DE10162421A1 - Lichtemittierendes Bauteil sowie zugehöriges Herstellungsverfahren - Google Patents
Lichtemittierendes Bauteil sowie zugehöriges HerstellungsverfahrenInfo
- Publication number
- DE10162421A1 DE10162421A1 DE10162421A DE10162421A DE10162421A1 DE 10162421 A1 DE10162421 A1 DE 10162421A1 DE 10162421 A DE10162421 A DE 10162421A DE 10162421 A DE10162421 A DE 10162421A DE 10162421 A1 DE10162421 A1 DE 10162421A1
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- compound semiconductor
- light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 269
- 239000000758 substrate Substances 0.000 claims abstract description 201
- 150000001875 compounds Chemical class 0.000 claims abstract description 197
- 239000010410 layer Substances 0.000 claims description 654
- 239000000463 material Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 65
- 239000011247 coating layer Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 20
- -1 nitride compound Chemical class 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011149 active material Substances 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 95
- 229910002601 GaN Inorganic materials 0.000 description 94
- 230000008569 process Effects 0.000 description 36
- 150000004767 nitrides Chemical class 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 16
- 238000005538 encapsulation Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- 210000003608 fece Anatomy 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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Abstract
Description
Claims (40)
einer aktiven Schicht (56) zur Lichtemission und
einer ersten und einer zweiten Elektrode (50, 64) auf gegen überliegenden Seiten der aktiven Schicht,
gekennzeichnet durch folgende Schichtaufbaumerkmale:
eine erste Verbindungshalbleiterschicht (58) ist zwischen der aktiven Schicht (56) und der zweiten Elektrode (64) ge bildet,
eine zweite Verbindungshalbleiterschicht (54) ist gegen überliegend zur ersten Verbindungshalbleiterschicht zwi schen der aktiven Schicht und der ersten Elektrode (50) ge bildet, und
ein hoch widerstandsfähiges Substrat (60) ist an der Unter seite der ersten Verbindungshalbleiterschicht gebildet, wo bei ein Teil des Substrats entfernt ist, um einen elektrischen Kontakt zwischen der ersten Verbindungshalbleiterschicht und der zweiten Elektrode (64) zu realisieren.
einem hoch widerstandsfähigen Substrat (150),
einer ersten und zweiten Elektrode, die sich auf gegenüber liegenden Seiten des hoch widerstandsfähigen Substrats befinden, und
einer laseraktiven Materialschicht zwischen dem hoch wi derstandsfähigen Substrat und der ersten Elektrode,
dadurch gekennzeichnet, dass
das hoch widerstandsfähige Substrat in einem Teilbereich entfernt ist, durch den hindurch die zweite Elektrode die la seraktive Materialschicht kontaktiert.
- - eine Resonatorschicht (160),
- - eine erste und eine zweite Überzugsschicht (158, 162) auf gegenüberliegenden Seiten der Resonatorschicht,
- - eine erste und eine zweite Verbindungshalbleiterschicht (152, 164) auf den voneinander abgewandten Seiten der ersten bzw. zweiten Überzugsschicht und
- - eine Passivierungsschicht (166), die zwischen der zweiten Überzugsschicht und der zweiten Elektrode (168) in Kontakt mit einem Bereich der zweiten Verbindungshalbleiterschicht in einer symmetrischen Weise gebildet ist,
- - wobei die Unterseite der ersten Verbindungshalbleiter schicht die erste Elektrode durch den entfernten Bereich des hoch widerstandsfähigen Substrats hindurch kontaktiert.
- - eine laseraktive Schicht (160b),
- - eine erste Wellenleitungsschicht (160a) zwischen der laser aktiven Schicht und der ersten Überzugsschicht und
- - eine zweite Wellenleitungsschicht (160c) zwischen der la seraktiven Schicht und der zweiten Überzugsschicht.
einer aktiven Schicht zur Lichtemission und
einer ersten und einer zweiten Materialschicht auf gegenü berliegenden Seiten der aktiven Schicht zur Induktion von Laseremission in der aktiven Schicht,
gekennzeichnet durch folgende Schichtaufbaumerkmale:
eine erste Elektrode ist in Kontakt mit der untersten Lage der ersten Materialschicht gebildet,
eine zweite Elektrode ist in Kontakt mit der obersten Lage der zweiten Materialschicht in einer beschränkten Weise gebildet, und
ein Wärmeableitungselement ist in Kontakt mit der untersten Lage der ersten Materialschicht zur effektiven Wärmeabfüh rung angeordnet.
- a) sequentielles Bilden einer ersten Verbindunghalblei terschicht, einer aktiven Schicht und einer zweiten Verbindungshalbleiterschicht zur Induktion einer Lichtemission auf einem hoch widerstandsfähigen Substrat,
- b) Bilden einer lichttransmittierenden, leitfähigen Schicht auf der zweiten Verbindungshalbleiterschicht,
- c) Ätzen eines Bereichs des hoch widerstandsfähigen Substrats zur Freilegung der ersten Verbindungshalb leiterschicht und
- d) Bilden einer hoch abschirmenden, leitfähigen Schicht, welche den freigelegten Bereich der ersten Verbin dungshalbleiterschicht bedeckt.
- a) sequentielles Bilden einer ersten Verbindunghalblei terschicht, einer aktiven Schicht und einer zweiten Verbindungshalbleiterschicht zur Induktion einer Lichtemission auf einem hoch widerstandsfähigen Substrat,
- b) Bilden einer lichtreflektierenden, leitfähigen Schicht auf der zweiten Verbindungshalbleiterschicht,
- c) Ätzen eines Bereichs des hoch widerstandsfähigen Substrats zur Freilegung der ersten Verbindungshalb leiterschicht und
- d) Bilden einer lichttransmittierenden, leitfähigen Schicht, welche den freigelegten Bereich der ersten Verbin dungshalbleiterschicht bedeckt.
