JP4890813B2 - 発光ダイオード及び発光ダイオードランプ - Google Patents
発光ダイオード及び発光ダイオードランプ Download PDFInfo
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- JP4890813B2 JP4890813B2 JP2005227622A JP2005227622A JP4890813B2 JP 4890813 B2 JP4890813 B2 JP 4890813B2 JP 2005227622 A JP2005227622 A JP 2005227622A JP 2005227622 A JP2005227622 A JP 2005227622A JP 4890813 B2 JP4890813 B2 JP 4890813B2
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- 239000013078 crystal Substances 0.000 claims description 159
- 229910052710 silicon Inorganic materials 0.000 claims description 148
- 239000010703 silicon Substances 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 148
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 146
- 239000004065 semiconductor Substances 0.000 claims description 109
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 239000007769 metal material Substances 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 67
- 230000002441 reversible effect Effects 0.000 description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 239000010409 thin film Substances 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000858 La alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 boron phosphide compound Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
1B 光反射用穴
1C 上層(第1または第2の伝導形の半導体層)
1D 金属膜
10 LED(チップ)
20 LED(チップ)
30 第2のpn接合構造部
31 第2のpn接合構造部
40 発光部
41 発光部
50 LEDランプ
100 積層構造体
101 第1の伝導形の珪素単結晶基板
102 p形SiC薄膜層
103 n形GaN層
104 発光層
105 上部クラッド層
106 コンタクト層
107a 台座電極
107b 第1の極性のオーミック電極
108 第2の極性のオーミック電極(台座電極)
109 光反射用穴
109a 光反射用穴の閉塞上壁
109b 光反射用穴の側壁
110 金属膜
111 銀系ペースト剤
200 積層構造体
201 第1の伝導形の珪素単結晶基板
202 n形AlN薄膜層
203 n形立方晶GaN層
204 発光層
205 p形上部クラッド層
206 コンタクト層
207a 台座電極
207b 第1の極性のオーミック電極
208 第2の極性のオーミック電極(台座電極)
209 光反射用穴
209a 光反射用穴の閉塞上壁
209b 光反射用穴の側壁
210 金属膜
211 銀系ペースト剤
501 支持器
501a 支持器の上面部
502 結線用電極端子
503 金線
504 結線用電極端子
505 金線
506 エポキシ樹脂
Claims (10)
- 第1の伝導形の珪素単結晶基板と、その珪素単結晶基板上のIII族窒化物半導体から構成された第1のpn接合構造部を含む発光部と、その発光部上に設けられた第1の伝導形の半導体層上に形成された第1の極性のオーミック電極と、珪素単結晶基板に関して発光部と同一側の、第2の伝導形の半導体層上に形成された第2の極性のオーミック電極と、が備えられている発光ダイオードにおいて、
上記第1の伝導形の珪素単結晶基板から発光部に渡る領域に第2のpn接合構造部を構成するとともに、その珪素単結晶基板の発光部が設けられている側とは反対側の基板裏面から積層方向に向けて珪素単結晶基板に光反射用穴を設け、その光反射用穴の内周面および珪素単結晶基板の基板裏面を金属膜で被覆し、
上記光反射用穴は珪素単結晶基板の基板裏面から、第2のpn接合構造部に向けて貫通する貫通孔であり、その貫通孔に臨む第2のpn接合構造部下面が光反射用穴の内周面の一部をなしている、
ことを特徴とする発光ダイオード。 - 上記第2のpn接合構造部は、第1の伝導形の珪素単結晶基板と、その珪素単結晶基板の表面に接合させて設けた、発光部からの発光を透過できる半導体材料から構成した第2の伝導形の半導体層とから形成される、請求項1に記載の発光ダイオード。
- 上記第2のpn接合構造部は、第1の伝導形の珪素単結晶基板の表面上に設けた、発光部からの発光を透過できる第1の伝導形の半導体材料からなる第1の伝導形の半導体層と、第1の伝導形の半導体層に接合させて設けた、発光部からの発光を透過できる第2の伝導形の半導体材料からなる第2の伝導形の半導体層とから形成される、請求項1に記載の発光ダイオード。
- 上記珪素単結晶基板の基板裏面を被覆する金属膜は、珪素単結晶基板についてオーミック接触性を呈する金属材料からなる、請求項1から3の何れか1項に記載の発光ダイオード。
- 上記光反射用穴の内周面を被覆する金属膜は、珪素単結晶基板についてオーミック接触性を呈する金属材料からなる、請求項4に記載の発光ダイオード。
- 上記光反射用穴の内周面を被覆する金属膜と、珪素単結晶基板の基板裏面を被覆する金属膜とは、異なる金属材料からなる、請求項1から4の何れか1項に記載の発光ダイオード。
- 上記光反射用穴の内周面を被覆する金属膜は、珪素単結晶基板の基板裏面を被覆する金属膜に比べて、発光部から出射される光について、より反射率の高い金属材料からなる、請求項6に記載の発光ダイオード。
- 請求項1から7の何れか1項に記載の発光ダイオードを用いて構成されている、ことを特徴とする発光ダイオードランプ。
- 上記第1の極性のオーミック電極と、金属膜のうちの少なくとも珪素単結晶基板の基板裏面の金属膜とが等電位に接続されている、請求項8に記載の発光ダイオードランプ。
- 上記第1の極性のオーミック電極と、金属膜と、発光ダイオードを固定するとともに金属膜と電気的に接触する支持器とが、等電位となるように接続されている、請求項8または9に記載の発光ダイオードランプ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005227622A JP4890813B2 (ja) | 2005-08-05 | 2005-08-05 | 発光ダイオード及び発光ダイオードランプ |
KR1020087005149A KR100984750B1 (ko) | 2005-08-05 | 2006-08-03 | 발광 다이오드 및 발광 다이오드 램프 |
