (en) | 2002-09-05 |
DE10207330B4 (de) | 2009-05-20 |
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Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
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8127 | New person/name/address of the applicant |
Owner name: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LT |
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Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE |
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Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE., SG Free format text: FORMER OWNER: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD., SINGAPORE, SG Effective date: 20130522 |
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R082 | Change of representative |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE Effective date: 20130522 |
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R081 | Change of applicant/patentee |
Owner name: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LT, SG Free format text: FORMER OWNER: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD., SINGAPORE, SG |
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Representative=s name: DILG, HAEUSLER, SCHINDELMANN PATENTANWALTSGESE, DE Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE |
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