- a) Bilden einer Materialschicht für Laseraktivität auf ei nem hoch widerstandsfähigen Substrat,
- b) Bilden einer ersten Elektrode auf der Materialschicht,
- c) Ätzen eines Bereichs des hoch widerstandsfähigen Substrats zur Freilegung eines Bereichs der Material schicht und
- d) Bilden einer zweiten Elektrode an der Unterseite des hoch widerstandsfähigen Substrats, welche den frei gelegten Bereich der Materialschicht ganz oder teil weise bedeckt.
- - sequentielles Aufbringen einer ersten Verbindungshalblei terschicht, einer ersten Überzugsschicht, einer Resonator schicht, einer zweiten Überzugsschicht und einer zweiten Verbindungshalbleiterschicht auf das hoch widerstandsfähi ge Substrat,
- - Erzeugen einer Maskenstruktur auf der zweiten Verbin dungshalbleiterschicht, welche diese in einem vorgebbaren Bereich bedeckt,
- - sequentielles Strukturieren der zweiten Verbindungshalblei terschicht und der zweiten Überzugsschicht unter Verwen dung der Maskenstruktur als Ätzmaske, wobei die zweite Überzugsschicht eine fixierte Form annimmt,
- - Entfernen der Maskenstruktur und
- - Bilden einer Passivierungsschicht auf der in die fixierte Form strukturierten, zweiten Überzugsschicht in Kontakt mit einem Bereich der strukturierten zweiten Verbindungshalb leiterschicht.
- - Bilden einer ohmschen Kontaktschicht an der Unterseite des hoch widerstandsfähigen Substrates, welche den freige legten Bereich der Materialschicht ganz oder teilweise be deckt, und
- - Bilden einer Wärmeleitungsschicht auf der ohmschen Kon taktschicht.
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KR10-2000-0077746A KR100413808B1 (ko) | 2000-12-18 | 2000-12-18 | GaN계열 Ⅲ-Ⅴ족 질화물 반도체 발광 소자 및 그 제조방법 |
KR10-2001-0004035A KR100397608B1 (ko) | 2001-01-29 | 2001-01-29 | GaN계열 Ⅲ-Ⅴ족 질화물 반도체 레이저 다이오드 |
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DE10162421A Withdrawn DE10162421A1 (de) | 2000-12-18 | 2001-12-18 | Lichtemittierendes Bauteil sowie zugehöriges Herstellungsverfahren |
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JP (1) | JP3859505B2 (de) |
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JP2000261088A (ja) | 1999-03-05 | 2000-09-22 | Hitachi Ltd | 発光素子 |
JP2000312049A (ja) | 1999-04-27 | 2000-11-07 | Fuji Photo Film Co Ltd | 半導体光機能装置 |
US20020017653A1 (en) | 1999-08-26 | 2002-02-14 | Feng-Ju Chuang | Blue light emitting diode with sapphire substrate and method for making the same |
JP2001094148A (ja) | 1999-09-17 | 2001-04-06 | Korai Kagi Kofun Yugenkoshi | サファイア基板青色光ledとその製造方法 |
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US6429460B1 (en) * | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
JP2002170989A (ja) * | 2000-12-04 | 2002-06-14 | Sharp Corp | 窒化物系化合物半導体発光素子 |
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JP2005211206A (ja) * | 2004-01-28 | 2005-08-11 | Brother Ind Ltd | 刺繍データ作成装置及び刺繍データ作成プログラム |
-
2001
- 2001-12-12 US US10/012,309 patent/US6657237B2/en not_active Expired - Lifetime
- 2001-12-17 GB GB0130203A patent/GB2374459B/en not_active Expired - Fee Related
- 2001-12-17 GB GB0510128A patent/GB2411522B/en not_active Expired - Fee Related
- 2001-12-17 JP JP2001383523A patent/JP3859505B2/ja not_active Expired - Fee Related
- 2001-12-18 CN CNB011433043A patent/CN100452447C/zh not_active Expired - Fee Related
- 2001-12-18 DE DE10162421A patent/DE10162421A1/de not_active Withdrawn
-
2003
- 2003-09-30 US US10/673,251 patent/US7566578B2/en not_active Expired - Fee Related
-
2009
- 2009-06-30 US US12/495,000 patent/US8324004B2/en not_active Expired - Fee Related
-
2012
- 2012-11-12 US US13/674,568 patent/US20130087764A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017117136B4 (de) | 2017-07-28 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode |
US11688993B2 (en) | 2017-07-28 | 2023-06-27 | Osram Opto Semiconductors Gmbh | Method of producing a plurality of laser diodes and laser diode |
Also Published As
Publication number | Publication date |
---|---|
GB0510128D0 (en) | 2005-06-22 |
US7566578B2 (en) | 2009-07-28 |
GB2411522B (en) | 2005-11-02 |
CN1367540A (zh) | 2002-09-04 |
JP3859505B2 (ja) | 2006-12-20 |
GB2374459B (en) | 2005-09-14 |
US8324004B2 (en) | 2012-12-04 |
US20040063236A1 (en) | 2004-04-01 |
US6657237B2 (en) | 2003-12-02 |
GB2374459A (en) | 2002-10-16 |
US20130087764A1 (en) | 2013-04-11 |
GB2411522A (en) | 2005-08-31 |
US20090325334A1 (en) | 2009-12-31 |
CN100452447C (zh) | 2009-01-14 |
GB0130203D0 (en) | 2002-02-06 |
JP2002232003A (ja) | 2002-08-16 |
US20020074556A1 (en) | 2002-06-20 |
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