US11/997,942 US8071991B2 (en) | 2005-08-05 | 2006-08-03 | Light-emitting diode and light-emitting diode lamp |
PCT/JP2006/315778 WO2007018250A1 (ja) | 2005-08-05 | 2006-08-03 | 発光ダイオード及び発光ダイオードランプ |
TW095128570A TWI322513B (en) | 2005-08-05 | 2006-08-04 | Light-emitting diode and light-emitting diode lamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005227622A JP4890813B2 (ja) | 2005-08-05 | 2005-08-05 | 発光ダイオード及び発光ダイオードランプ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007042976A JP2007042976A (ja) | 2007-02-15 |
JP4890813B2 true JP4890813B2 (ja) | 2012-03-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005227622A Active JP4890813B2 (ja) | 2005-08-05 | 2005-08-05 | 発光ダイオード及び発光ダイオードランプ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8071991B2 (ja) |
JP (1) | JP4890813B2 (ja) |
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JP4766966B2 (ja) * | 2005-09-07 | 2011-09-07 | 京セラ株式会社 | 発光素子 |
JP2009049371A (ja) * | 2007-07-26 | 2009-03-05 | Sharp Corp | 窒化物系化合物半導体発光素子およびその製造方法 |
US8884321B2 (en) | 2008-04-06 | 2014-11-11 | Lg Innotek Co., Ltd. | Luminous element |
KR101916144B1 (ko) | 2012-05-16 | 2018-11-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
JP2015056648A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体発光素子およびそれを用いた発光装置 |
JP6553336B2 (ja) * | 2014-07-28 | 2019-07-31 | エア・ウォーター株式会社 | 半導体装置 |
JP6661330B2 (ja) * | 2015-10-27 | 2020-03-11 | 株式会社ディスコ | Led基板の形成方法 |
US10054849B2 (en) * | 2016-05-17 | 2018-08-21 | Seiko Epson Corporation | Light source device and projector |
JP6822452B2 (ja) * | 2018-08-23 | 2021-01-27 | セイコーエプソン株式会社 | 光源装置およびプロジェクター |
CN115295705A (zh) * | 2022-07-07 | 2022-11-04 | 厦门市三安光电科技有限公司 | 一种发光二极管、发光装置及其车灯 |
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DE1789021C3 (de) * | 1967-09-25 | 1975-04-10 | Hitachi, Ltd., Tokio | Zenerdiode und Verfahren zu ihrer Herstellung |
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JPH0936427A (ja) * | 1995-07-18 | 1997-02-07 | Showa Denko Kk | 半導体装置及びその製造方法 |
JP3787202B2 (ja) | 1997-01-10 | 2006-06-21 | ローム株式会社 | 半導体発光素子 |
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JP2000188425A (ja) | 1998-12-22 | 2000-07-04 | Nichia Chem Ind Ltd | 発光ダイオード |
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TW545698U (en) * | 2001-12-28 | 2003-08-01 | United Epitaxy Co Ltd | LED packaging structure with a static charge protecting device |
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JP3639276B2 (ja) * | 2002-10-31 | 2005-04-20 | 昭和電工株式会社 | p形リン化硼素半導体層の製造方法、化合物半導体素子、ツェナーダイオード、及び発光ダイオード |
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TWI223900B (en) | 2003-07-31 | 2004-11-11 | United Epitaxy Co Ltd | ESD protection configuration and method for light emitting diodes |
JP4063801B2 (ja) * | 2003-08-08 | 2008-03-19 | 昭和電工株式会社 | 発光ダイオード |
JP2005150393A (ja) * | 2003-11-14 | 2005-06-09 | Sharp Corp | 受発光素子用サブマウント |
JP4747516B2 (ja) * | 2004-06-08 | 2011-08-17 | 富士ゼロックス株式会社 | 垂直共振器型面発光半導体レーザ装置 |
JP4626258B2 (ja) | 2004-10-18 | 2011-02-02 | 日亜化学工業株式会社 | 発光ダイオード |
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KR20080035670A (ko) | 2008-04-23 |
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US8071991B2 (en) | 2011-12-06 |
WO2007018250A1 (ja) | 2007-02-15 |
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KR100984750B1 (ko) | 2010-10-01 |
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